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1. 发明公开

EP3162922A1 ß-Ga2O3 SINGLE-CRYSTAL SUBSTRATE& xA; 审中-公开
标题翻译： SS-Ga2O3系EINKRISTALLSUBSTRATE
公开(公告)号：EP3162922A1
公开(公告)日：2017-05-03
申请号：EP15815529
申请日：2015-06-29
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： WATANABE SHINYA , KOSHI KIMIYOSHI , YAMAOKA YU , IIZUKA KAZUYUKI , TAKIZAWA MASARU , MASUI TAKEKAZU
IPC分类号： C30B29/16
CPC分类号： C30B29/16 , C01G15/00 , C01P2002/77 , C30B15/34
摘要： A high-quality ß-Ga2O3 single-crystal substrate having little variation in crystal structure is provided. Provided in one embodiment is a ß-Ga203 single-crystal substrate 1 formed from a ß-Ga2O3 single crystal, wherein the principal surface is a plane parallel to the b axis of the ß-Ga203 single crystal and the maximum value of ”É on any straight line on the principal surface which passes through the center of the principal surface is not more than 0.7264. ”É is the difference between the maximum value and the minimum value obtained by subtracting Éa from És at each measurement position, where: És represents the angle formed by the incident direction of the X ray at the peak position of an X-ray rocking curve and the principal surface on the straight line; and Éa represents the angle on a straight approximation line obtained by using the method of least squares to linearly approximate the curve representing the relationship between the aforementioned És and the measurement position therefor.
摘要翻译：提供了晶体结构变化很小的高质量β-Ga 2 O 3单晶衬底。在一个实施方式中，提供了由β-Ga 2 O 3单晶形成的β-Ga 2 O 3单晶衬底1，其中主表面是与β-Ga 2 O 3单晶的b轴平行的平面，并且最大值“ 通过主表面中心的主表面上的任何直线不超过0.7264。 “是从各个测量位置的És减去Éa而得到的最大值与最小值的差，其中：∈s表示X射线摇摆曲线的峰值位置处的X射线的入射方向所成的角度和直线上的主面; ∈a表示通过使用最小二乘法获得的直线近似直线上的角度，以线性近似表示上述两者之间的关系的曲线和其测量位置之间的关系。

2. 发明公开

EP3162922A4 ß-Ga2O3 SINGLE-CRYSTAL SUBSTRATE& xA; 审中-公开
公开(公告)号：EP3162922A4
公开(公告)日：2018-03-28
申请号：EP15815529
申请日：2015-06-29
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： WATANABE SHINYA , KOSHI KIMIYOSHI , YAMAOKA YU , IIZUKA KAZUYUKI , TAKIZAWA MASARU , MASUI TAKEKAZU
IPC分类号： C30B29/16
CPC分类号： C30B29/16 , C01G15/00 , C01P2002/77 , C30B15/34
摘要： A high-quality ß-Ga2O3 single-crystal substrate having little variation in crystal structure is provided. Provided in one embodiment is a ß-Ga203 single-crystal substrate 1 formed from a ß-Ga2O3 single crystal, wherein the principal surface is a plane parallel to the b axis of the ß-Ga203 single crystal and the maximum value of ”É on any straight line on the principal surface which passes through the center of the principal surface is not more than 0.7264. ”É is the difference between the maximum value and the minimum value obtained by subtracting Éa from És at each measurement position, where: És represents the angle formed by the incident direction of the X ray at the peak position of an X-ray rocking curve and the principal surface on the straight line; and Éa represents the angle on a straight approximation line obtained by using the method of least squares to linearly approximate the curve representing the relationship between the aforementioned És and the measurement position therefor.

