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1. 发明公开

EP2107598A1 SILICON WAFER BEVELING DEVICE, SILICON WAFER MANUFACTURING METHOD, AND ETCHED SILICON WAFER 有权转让
标题翻译：硅晶片修边装置，硅晶片制造方法及蚀刻硅晶片
公开(公告)号：EP2107598A1
公开(公告)日：2009-10-07
申请号：EP08702776.9
申请日：2008-01-17
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： H01L21/304 , B24B9/00 , H01L21/02
CPC分类号： H01L21/02021 , B24B9/065 , Y10T428/24777
摘要： The invention is directed to a chamfering apparatus for a silicon wafer to chamfer outer edge of a silicon wafer by using a chamfering grindstone, the chamfering apparatus including at least: a holder holding and rotating a silicon wafer; a chamfering grindstone chamfering the outer edge of the silicon wafer held by the holder; and a control apparatus for controlling a chamfered shape by controlling a relative position of the outer edge of the silicon wafer and the chamfering grindstone by numerical control, wherein the control apparatus controls and changes the relative position of the outer edge of the silicon wafer and the chamfering grindstone at the time of chamfering depending on the circumferential position of the silicon wafer held by the holder, a production method, and an etched silicon wafer. This provides a silicon wafer chamfering apparatus, production method and an etched silicon wafer that can suppress variations in the cross-sectional shape dimensions of a chamfered portion after an etching process.
摘要翻译：本发明涉及一种用于硅晶片的倒角装置，该倒角装置通过使用倒角磨石倒角硅晶片的外边缘，所述倒角装置至少包括：保持器，用于保持和旋转硅晶片; 一个斜切磨石，斜切磨削固定在保持器上的硅晶片的外边缘; 以及控制装置，其通过数值控制来控制硅晶片的外缘与倒角磨石的相对位置，从而控制倒角形状，其中，控制装置控制并改变硅晶片的外缘与根据保持器所保持的硅晶片的周向位置进行倒角时的倒角磨石，制造方法以及蚀刻硅晶片。这提供了一种硅晶片倒角装置，制造方法和蚀刻硅晶片，其能够抑制蚀刻工艺之后倒角部分的横截面形状尺寸的变化。

2. 发明授权

EP1920885B1 METHOD OF IMPROVING NANOTOPOGRAPHY OF SURFACE OF WAFER AND WIRE SAW APPARATUS 有权转让
标题翻译：方法提高纳米表面形貌切削和线切割设备
公开(公告)号：EP1920885B1
公开(公告)日：2017-02-08
申请号：EP06782522.4
申请日：2006-08-09
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： OISHI, Hiroshi , KATO, Tadahiro
IPC分类号： B24B27/06 , B24B47/04 , B28D5/04 , H01L21/304
CPC分类号： B28D5/045 , B23D57/0046 , B24B27/0633 , B28D5/0082

3. 发明公开

EP2530704A1 BONDED WAFER PRODUCTION METHOD 有权转让
标题翻译：结合晶圆生产方法
公开(公告)号：EP2530704A1
公开(公告)日：2012-12-05
申请号：EP10844562.8
申请日：2010-12-27
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： H01L21/02 , H01L27/12
CPC分类号： H01L21/76256 , H01L21/304
摘要： The present invention is a method for manufacturing a bonded wafer comprising bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness. As a result, there is provided a method for manufacturing a bonded wafer by which a bonded wafer with no chipping at the outer circumference portion of the thinned bond wafer, such as an SOI layer, and no delamination can be manufactured for a short time, while the shape of the base wafer is prevented from changing and the diameter of the bond wafer is significantly inhibited from decreasing.
摘要翻译：本发明是一种制造键合晶片的方法，该方法包括将键合晶片和基底晶片键合在一起，每个键合晶片和基底晶片在外圆周处具有倒角部分并使键合晶片变薄，其中键合晶片的减薄包括：第一步骤，在结合晶片上进行表面研磨，使得结合晶片的厚度达到第一预定厚度; 去除所述接地键合晶片的外周部分的第二步骤; 以及第三步骤，对结合晶片执行表面研磨，使得结合晶片的厚度达到第二预定厚度。结果，提供了一种用于制造键合晶片的方法，通过该键合晶片可以在短时间内制造在减薄的键合晶片的外围部分处没有碎裂（诸如SOI层）并且没有分层的键合晶片，同时防止基底晶片的形状改变并且显着抑制接合晶片的直径减小。

4. 发明授权

EP2530704B1 METHOD FOR MANUFACTURING BONDED WAFER 有权转让
标题翻译： METHOD FOR WAFER粘
公开(公告)号：EP2530704B1
公开(公告)日：2016-04-20
申请号：EP10844562.8
申请日：2010-12-27
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： H01L21/02 , H01L27/12 , H01L21/762 , H01L21/304
CPC分类号： H01L21/76256 , H01L21/304

5. 发明授权

EP2033739B1 WAFER PRODUCTION METHOD 有权转让
标题翻译：方法的晶圆生产
公开(公告)号：EP2033739B1
公开(公告)日：2011-09-21
申请号：EP07743143.5
申请日：2007-05-11
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： B24B9/06 , B24B49/03 , B24B49/18 , H01L21/304
CPC分类号： B24B9/065 , B24B49/03 , B24B49/18 , H01L21/02021
摘要： A method for producing a wafer comprises a step for chamfering a wafer sliced from an ingot by using a grindstone for chamfering, and a step for performing at least planarization or etching or polishing to the chamfered wafer to obtain a product wafer thinner than the chamfered wafer. The method is further provided, at least before the chamfering step, with a correction step for chamfering a dummy wafer having a thickness equivalent to that of the product wafer, measuring the chamfered shape of the dummy wafer and correcting the shape of the grindstone for chamfering based on the chamfered shape of the dummy wafer thus measured. Then the wafer sliced from an ingot is chamfered by using the grindstone having corrected shape. The wafer producing method by which the chamfered shape of the product wafer can be changed to a desired chamfered shape in a short period is thereby provided.

