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1. 发明公开

EP2980271A1 DELIVERY DEVICE FOR THIN FILM DEPOSITION 有权
标题翻译： FREISETZUNGSVORRICHTUNGFÜRDÜNNSCHICHTABSCHEIDUNG
公开(公告)号：EP2980271A1
公开(公告)日：2016-02-03
申请号：EP15183410.8
申请日：2007-12-26
申请人： Eastman Kodak Company
发明人： NELSON, Shelby Forrester , LEVY, David Howard , KERR, Roger Stanley
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： The invention relates to a delivery device for thin-film material deposition onto a substrate comprising a plurality of inlet ports, at least one exhaust port, at least three groups of elongated emissive channels, and a gas diffuser.
摘要翻译：本发明涉及用于薄膜材料沉积到基底上的输送装置，包括多个入口端口，至少一个排气口，至少三组细长的发射通道和气体扩散器。

2. 发明公开

EP2743372A1 Delivery device for thin film deposition 审中-公开
标题翻译：用于薄膜沉积的剥离装置
公开(公告)号：EP2743372A1
公开(公告)日：2014-06-18
申请号：EP14150790.5
申请日：2007-12-26
申请人： Eastman Kodak Company
发明人： Nelson, Shelby Forrester , Levy, David Howard , Kerr, Roger Stanley
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

3. 发明公开

EP1193324A2 A method of producing high aspect ratio domes by vapor deposition 有权
标题翻译：通过气相沉积的装置，用于生产具有高的纵横比的耦合的方法
公开(公告)号：EP1193324A2
公开(公告)日：2002-04-03
申请号：EP01306564.4
申请日：2001-07-31
申请人： Shipley Company LLC
发明人： Goela, Jitendra S. , Salihbegovic, Zlatko
IPC分类号： C23C16/00
CPC分类号： C23C16/45559 , C23C16/01 , C23C16/458
摘要： An apparatus and method for preparing high aspect ratio domes employed to enhance aerodynamic performance in missiles and aircraft. The apparatus and method of the present invention also provide transmissive domes for infrared sensors used for navigation, targeting and guidance systems. The apparatus is employed in chemical vapor deposition furnaces for chemical deposition of materials on mandrels to form domes. The mandrels of the apparatus are arranged in the deposition chamber such that the flow of gaseous reactants does not impinge on the mandrels. The reactants diffuse onto the mandrels to form domes with high aspect ratios.
摘要翻译：用于制备用于增强在导弹和飞机的空气动力性能的高纵横比的圆顶的装置和方法。本发明的装置和方法因此为用于导航红外传感器，定位和引导系统提供透射圆顶。该装置被用在化学气相沉积炉材料的化学沉积在心轴上，以形成圆顶。该设备的心轴布置在沉积室调查没有气态反应物的流不会芯轴扑来。反应物扩散走上心轴，以形成具有高纵横比圆顶。

4. 发明授权

EP0437355B1 Process and apparatus for preparing a thin film electroluminescent device 失效
标题翻译：用于制造薄膜电致发光器件美分的方法和装置
公开(公告)号：EP0437355B1
公开(公告)日：1996-06-05
申请号：EP91300159.0
申请日：1991-01-09
申请人： SHARP KABUSHIKI KAISHA
发明人： Tanaka, Koichi , Mikami, Akiyoshi , Taniguchi, Kouji , Okibayashi, Katsushi , Terada, Kousuke , Yamashita, Takuo , Ogura, Takashi , Nakaya, Hiroaki , Yoshida, Masaru , Nakajima, Shigeo
IPC分类号： C23C16/30 , C23C16/44 , H01L33/00 , C09K11/08
CPC分类号： C23C16/45502 , C23C16/306 , C23C16/45512 , C23C16/45559 , C23C16/45582 , C23C16/458

5. 发明授权

EP0161101B1 Chemical vapor deposition wafer boat 有权转让
标题翻译：化学蒸气沉积船
公开(公告)号：EP0161101B1
公开(公告)日：1989-08-09
申请号：EP85303099.7
申请日：1985-05-01
申请人： ANICON, INC.
发明人： Learn, Arthur J. , Debois, Dale R.
IPC分类号： C23C16/44
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591

6. 发明公开

EP0161101A3 Chemical vapor deposition wafer boat 有权转让
标题翻译：化学气相沉积晶圆舟
公开(公告)号：EP0161101A3
公开(公告)日：1987-07-15
申请号：EP85303099
申请日：1985-05-01
申请人： ANICON, INC.
发明人： Learn, Arthur J. , Debois, Dale R.
IPC分类号： C23C16/44
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591
摘要： A chemical vapor deposition wafer boat (2) for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders (4,6). The upper hemicylinder (4) has diffusion zones with gas flow passageways (22,23,24) therein in the ends (8,10) and zones (C,A) within from 0 to 75 and within from 0 to 15° from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends-and sidewall of the lower hemicylinder (6) comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80% of the surface area of the respective gas diffusion zones.
摘要翻译：用于以垂直于船的轴线的均匀隔开的直立方向支撑多个晶片的化学气相沉积晶片舟（2）包括具有封闭端并且由相互啮合的上半圆柱和下半圆柱（4,6）组成的圆柱体。上半圆柱体（4）在其端部（8,10）中具有气体流动通道（22,23,24）的扩散区域，并且在0至75之间的区域（C，A）中具有气体流动通道通过气缸轴线的垂直平面。半圆柱壁的其余部分和端部是没有气流通道的挡板区域。下半圆柱体（6）的端部和侧壁包括气体扩散区。气流通道占各个气体扩散区的表面积的0.5至80％。

