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1. 发明公开

EP2582324A2 ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS 有权
标题翻译：用于视网膜假体的超高感光度垂直纳米线阵列
公开(公告)号：EP2582324A2
公开(公告)日：2013-04-24
申请号：EP11798773.5
申请日：2011-06-21
申请人： The Regents of The University of California
发明人： KHRAICHE, Massoud L. , SILVA, Gabriel A. , CAUWENBERGHS, Gert , LO, Yu-Hwa , WANG, Deli , FREEMAN, William
IPC分类号： A61F2/14 , A61F9/00 , A61N1/02 , A61L27/14
CPC分类号： A61N1/36046 , A61F2/14 , A61L27/18 , A61L2400/12 , A61L2430/16 , A61N1/0543 , H01L31/035227 , H01L31/035236 , C08L83/04 , C08L65/04
摘要： A prosthetic retina for implantation in an eye having a defective retina is formed from an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in close proximity to the retina. An electrical conductor is formed at a first end of all nanowires in the array of nanowires and placed in contact with a bias source which biases the array. A plurality of electrodes is located on a second end of each of one nanowire or a bundle of nanowires in the array. Each nanowire produces a photocurrent at a corresponding electrode in response to detection of light impinging on the array of nanowires and the photocurrent stimulates one or more neurons adapted for visual perception. In the preferred embodiment, the predetermined spatial distribution mimics a distribution of rods and cones in a normal eye.
摘要翻译：用于植入具有缺陷视网膜的眼睛中的假体视网膜由具有预定空间分布，密度，尺寸和形状的纳米线阵列形成，所述纳米线非常靠近视网膜植入。电导体形成在纳米线阵列中的所有纳米线的第一端处并且与偏置阵列的偏置源接触。多个电极位于阵列中的一个纳米线或纳米线束中的每一个的第二端上。响应于检测到撞击在纳米线阵列上的光，每个纳米线在相应的电极处产生光电流，并且光电流刺激适于视觉感知的一个或多个神经元。在优选实施例中，预定空间分布模拟正常眼睛中的杆和锥体的分布。

2. 发明公开

EP2371181A2 ELECTRON INJECTION NANOSTRUCTURED SEMICONDUCTOR MATERIAL ANODE ELECTROLUMINESCENCE METHOD AND DEVICE 审中-公开
标题翻译：电致发光和device纳米结构的电子注入半导体材料阳极
公开(公告)号：EP2371181A2
公开(公告)日：2011-10-05
申请号：EP09831195.4
申请日：2009-12-04
申请人： The Regents Of The University Of California
发明人： WANG, Deli
IPC分类号： H05B33/00
CPC分类号： H01J63/06 , H01L33/502
摘要： Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons. External electrode contacts permit application of a voltage differential across the anode and cathode to stimulate electron emissions from the cathode and resultant photon emissions from the semiconductor light emitting nanostructures of the anode. Embodiments of the invention also include the usage of nanostructured semiconductor materials as phosphors for conventional planar LED and nanowire array light emitting diodes and CFL. For the use in conventional planar LEDs, the nanostructures may take the form of quantum dots, nanotubes, branched tree-like nanostructure, nanoflower, tetrapods, tripods, axial heterostructures nanowires hetero structures.

3. 发明授权

EP2582324B1 ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS 有权
公开(公告)号：EP2582324B1
公开(公告)日：2020-03-18
申请号：EP11798773.5
申请日：2011-06-21
申请人： The Regents of the University of California
发明人： KHRAICHE, Massoud L. , SILVA, Gabriel A. , CAUWENBERGHS, Gert , LO, Yu-Hwa , WANG, Deli , FREEMAN, William
IPC分类号： A61N1/02 , A61F9/00 , A61L27/14 , A61F2/14

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