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1. 发明授权

EP3073587B1 SEMICONDUCTOR LASER ELEMENT 有权
公开(公告)号：EP3073587B1
公开(公告)日：2020-08-12
申请号：EP14864863.7
申请日：2014-11-06
申请人： Sony Corporation
发明人： WADA, Shinichi , KURAMOTO, Masaru , WATANABE, Hideki
IPC分类号： H01S5/028 , H01S5/042 , H01S5/065 , H01S5/06 , H01S5/14 , H01S5/22 , H01S5/343

2. 发明公开

EP3352313A1 SURFACE LIGHT-EMITTING LASER 有权转让
公开(公告)号：EP3352313A1
公开(公告)日：2018-07-25
申请号：EP16846188.7
申请日：2016-08-18
申请人： Sony Corporation
发明人： IZUMI, Shoichiro , HAMAGUCHI, Tatsushi , FUTAGAWA, Noriyuki , KURAMOTO, Masaru
IPC分类号： H01S5/183 , H01S5/343 , H01S5/026
CPC分类号： H01S5/187 , H01S5/026 , H01S5/183 , H01S5/18311 , H01S5/18388 , H01S5/34 , H01S5/343
摘要： A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.

3. 发明公开

EP3073587A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：EP3073587A1
公开(公告)日：2016-09-28
申请号：EP14864863.7
申请日：2014-11-06
申请人： Sony Corporation
发明人： WADA, Shinichi , KURAMOTO, Masaru , WATANABE, Hideki
IPC分类号： H01S5/028 , H01S5/042 , H01S5/065
摘要： A semiconductor laser element includes a stacked structure body, a second electrode 62, and a first electrode 61; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62B of the second electrode of at least one side structure body 72; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72, on which portions neither the second electrode nor the protection electrode 81 is formed.
摘要翻译：半导体激光元件包括层叠结构体，第二电极62以及第一电极61，形成由至少一部分叠层结构体形成的脊条结构71; 在脊条形结构71的两侧形成由叠层结构体形成的侧面结构体72，第二电极62被分成用于经由发光区域向第一电极发送直流电的第一部分和用于向可饱和吸收区域施加电场的第二部分62B; 保护电极81形成在与至少一个侧面结构体72的第二电极的第二部分62B相邻的部分上; 并且由氧化物绝缘材料制成的绝缘层56形成为从脊条形结构71的一部分延伸到侧结构体72的未形成第二电极和保护电极81的部分上的部分。

4. 发明公开

EP2667463A1 SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译：半导体激光元件
公开(公告)号：EP2667463A1
公开(公告)日：2013-11-27
申请号：EP12737034.4
申请日：2012-01-11
申请人： Sony Corporation
发明人： WATANABE, Hideki , KURAMOTO, Masaru , OKI, Tomoyuki
IPC分类号： H01S5/065 , H01S5/22
CPC分类号： H01S5/0658 , B82Y20/00 , H01S5/0287 , H01S5/0602 , H01S5/0625 , H01S5/0657 , H01S5/1014 , H01S5/141 , H01S5/22 , H01S5/222 , H01S5/34333 , H01S2301/176
摘要： A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region 41A, a second light emission region 41B, a saturable absorption region 42 sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The semiconductor laser device has a ridge stripe structure. The second electrode 62 is configured of a first portion 62A, a second portion 62B, and a third portion 62C. 1 2-ave /W 1-ave is satisfied where w 1-ave is an average width of a portion having the ridge stripe structure of the first portion 62A and W 2-ave is an average width of a portion having the ridge stripe structure of the second portion 62B.
摘要翻译：提供了一种双面型GaN基半导体激光器件，其具有在面向第一发光区域的可饱和吸收区域中的区域中不易发生损伤的构造和结构。半导体激光装置包括第一发光区域41A，第二发光区域41B，夹在前述发光区域之间的可饱和吸收区域42，第一电极和第二电极。激光从其第二发光区域侧的端面发射。该半导体激光装置具有脊条形结构。第二电极62由第一部分62A，第二部分62B和第三部分62C构成。 1

5. 发明公开

EP3159983A1 LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权转让
标题翻译：发光元件及其制造方法
公开(公告)号：EP3159983A1
公开(公告)日：2017-04-26
申请号：EP15809837.6
申请日：2015-04-16
申请人： Sony Corporation
发明人： FUTAGAWA, Noriyuki , HAMAGUCHI, Tatsushi , IZUMI, Shoichiro , KURAMOTO, Masaru
IPC分类号： H01S5/183 , H01S5/343
CPC分类号： H01S5/34333 , H01L21/02293 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02639 , H01L21/0334 , H01L21/28 , H01S5/0201 , H01S5/0217 , H01S5/0425 , H01S5/18327 , H01S5/18341 , H01S5/1835 , H01S5/18361 , H01S5/2009 , H01S5/3201 , H01S5/3202 , H01S2301/176 , H01S2304/04 , H01S2304/12
摘要： A light-emitting element includes at least a GaN substrate 11; a first light reflecting layer 41 formed on the GaN substrate 11 and functioning as a selective growth mask layer 44; a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 that are formed on the first light reflecting layer; and a second electrode 32 and a second light reflecting layer 42 that are formed on the second compound semiconductor layer 22. An off angle of the plane orientation of the surface of the GaN substrate 11 is 0.4 degrees or less, the area of the first light reflecting layer 41 is 0.8S 0 or less, where So represents the area of the GaN substrate 11, and as a bottom layer 41A of the first light reflecting layer, a thermal expansion relaxation film 44 is formed on the GaN substrate 11.
摘要翻译：发光元件至少包括GaN衬底11; 形成在GaN衬底11上并且用作选择性生长掩模层44的第一光反射层41; 形成在第一光反射层上的第一化合物半导体层21，有源层23和第二化合物半导体层22; 以及形成在第二化合物半导体层22上的第二电极32和第二光反射层42. GaN衬底11的表面的面取向的偏离角为0.4度或更小，第一光的面积反射层41的厚度为0.8S0或更小，其中So表示GaN衬底11的面积，并且作为第一光反射层的底层41A，热膨胀弛豫膜44形成在GaN衬底11上。

