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1. 发明公开

EP3214202A1 FILM FORMING METHOD AND PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS 无效
标题翻译：成膜方法和等离子体化学气相沉积设备
公开(公告)号：EP3214202A1
公开(公告)日：2017-09-06
申请号：EP17158752.0
申请日：2017-03-01
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： TACHIBANA, Kazutaka , SATO, Takayasu , SATO, Yoji , NAKATA, Hiromichi , MANABE, Kazuyoshi , OKAMURA, Seiji , YAMAMOTO, Izuru
IPC分类号： C23C16/26 , C23C16/511 , C23C28/04
CPC分类号： C23C16/26 , C23C16/511 , C23C16/52 , H05H1/46 , H05H2001/4622
摘要： A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from "0", the intensity (SMW) of the microwaves output from the high-frequency output device when step-up of a bias current (BA) of the workpiece occurs is referred to as a first intensity (SMW1), and in a process of gradually increasing the intensity (SMW) of the microwaves from the first intensity (SMW1), the intensity (SMW) of the microwaves when step-up of the bias current (BA) occurs again is referred to as a second intensity (SMW2). During film formation, the microwaves having an intensity (SMW) of higher than the first intensity (SMW1) and lower than the second intensity (SMW2) are output from the high-frequency output device.
摘要翻译：一种PCVD设备包括波导部件，该波导部件利用位于反应器中的波导部件的一部分来支撑工件，并且使从高频输出装置输出的微波传播到工件。在通过波导构件向工件传播的微波的强度从“0”逐渐增加的过程中，当偏置电流（BA）升高时，从高频输出装置输出的微波的强度（SMW））称为第一强度（SMW1），并且在从第一强度（SMW1）逐渐增加微波的强度（SMW）的过程中，当步进式加热时，微波的强度（SMW）再次发生偏置电流（BA）的上升称为第二强度（SMW2）。在成膜过程中，从高频输出装置输出强度（SMW）高于第一强度（SMW1）且低于第二强度（SMW2）的微波。

2. 发明授权

EP3109891B1 PLASMA CHEMICAL VAPOR DEPOSITION DEVICE 失效
标题翻译：等离子体化学气相沉积装置
公开(公告)号：EP3109891B1
公开(公告)日：2018-05-09
申请号：EP16176269.5
申请日：2016-06-24
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SATO, Yoji , SATO, Takayasu , NAKATA, Hiromichi , TACHIBANA, Kazutaka , ARIYADA, Osamu , TAKANO, Yuji , TSURUMOTO, Ryo
IPC分类号： H01J37/32
CPC分类号： C23C16/513 , C23C16/455 , H01J37/32211 , H01J37/32311 , H01J37/32577
摘要： A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).

3. 发明公开

EP3109891A1 PLASMA CHEMICAL VAPOR DEPOSITION DEVICE 失效
标题翻译： PLASMA-CVD-VORRICHTUNG
公开(公告)号：EP3109891A1
公开(公告)日：2016-12-28
申请号：EP16176269.5
申请日：2016-06-24
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SATO, Yoji , SATO, Takayasu , NAKATA, Hiromichi , TACHIBANA, Kazutaka , ARIYADA, Osamu , TAKANO, Yuji , TSURUMOTO, Ryo
IPC分类号： H01J37/32
CPC分类号： C23C16/513 , C23C16/455 , H01J37/32211 , H01J37/32311 , H01J37/32577
摘要： A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).
摘要翻译：等离子体化学气相沉积装置包括腔室（12），具有细长形状的第一导体（20），具有管状形状的第二导体（30），高频输出装置（45）和直流电源（46）。具有高频输出装置（45）的第一导体（20）的第一连接部分（23）和具有直流电源（46）的第一导体（20）的第二连接部分（24）两者都放置在室（12）的外部。从第一导体（20）的一端到第一连接部（23）的距离比从第一导体（20）的一端到第二连接部（24）的距离短。阻抗变化部分（25）设置在第一导体（20）中的第一连接部分（23）和第二连接部分（24）之间，阻抗变化部分的阻抗不同于第一导体（20）和第一连接部分（23）。

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