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1. 发明授权

EP1193751B1 ELECTRODE AND METHOD OF MANUFACTURING AN ELECTRODE 有权
标题翻译：电极及其制造方法铅
公开(公告)号：EP1193751B1
公开(公告)日：2006-05-17
申请号：EP00915374.3
申请日：2000-04-06
申请人： TOKYO ELECTRON LIMITED
发明人： KOMINO, Mitsuaki , AMANO, Hideaki , ENDO, Shosuke , FUJISATO, Toshiaki , SASAKI, Yasuharu
IPC分类号： H01L21/68 , H01L21/3065 , H01L21/31 , H05H1/46 , C23C14/34 , C23C16/455 , C23C16/458 , C23C16/509 , B23Q3/15
CPC分类号： H01L21/6831
摘要： A wafer stage (24) comprises a flat lower heater (38), upper and lower ceramic-metal members (40A, 40B) cooperating to sandwich the lower heater (38), and an electrostatic ceramic chuck (28) arranged on the upper side of the ceramic-metal member (40A) for holding a wafer (W) to be processed. The ceramic-metal member (40A) and the electrostatic chuck (28) have substantially the same coefficient of linear expansion so that the difference in deformation between the two will not cause separation or damage to the electrostatic chuck (28).

2. 发明公开

EP1100119A1 PLASMA PROCESSING METHOD 审中-公开
标题翻译： VERFAHREN ZUR PLASMABEARBEITUNG
公开(公告)号：EP1100119A1
公开(公告)日：2001-05-16
申请号：EP99957662.2
申请日：1999-06-28
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： H01L21/31 , H01L21/316
CPC分类号： C23C16/511 , C23C16/401 , C23C16/402 , H01J37/32192 , H01J37/3266 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/312 , H01L21/3127 , H01L21/31629 , H01L21/3185 , H01L21/32136 , H01L21/76804
摘要： There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil 26 and an auxiliary electromagnetic coil 27 during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer W during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower. Therefore, the heat gain into the wafer W is greater than that during the thin-film deposition, so that it is possible to shorten the preheat time.
摘要翻译：提供了一种能够在预热进行之后沉积薄膜时缩短预热时间的方法。在预热和薄膜沉积期间，主电磁线圈26和辅助电磁线圈27的电流值被设定为彼此不同，以改变所获得的磁场的形状，使得磁场具有小的磁通密度尽管在薄膜沉积期间具有较高的均匀性，但磁场具有大的磁通密度，尽管在预热期间具有较低的均匀性。结果，在薄膜沉积期间在晶片W的平面中产生基本均匀的等离子体，使得可以进行均匀的薄膜沉积。另一方面，在预热期间，尽管其均匀性较低，但是产生具有比薄膜沉积期间更大的密度的等离子体。因此，进入晶片W的热增益大于薄膜沉积期间的热增益，从而可以缩短预热时间。

3. 发明授权

EP1169490B1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空处理装置
公开(公告)号：EP1169490B1
公开(公告)日：2008-03-12
申请号：EP01900658.4
申请日：2001-01-11
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： C23C16/44 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/4412 , C23C16/4583 , C23C16/463 , H01L21/67103

4. 发明公开

EP1100115A1 DEVICE AND METHOD FOR PLASMA PROCESSING 审中-公开
标题翻译：装置和方法的等离子处理
公开(公告)号：EP1100115A1
公开(公告)日：2001-05-16
申请号：EP99957661.4
申请日：1999-06-28
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： H01L21/205 , H01L21/31 , H01L21/3065 , H05H1/46
CPC分类号： H01L21/6719 , H01J37/32229 , H01J37/32743 , H01J37/32788 , H01J37/32899 , H05H2001/4622
摘要： The vacuum processing chambers 31 of the plasma processing units 3A and 3B are connected to the transfer chamber 2 and the wafer W in the positioned state is transferred from the transfer chamber 2 to the mounting stages 4 in the vacuum processing chambers 31. The volume and length of the wave guide 5 are the same between the plasma processing units 3A and 3B. The location relationship of the wave guide 5 to the transfer directions M1 and M2 of the transfer arm 61 is the same between the plasma processing units 3A and 3B. As a result, the location relationship of the wave guide 5 to the wafer W mounted on the mounting stage 4 in a predetermined direction is the same between the plasma processing units 3A and 3B.

5. 发明公开

EP1063690A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译： VERFAHREN UND VORRICHTUNG ZUM PLASMABEARBEITEN
公开(公告)号：EP1063690A1
公开(公告)日：2000-12-27
申请号：EP99907872.8
申请日：1999-03-05
申请人： Tokyo Electron Limited
发明人： AMANO, Hideaki , OKA, Shinsuke , NAKASE, Risa , AOKI, Takeshi , AKAHORI, Takashi
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： C23C16/45574 , C23C16/45502 , C23C16/45512 , C23C16/4558 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01L21/67017 , H01L21/6708
摘要： A process gas supply portion 5 of plasma processing apparatus has a plurality of process gas supply holes 55 for introducing process gas into a processing chamber 22. Each of the process gas introducing ports 55 has an axis A diagonally crossing a plane including a surface of a substrate W to be processed to be placed on a susceptor 4 at a specified crossing angle of θ. The axes of each process gas introducing ports 55 simultaneously cross each other at a position. The position is located on a normal line B at the center of the surface to be processed of the substrate W placed on a susceptor 4, and a distance L apart from the surface to be processed toward the plasma chamber 21. This configuration equalizes concentration distribution of the process gas above the substrate W.
摘要翻译：等离子体处理装置的处理气体供给部分5具有多个处理气体供给孔55，用于将处理气体引入处理室22.每个工艺气体导入口55具有与包括要处理的衬底W以指定的交叉角度被放置在基座4上。每个处理气体引入口55的轴线在一个位置上同时交叉。该位置位于放置在基座4上的基板W的被处理面的中心的法线B上，距离被处理面等离子体室21的距离L.这种构造使浓度分布的工艺气体