7. 发明公开

EP3214205A4 APPARATUS FOR INJECTING GAS INTO FILM FORMATION APPARATUS 有权
公开(公告)号：EP3214205A4
公开(公告)日：2018-05-30
申请号：EP14905132
申请日：2014-10-29
申请人： TOSHIBA MITSUBISHI ELECTRIC IND SYSTEMS CORPORATION
发明人： TABATA YOICHIRO , WATANABE KENSUKE , NISHIMURA SHINICHI
IPC分类号： C23C16/455 , B01J4/00 , C23C16/04 , C23C16/452 , C23C16/503 , C23C16/513 , H01L21/31 , H05H1/24
CPC分类号： C23C16/45561 , B01J4/00 , C23C16/045 , C23C16/452 , C23C16/455 , C23C16/4551 , C23C16/45559 , C23C16/45563 , C23C16/4557 , C23C16/45572 , C23C16/45582 , C23C16/503 , C23C16/513 , H01L21/31 , H05H1/24
摘要： The present invention provides a gas jetting apparatus for a film formation apparatus. The gas jetting apparatus is capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (23) for rectifying a gas and jetting the rectified gas into the film formation apparatus (200). The gas jetting cell unit (23) has a fan shape internally formed with a gap (d0) serving as a gas route. A gas in a gas dispersion supply unit (99) enters from a wider-width side of the fan shape into the gap (d0), and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus (200).

8. 发明授权

EP2294599B1 PLASMASTEMPEL, PLASMABEHANDLUNGSVORRICHTUNG, VERFAHREN ZUR PLASMABEHANDLUNG UND HERSTELLUNGSVERFAHREN FÜR EINEN PLASMASTEMPEL 有权
标题翻译： PLASMA STAMP，等离子治疗仪，等离子处理方法和手段等离子TEMPLE
公开(公告)号：EP2294599B1
公开(公告)日：2014-09-03
申请号：EP09749633.5
申请日：2009-05-20
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： KLAGES, Claus-Peter , THOMAS, Michael
IPC分类号： H01J37/32 , C23C14/04 , B05D7/24 , B29C59/14
CPC分类号： H01J37/32532 , B05D3/141 , B29C59/14 , C23C16/402 , C23C16/45559 , C23C16/45568 , C23C16/505 , H01J37/32009 , H01J37/32366 , Y10T29/49 , Y10T137/8593

9. 发明公开

EP0645472A1 Coated article for hot hydrocarbon fluid and method of preventing fuel thermal degradation deposits 失效
标题翻译：的涂覆制品，用于热烃流体和方法，用于通过这些液体的热分解预防沉积物。
公开(公告)号：EP0645472A1
公开(公告)日：1995-03-29
申请号：EP94306283.6
申请日：1994-08-25
申请人： GENERAL ELECTRIC COMPANY
发明人： Coffinbery, George Albert
IPC分类号： C23C16/40 , C23C16/06
CPC分类号： C23C16/45559 , B01J19/02 , B01J37/0238 , B01J2219/024 , C23C16/405 , F01D5/288 , F01D25/007 , F02C7/224 , F02C7/30 , Y02T50/67 , Y02T50/672
摘要： Articles for hot hydrocarbon fluid wherein the surface for contacting the fluid is a diffusion barrier material or a catalytic material coated on a metal substrate. The material is either catalytically-inactive tantalum oxide which inhibits the formation of coke in the fluid or catalytically-active zirconium oxide which promotes the formation of a loosely adherent coke in the fluid while inhibiting the formation of gum in the fluid. The coating materials, i.e., the diffusion barrier coating material and the catalytic coating material, are deposited by chemical vapor deposition (CVD), e.g., by effusive chemical vapor deposition of an organometallic compound on the surface without the use of carrier gas, without pre-oxidation of the surface and without thermal decomposition of the diffusion barrier material or the catalytic coating material. The articles having the coated surfaces find utility in components subjected to high temperatures wherein the components are in contact with hydrocarbon fluids without additives, without special attention to quality control and without the need for special processing.
摘要翻译：制品用于热烃流体worin用于接触流体表面是扩散阻挡材料或涂敷在金属基底上的催化材料。该材料是催化失活的氧化钽哪抑制焦炭在流体或催化活性的氧化锆促进一个松散粘连焦炭的形成在流体抑制而胶的在流体中形成的形成。的涂料，即，扩散阻挡涂层材料和催化涂层材料，通过化学气相沉积（CVD），例如，通过喷溢化学气相沉积在有机金属化合物的表面上沉积，而不会在不使用载气预表面和没有扩散阻挡材料的热分解或催化涂层材料氧化。具有涂覆表面发现经受高温worin组分处于与烃流体接触，而没有添加剂组分效用，无需特别注意的质量控制而无需进行特殊加工的制品。

10. 发明公开

EP0167374A3 Chemical vapor deposition wafer boat 失效
标题翻译：化学蒸气沉积船
公开(公告)号：EP0167374A3
公开(公告)日：1987-07-29
申请号：EP85304671
申请日：1985-07-01
申请人： ANICON, INC.
发明人： Foster, Derrick Wayne , Herring, Robert Bruce
IPC分类号： C23C16/44
CPC分类号： C23C16/45559 , C23C16/455 , C23C16/45591 , C23C16/4587
摘要： A chemical vapor deposition wafer boat (2) for polysilicon deposition in a vertical CVD apparatus comprises upper and lower, mutually engaging, open ended hemicylinders (4,6). Gas flow passageways (16) are present in a diffusion zone (A) of the lower hemicylinder wall, but not in the remainder of the walls of the hemicylinder. Gas flow to the wafers is limited to diffusion flow, and the wafers are protected from particulates forming in the gas stream during the coating operation.

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