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1. 发明授权

EP0933802B1 PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICE 失效
标题翻译：法半导体器件
公开(公告)号：EP0933802B1
公开(公告)日：2002-04-17
申请号：EP97911513.6
申请日：1997-11-11
申请人： TOKYO ELECTRON LIMITED
发明人： AKAHORI, Takashi , ISHIZUKA, Shuichi, 202, Shiroyama New Heights , ENDO, Shunichi , AOKI, Takeshi , HIRATA, Tadashi, 1004, Dragon Mansion
IPC分类号： H01L21/3065 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/31138 , H01L21/76802 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A process for the production of a semiconductor device, which enables the practical use of a carbon fluoride film (hereinafter referred to as "CF film") as the interlayer insulator film. The deposition of a conductive film such as a TiN film (41) on a CF film (4) and the patternwise deposition of a resist film (42) on the film (41) are conducted successively, followed by the etching of the TiN film (41) with BCl3 gas or the like. Although the subsequent irradiation of the resulting wafer with O2 plasma makes not only the CF film but also the resist film (42) etched chemically, predetermined holes can be formed by virtue of the action of the TiN film (41) as a mask. Then, wiring is formed of aluminum or the like on the surface of the CF film (4). The TiN film (41) is effective in making the wiring and the CF film (4) adhere tightly to each other and serves as a part of the wiring. An insulator film made of SiO2 or the like may be used as the mask instead of the conductive film.

2. 发明公开

EP1094505A1 PLASMA TREATING DEVICE 失效
标题翻译：等离子体装置
公开(公告)号：EP1094505A1
公开(公告)日：2001-04-25
申请号：EP97913415.2
申请日：1997-11-20
申请人： TOKYO ELECTRON LIMITED
发明人： ISHIZUKA, Shuichi-202, Shiroyama New Heights , NAKASE, Risa-206, Celsion Sagamihara , AOKI, Takeshi
IPC分类号： H01L21/31 , H01L21/205 , H01L21/3065 , C23C16/50 , C23F4/00 , H05H1/46
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32284
摘要： The invention is intended to produce a plasma of uniform density in a wide region and to achieve plasma processing of a surface of a wafer (W) highly uniformly. A transmission window (23) which transmits a microwave is held on an upper wall of a vacuum vessel (2) having a plasma chamber (21) and a film forming chamber (22), and a waveguide (4) for guiding the microwave of 2.45 GHz for propagation into the vacuum vessel (2) in a TM mode is joined to the outer surface of the transmission window (23). The waveguide (4) has a rectangular waveguide section (41) a cylindrical waveguide section (42) serving as a TM converter, and a conical waveguide section (43) having an exit end connected to the outer surface of the transmission window (23). The microwave is propagated in a TM mode into the vacuum vessel (2) and a magnetic field is created in the vacuum vessel (2). A plasma can be formed in uniform density in the plasma chamber (21) if the inside diameter (A) of the exit end of the conical waveguide section is in the range of 130 to 160 mm, so that the highly uniform plasma processing of the surface of a wafer (W) of, for example, 8 in. in diameter can be achieved.