6. 发明公开

EP2033739A1 METHOD FOR PRODUCING WAFER 有权转让
标题翻译： VERFAHREN ZUR WAFERHERSTELLUNG
公开(公告)号：EP2033739A1
公开(公告)日：2009-03-11
申请号：EP07743143.5
申请日：2007-05-11
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： B24B9/00 , B24B49/03 , H01L21/304
CPC分类号： B24B9/065 , B24B49/03 , B24B49/18 , H01L21/02021
摘要： The present invention is a wafer production method at least comprising a chamfering step of chamfering a wafer sliced from an ingot using a grindstone for chamfering, and a step of obtaining a product wafer thinner than the chamfered wafer by performing at least one or more than one of the following processes on the chamfered wafer: flattening, etching, and polishing, the method at least comprising a correction step of chamfering a dummy wafer equivalent in thickness to the product wafer, measuring the chamfered dummy wafer for its chamfered shape, and correcting the shape of the grindstone for chamfering based on the measured chamfered shape of the dummy wafer, at least before the chamfering step, thereby chamfering the wafer sliced from the ingot using the grindstone for chamfering having its shape corrected. Thus, it is possible to provide a wafer production method allowing a product wafer with a desired chamfered shape to be obtained in a short period of time.
摘要翻译：本发明是一种晶片生产方法，至少包括使用用于倒角的磨石从晶块切片的晶片倒角的倒角步骤，以及通过执行至少一个或多于一个的方法获得比倒角晶片更薄的产品晶片的步骤在倒角晶片上进行以下处理：平坦化，蚀刻和抛光，该方法至少包括将厚度相当的伪晶片倒角到产品晶片的校正步骤，测量倒角形状的倒角虚设晶片，以及校正至少在倒角步骤之前，基于所测量的虚设晶片的倒角形状的倒角磨石的形状，从而使用其形状校正的倒角用磨石倒角从晶锭切片的晶片。因此，可以提供在短时间内获得具有期望的倒角形状的产品晶片的晶片制造方法。

7. 发明授权

EP2107598B1 CHAMFERING APPARATUS FOR SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER 有权转让
标题翻译：用于硅晶片的切割装置和用于生产硅晶片的方法
公开(公告)号：EP2107598B1
公开(公告)日：2016-09-07
申请号：EP08702776.9
申请日：2008-01-17
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： KATO, Tadahiro
IPC分类号： H01L21/304 , B24B9/00 , H01L21/02 , B24B9/06
CPC分类号： H01L21/02021 , B24B9/065 , Y10T428/24777

8. 发明公开

EP1920885A1 METHOD OF IMPROVING NANOTOPOGRAPHY OF SURFACE OF WAFER AND WIRE SAW APPARATUS 有权转让
标题翻译：方法提高纳米表面形貌切削和线切割设备
公开(公告)号：EP1920885A1
公开(公告)日：2008-05-14
申请号：EP06782522.4
申请日：2006-08-09
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： OISHI, Hiroshi , KATO, Tadahiro
IPC分类号： B24B27/06 , B24B47/04 , B28D5/04 , H01L21/304
CPC分类号： B28D5/045 , B23D57/0046 , B24B27/0633 , B28D5/0082
摘要： The present invention provides a method of improving nanotopography of a surface of a wafer sliced from an ingot by using a wire saw apparatus, including improving straightness of feed of a work feed table which is included in the wire saw apparatus and used for feeding the ingot to a wire row formed by winding a wire around a plurality of rollers, and also provides a wire saw apparatus for slicing an ingot to manufacture a wafer, including: a wire row formed by winding a wire around a plurality of rollers; a work feed table for holding and feeding the ingot to the wire row; and a linear-motion guide for linearly guiding the work feed table, wherein a component having a wavelength of 20 to 200 mm in straightness of feed of the work feed table satisfies a PV value ≤ 1.0 µm. As a result, there are provided the method of eliminating slice waviness having periodicity to improve the nanotopography of the surface of the wafer and the wire saw apparatus.
摘要翻译：本发明提供了通过使用线锯装置，包括改善工作进给台的进给直线度的所有其被包括在所述线锯装置和用于喂养铸锭提高从到锭切出的晶片的表面的纳米形貌的方法到通过缠绕导线围绕的辊多个，并且因此形成了导线行提供了一种线锯在锭切割装置以制造晶片，其中包括：一个线行由卷绕辊子的多个导线形成的; 用于保持和馈送锭到导线行工作进给台; 和直线运动引导件用于线性引导工作进给台，worin具有在工作进给台SATIS外资企业进料的PV值‰1.0微米的平直度为20〜200mm的波长的组分。其结果是，设置有消除具有周期性的切片波纹度，改善晶片和线锯装置的表面的纳米形貌的方法。

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