6. 发明授权

EP1115146B1 METHOD AND APPARATUS FOR VACUUM PROCESSING 有权
标题翻译：方法和装置真空处理
公开(公告)号：EP1115146B1
公开(公告)日：2007-10-10
申请号：EP99957660.6
申请日：1999-06-28
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： H01L21/00 , H01L21/683
CPC分类号： H01L21/67288 , C23C16/4581 , C23C16/4586 , C23C16/466 , H01L21/67109 , H01L21/67248 , H01L21/67253 , H01L21/6833
摘要： A semiconductor wafer (W) is placed on a stage (3) in a vacuum container of a vacuum processing apparatus such as an apparatus for film forming and etching, and the wafer is processed while gaseous heat medium, such as helium, is supplied between the wafer and the stage to maintain the wafer at predetermined temperature. To detect an abnormal leakage of the helium gas between the wafer and the stage easily, the wafer is held by an electrostatic chuck on the stage of dielectric substance with a mirror finish, so that the helium gas from a gas channel (5) is confined under the wafer. A flow meter is provided in the gas channel. If a threshold corresponding to a given leakage is exceeded, a warning signal is issued.

7. 发明授权

EP1079423B1 APPARATUS FOR GAS PROCESSING 有权
标题翻译： DEVICE FOR气体处理
公开(公告)号：EP1079423B1
公开(公告)日：2007-01-03
申请号：EP99913610.4
申请日：1999-04-09
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： H01L21/00 , H01J37/32 , C23C16/24
CPC分类号： H01L21/67069
摘要： An apparatus for gas processing comprises a showerhead (32) placed immediately under a through window (23) and opposed to a wafer W. The opening area per unit area of gas holes (33) in the showerhead is greater in its outer portions than in its central portions. A gas hole control (34) for opening and closing the gas holes (33) is provided under the showerhead (32). As a result, the surface of a substrate such as a wafer can be uniformly processed by using plasma.

8. 发明公开

EP1193751A1 ELECTRODE, WAFER STAGE, PLASMA DEVICE, METHOD OF MANUFACTURING ELECTRODE AND WAFER STAGE 有权
标题翻译：电极，半导体盘承载体，制造方法铅和半导体片携载
公开(公告)号：EP1193751A1
公开(公告)日：2002-04-03
申请号：EP00915374.3
申请日：2000-04-06
申请人： TOKYO ELECTRON LIMITED
发明人： KOMINO, Mitsuaki , AMANO, Hideaki , ENDO, Shosuke , FUJISATO, Toshiaki , SASAKI, Yasuharu
IPC分类号： H01L21/68 , H01L21/3065 , H01L21/31 , H05H1/46 , C23C14/34 , C23C16/455 , C23C16/458 , C23C16/509 , B23Q3/15
CPC分类号： H01L21/6831
摘要： A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.

9. 发明公开

EP1169490A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空处理厂
公开(公告)号：EP1169490A1
公开(公告)日：2002-01-09
申请号：EP01900658.4
申请日：2001-01-11
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki
IPC分类号： C23C16/44 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/4412 , C23C16/4583 , C23C16/463 , H01L21/67103
摘要： In a plasma CVD apparatus for applying a film deposition process to a semiconductor wafer (W), a wafer placement stage (3) is provided at a center of a vacuum chamber (2). The placement stage (3) is mounted to a side wall (63) via a support part (6). An exhaust port (9) having a diameter equal to or smaller than a diameter of the placement stage (3) is provided under the placement stage (3). A center axis (C1) of the exhaust port (9) is displaced from a center axis of the placement stage (3) in a direction opposite to an extending direction of the support part (6), thereby achieving an efficient exhaust.

10. 发明公开

EP1154466A1 METHOD AND APPARATUS FOR PLASMA PROCESSING 审中-公开
标题翻译：等离子体处理方法及装置
公开(公告)号：EP1154466A1
公开(公告)日：2001-11-14
申请号：EP00901898.7
申请日：2000-01-26
申请人： TOKYO ELECTRON LIMITED
发明人： AMANO, Hideaki , ISHIZUKA, Shuichi , KOBAYASHI, Takashi , TSUBOI, Kyo
IPC分类号： H01L21/205
CPC分类号： H01L21/67103 , C23C16/4585 , C23C16/4586 , C23C16/46 , C23C16/50 , C23C16/511 , H01J37/32192 , H01J2237/2001 , H01L21/67069
摘要： A temperature-adjusting means is buried in an upper portion of a ring member which surrounds a stage for a semiconductor wafer and has the same height as the stage. The temperature-adjusting means is controlled by the ring-member temperature controller 61, according to a recipe for setting a process condition, in such a manner that temperatures of a surface of the wafer and of an upper surface of the ring member are even, respectively. At that time, a temperature difference between above the wafer and above the upper surface of the ring member is made small, which enables to form a film having a higher uniformity.

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