3. 发明公开

EP1033746A1 METHOD OF FORMING FILM BY PLASMA 审中-公开
标题翻译：等离子体 - ABSCHEIDUNG EINES膜
公开(公告)号：EP1033746A1
公开(公告)日：2000-09-06
申请号：EP98954753.4
申请日：1998-11-19
申请人： Tokyo Electron Limited
发明人： NAKASE, Risa , AOKI, Takeshi , SUZUKI, Akira , KATO, Yoshihiro
IPC分类号： H01L21/314
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/30 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801
摘要： In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450°C. At this time, F containing gases are emitted from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, it is required to enhance thermostability.
A compound gas of C and F, e.g., C 4 F 8 gas, a hydrocarbon gas, e.g., C 2 H 4 gas, and CO gas are used as thin film deposition gases. These gases are activated to deposit a CF film on a semiconductor wafer 10 at a process temperature of 400°C using active species thereof. Since the number of diamond-like bonds are greater than the number of graphite-like bonds by the addition of CO gas, the bonds are strengthened and difficult to be cut even at a high temperature, so that thermostability is enhanced.
摘要翻译：在使用CF膜作为半导体装置的层间绝缘膜的情况下，在形成钨的布线时，将CF膜加热至例如约400〜450℃的温度。此时，含有F的气体从CF膜中排出，由于布线的腐蚀和膜厚度的降低，存在各种缺陷。为了防止这种情况，需要提高热稳定性。使用C和F的复合气体，例如C 4 F 8气体，烃气体例如C 2 H 4气体和CO气体作为薄膜沉积气体。这些气体被激活，以使用其活性物质在400℃的温度下在半导体晶片10上沉积CF膜。由于通过添加CO气体，类金刚石键的数量大于石墨状键的数量，所以即使在高温下也会使键强化，难以切断，从而提高热稳定性。

4. 发明公开

EP1063690A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译： VERFAHREN UND VORRICHTUNG ZUM PLASMABEARBEITEN
公开(公告)号：EP1063690A1
公开(公告)日：2000-12-27
申请号：EP99907872.8
申请日：1999-03-05
申请人： Tokyo Electron Limited
发明人： AMANO, Hideaki , OKA, Shinsuke , NAKASE, Risa , AOKI, Takeshi , AKAHORI, Takashi
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： C23C16/45574 , C23C16/45502 , C23C16/45512 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/67017 , H01L21/6708
摘要： A process gas supply portion 5 of plasma processing apparatus has a plurality of process gas supply holes 55 for introducing process gas into a processing chamber 22. Each of the process gas introducing ports 55 has an axis A diagonally crossing a plane including a surface of a substrate W to be processed to be placed on a susceptor 4 at a specified crossing angle of θ. The axes of each process gas introducing ports 55 simultaneously cross each other at a position. The position is located on a normal line B at the center of the surface to be processed of the substrate W placed on a susceptor 4, and a distance L apart from the surface to be processed toward the plasma chamber 21. This configuration equalizes concentration distribution of the process gas above the substrate W.
摘要翻译：等离子体处理装置的处理气体供给部分5具有多个处理气体供给孔55，用于将处理气体引入处理室22.每个工艺气体导入口55具有与包括要处理的衬底W以指定的交叉角度被放置在基座4上。每个处理气体引入口55的轴线在一个位置上同时交叉。该位置位于放置在基座4上的基板W的被处理面的中心的法线B上，距离被处理面等离子体室21的距离L.这种构造使浓度分布的工艺气体

5. 发明公开

EP0933802A1 PROCESS FOR THE PRODUCTION OF SEMICONDUCTOR DEVICE 失效
标题翻译：生产半导体器件的方法
公开(公告)号：EP0933802A1
公开(公告)日：1999-08-04
申请号：EP97911513.6
申请日：1997-11-11
申请人： TOKYO ELECTRON LIMITED
发明人： AKAHORI, Takashi , ISHIZUKA, Shuichi, 202, Shiroyama New Heights , ENDO, Shunichi , AOKI, Takeshi , HIRATA, Tadashi, 1004, Dragon Mansion
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/31138 , H01L21/76802 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice.
A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl 3 gas. Thereafter, when the surface of the wafer is irradiated with O 2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO 2 or the like may be substituted for the conductive film.
摘要翻译：本发明的一个目的是提供一种含氟碳膜（CF膜）的方法，该方法可以实施含氟碳膜的层间绝缘膜。在CF膜4上形成导电膜例如TiN膜41.在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体对TiN膜41进行蚀刻。之后，当用O2等离子体照射晶片的表面时，CF膜被化学蚀刻，并且抗蚀剂膜42也被蚀刻。但是，由于TiN膜41用作掩模，所以可以形成预定的孔。尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作用于将互连层粘附到CF膜4并且用作互连层的一部分的粘附层。作为掩模，可以用SiO 2等的绝缘膜代替导电膜。

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