3. 发明公开

EP3006607A4 METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 有权转让
标题翻译： METHOD FOR作者BETA-Ga2O3系单晶及其制造文教BETA-Ga2O3单晶衬底和方法
公开(公告)号：EP3006607A4
公开(公告)日：2017-01-11
申请号：EP14798117
申请日：2014-05-02
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： KOSHI KIMIYOSHI , MASUI TAKEKAZU , TAKIZAWA MASARU
IPC分类号： C30B29/16 , C30B15/34
CPC分类号： C30B15/34 , C30B15/36 , C30B29/16
摘要： Provided are: a method for cultivating a ²-Ga 2 O 3 single crystal which makes it possible to obtain a wide ²-Ga 2 O 3 seed crystal and is to be used in the cultivation of a flat ²-Ga 2 O 3 single crystal which minimizes widening of the shoulder in the width direction; a ²-Ga 2 O 3 -single-crystal substrate obtained by using the same; and a production method therefor. Provided is one embodiment which is a method for cultivating a ²-Ga 2 O 3 single crystal which uses the EFG method and includes: a step for raising a Ga 2 O 3 melt (12) inside a crucible (13) up to a die (14) opening (14b) via a die (14) slit (14a), and while the horizontal position of a seed crystal (20) is shifted in the width direction (W) from the width direction (W) center of the die (14), contacting the seed crystal (20) and the Ga 2 O 3 melt (12) in the opening (14b) of the die (14); and a step for pulling up the seed crystal (20) which contacted the Ga 2 O 3 melt (12), and growing the ²-Ga 2 O 3 single crystal (25).

4. 发明公开

EP2998419A4 METHOD FOR CULTIVATING -Ga2O3 SINGLE CRYSTAL, AND -Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：方法为培养-GA2O3：单晶，-GA2O3单晶衬底和方法及其制造
公开(公告)号：EP2998419A4
公开(公告)日：2017-01-11
申请号：EP14797616
申请日：2014-05-02
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： KOSHI KIMIYOSHI , WATANABE SHINYA
IPC分类号： C30B29/16 , C30B15/34
CPC分类号： C30B15/34 , C30B15/36 , C30B29/16
摘要： Provided are: a method for cultivating a ²-Ga 2 O 3 single crystal which makes it possible to obtain a flat ² -Ga 2 O 3 single crystal having high crystal quality; a ² -Ga 2 O 3 -single-crystal substrate; and a method for producing the same. Provided is one embodiment which is a method for cultivating a ² -Ga 2 O 3 single crystal (25) including a step for contacting a flat seed crystal (20) with a Ga 2 O 3 melt (12), and a step for pulling up the seed crystal (20) and growing a flat ² -Ga 2 O 3 single crystal (25) having a principal surface (26a) which intersects a surface (100), in a manner such that the crystal information of the vaporized material (23) of the Ga 2 O 3 melt (12) adhered to the principal surface of the seed crystal (20) is not passed on, wherein when growing the ² -Ga203 single crystal (25), the shoulder of the ² -Ga 2 O 3 single crystal (25); is only widened in the thickness direction (t).
摘要翻译：提供有：用于培养的方法²-的Ga 2 O 3单晶这使得能够获得平坦²-Ga 2 O具有高晶体质量3单晶; 一个²-Ga 2 O 3 - 单晶体衬底; 及其制造方法。提供的是一个实施例，其是用于培养²-Ga 2 O 3单晶（25）包括用于接触扁平晶种（20）的步骤的方法用的Ga 2 O 3熔液（12），以及用于拉着一个步骤了晶种（20）和生长平面²-Ga 2 O 3单晶（25）具有主面（26a）的相交的表面（100），（在一个方式检验并汽化材料的晶体信息 23）粘附到所述晶种（20）的主面中的Ga 2 O 3熔液（12）的不通过上，worin当生长单晶²-Ga203（25），所述的²-Ga 2肩 O 3单晶（25）; 仅在厚度方向（T）加宽。