6. 发明公开

EP2534633A1 GREEN ENERGY GENERATION APPARATUS, MOBILE DEVICE, ELECTRIC STORAGE APPARATUS, AND MANAGEMENT METHOD OF GREEN ENERGY INFORMATION 审中-公开
标题翻译：器具，用于产生绿色能源，移动设备，蓄电装置和方法管理信息绿色能源
公开(公告)号：EP2534633A1
公开(公告)日：2012-12-19
申请号：EP11741988.7
申请日：2011-01-20
申请人： Sony Corporation
发明人： WAKITA, Yoshihiro , NAKANO, Jun , KURAMOTO, Masaru , IMAI, Yutaka
IPC分类号： G06Q50/00 , H02J3/00
CPC分类号： G06Q50/06 , G06Q30/04 , H02J3/008 , H02J3/382 , H02J3/383 , H02J3/386 , H02J7/35 , H04L63/0823 , Y02E10/563 , Y02E10/566 , Y02E10/763 , Y04S10/60 , Y04S40/24 , Y04S50/10 , Y04S50/12
摘要： A method is provided for authenticating characteristics of electrical energy. The method comprises acquiring a key, acquiring an amount of electrical energy, and generating a digital signature based on the amount and the key. The method further comprises generating a certificate comprising the signature and the amount.

7. 发明公开

EP3159984A1 LIGHT EMITTING ELEMENT 有权转让
标题翻译：发光元件
公开(公告)号：EP3159984A1
公开(公告)日：2017-04-26
申请号：EP15810566.8
申请日：2015-04-17
申请人： Sony Corporation
发明人： HAMAGUCHI, Tatsushi , FUTAGAWA, Noriyuki , IZUMI, Shoichiro , KURAMOTO, Masaru
IPC分类号： H01S5/183
CPC分类号： H01S5/183 , G02B27/48 , H01S5/0207 , H01S5/0425 , H01S5/1092 , H01S5/18341 , H01S5/18358 , H01S5/18361 , H01S5/18369 , H01S5/3202 , H01S5/3203 , H01S5/32341 , H01S5/34333 , H01S5/4087 , H01S5/423 , H01S2304/04 , H04N9/3161
摘要： A light emitting element includes at least a first light reflecting layer 41 formed on a surface of a substrate 11, a laminated structural body 20 made of a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 formed on the first light reflecting layer 41, and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22, the laminated structural body 20 is configured from a plurality of laminated structural body units 20A, a light emitting element unit 10A is configured from each of the laminated structural body units 20A, and a resonator length in the light emitting element unit 10A is different in every light emitting element unit.
摘要翻译：发光元件至少包括形成在基板11的表面上的第一光反射层41，由第一化合物半导体层21，活性层23以及第二化合物半导体层22构成的层叠结构体20 第一光反射层41以及形成在第二化合物半导体层22上的第二电极32和第二光反射层42，层叠结构体20由多个层叠结构体单元20A，发光元件单元10A 由各层叠结构体单元20A构成，发光元件单元10A中的谐振器长度在每个发光元件单元中不同。

8. 发明公开

EP2777108A1 MODE-LOCKED SEMICONDUCTOR LASER DIODE WITH DISPERSION-COMPENSATED EXTERNAL CAVITY 审中-公开
标题翻译：与DISPERSIONSKOMPENSIERTEM外部谐振器耦合方式半导体激光二极管
公开(公告)号：EP2777108A1
公开(公告)日：2014-09-17
申请号：EP12798000.1
申请日：2012-11-09
申请人： Sony Corporation
发明人： KONO, Shunsuke , KURAMOTO, Masaru , MIYAJIMA, Takao , KODA, Rintaro , WATANABE, Hideki
IPC分类号： H01S5/065 , H01S5/14 , H01S5/00 , H01S5/343
CPC分类号： H01S5/141 , B82Y20/00 , H01S3/08004 , H01S3/08009 , H01S3/105 , H01S3/106 , H01S3/1062 , H01S5/0014 , H01S5/0265 , H01S5/0657 , H01S5/101 , H01S5/143 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A semiconductor laser apparatus is provided. The semiconductor laser apparatus includes a mode-locked semiconductor laser device and an external resonator including a dispersion compensation system, wherein the semiconductor laser apparatus is configured to generate self modulation, to introduce a negative group velocity dispersion into the external resonator, and to provide spectral filtering after the external resonator.

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