5. 发明公开

EP2858094A4 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：半导体层积体结构及半导体元件
公开(公告)号：EP2858094A4
公开(公告)日：2015-12-16
申请号：EP13798034
申请日：2013-05-27
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： IIZUKA KAZUYUKI , WATANABE SHINYA , KOSHI KIMIYOSHI , WAKIMOTO DAIKI , YAMASHITA YOSHIHIRO , SATO SHINKURO
IPC分类号： H01L21/205 , C23C16/34 , C30B25/18 , C30B29/16 , C30B29/38 , C30B29/40 , H01L29/20 , H01L33/16 , H01L33/32
CPC分类号： H01L29/2003 , C30B25/183 , C30B25/186 , C30B29/16 , C30B29/403 , C30B29/406 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32

6. 发明公开

EP2801645A4 METHOD FOR GROWING Beta-Ga2O3 SINGLE CRYSTAL 有权转让
标题翻译： VERFAHREN ZURZÜCHTUNGVON BETA-GA203-EINKRISTALLEN
公开(公告)号：EP2801645A4
公开(公告)日：2015-03-04
申请号：EP12849124
申请日：2012-11-12
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： KOSHI KIMIYOSHI , MATSUBARA HARUKA , WATANABE SHINYA
IPC分类号： C30B29/16 , C30B15/34 , C30B15/36
CPC分类号： C30B15/34 , C30B15/36 , C30B29/16
摘要： Provided is a method for growing a ²-Ga 2 O 3 single crystal, which is capable of effectively suppressing twinning of the crystal. One embodiment of the present invention provides a method for growing a ²-Ga 2 O 3 single crystal (25) using an EFG method, which comprises: a step wherein a seed crystal (20) is brought into contact with a Ga 2 O 3 melt (12); and a step wherein the seed crystal (20) is pulled and a ²-Ga 2 O 3 single crystal (25) is grown without performing a necking process. In the method for growing a ²-Ga 2 O 3 single crystal, the widths of the ²-Ga 2 O 3 single crystal (25) are 110% or less of the widths of the seed crystal (20) in all directions.
摘要翻译：提供了能够有效地抑制晶体结孪的生长²-Ga 2 O 3单晶的方法。本发明的一个实施方案提供了一种使用EFG方法生长2-Ga 2 O 3单晶（25）的方法，其包括：使晶种（20）与Ga 2 O 3接触的步骤熔化（12）; 以及在不进行缩颈处理的情况下生长晶种（20）并且生长出2-Ga 2 O 3单晶（25）的步骤。在生长2-Ga 2 O 3单晶的方法中，2-Ga 2 O 3单晶（25）的宽度为晶种（20）的宽度的所有方向的110％以下。

7. 发明公开

EP2933359A4 METHOD FOR GROWING A BETA-GA2O3 SINGLE CRYSTAL 有权转让
标题翻译：方法进行繁殖BETA-Ga2O3系单晶
公开(公告)号：EP2933359A4
公开(公告)日：2016-07-20
申请号：EP13853138
申请日：2013-10-09
申请人： TAMURA SEISAKUSHO KK , KOHA CO LTD
发明人： WATANABE SHINYA , WAKIMOTO DAIKI , IIZUKA KAZUYUKI , KOSHI KIMIYOSHI , MASUI TAKEKAZU
IPC分类号： C30B29/16 , C30B15/34 , C30B15/36
CPC分类号： C30B15/34 , C30B15/30 , C30B15/36 , C30B29/16
摘要： Provided is a method for growing a ²-Ga 2 O 3 single crystal, which enables the production of a plate-like ²-Ga 2 O 3 single crystal having high crystal quality. In one embodiment, a method for growing a ²-Ga 2 O 3 single crystal employing an EFG method is provided, said method comprising the steps of: bringing a plate-like seed crystal (20) into contact with a Ga203 melt (12), wherein the plate-like seed crystal (20) comprises a ²-Ga 2 O 3 single crystal having a defect density of 5x10 5 /cm 2 or less in the whole region; and pulling up the seed crystal (20) to grow a ²-Ga 2 O 3 single crystal (25).

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