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1. 发明公开

EP1995788A1 METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜREIN SUBSTRE EINES FOTOELEKTRISCHEN KONVERSIONSELEMENTS
公开(公告)号：EP1995788A1
公开(公告)日：2008-11-26
申请号：EP07738265.3
申请日：2007-03-12
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L31/04 , H01L21/02 , H01L21/20 , H01L21/205
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A silicon layer (10B) having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate (100) and hydrogen ions are implanted to a predetermined depth (L) into the surface region of the silicon substrate (100) through the silicon layer (10B) to form a hydrogen ion-implanted layer (11). Then, an n-type germanium-based crystal layer (20A) whose conductivity type is opposite to that of the silicon layer (10B) and a p-type germanium-based crystal layer (20B) whose conductivity type is opposite to that of the germanium-based crystal layer (20A) are successively vapor-phase grown to provide a germanium-based crystal (20). The surface of the germanium-based crystal layer (20B) and the surface of the supporting substrate (30) are bonded together. In this state, impact is applied externally to separate a silicon crystal (10) from the silicon substrate (100) along the hydrogen ion-implanted layer (11), thereby transferring (peeling off) a laminated structure composed of the germanium-based crystal (20) and the silicon crystal (10) onto the supporting substrate (30).
摘要翻译：在硅衬底（100）的表面上设置具有与本体相反的导电类型的硅层（10B），并将氢离子注入预定深度（L）到硅衬底（100）的表面区域）通过硅层（10B）形成氢离子注入层（11）。然后，其导电类型与硅层（10B）的导电类型相反的n型锗基晶体层（20A）和与导电类型相反的p型锗基晶体层（20B）锗基晶体层（20A）依次气相生长以提供锗基晶体（20）。锗基晶体层（20B）的表面和支撑基板（30）的表面结合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层（11）从硅衬底（100）分离硅晶体（10），从而转移（剥离）由锗基晶体（20）和硅晶体（10）到支撑衬底（30）上。

2. 发明公开

EP1992949A1 MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP 有权
标题翻译：微芯片和SOI衬底生产微芯片
公开(公告)号：EP1992949A1
公开(公告)日：2008-11-19
申请号：EP07738266.1
申请日：2007-03-12
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , TANAKA, Koichi , KAWAI, Makoto , TOBISAKA, Yuuji
IPC分类号： G01N33/53 , G01N37/00 , G01R29/24 , H01L21/02 , H01L27/12 , C12M1/00 , C12N15/09
CPC分类号： H01L21/76254 , H01L21/84
摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate (10) in which the ion-implanted layer (11) has been formed and the quartz substrate (20), and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion (13) of single-crystal silicon along the hydrogen ion-implanted layer (11), thereby obtaining an SOI substrate having an SOI layer (12) on the quartz substrate (20). A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate (20) of the SOI substrate thus obtained, so that processes required for a DNA chip or a micro fluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer (12).

3. 发明公开

EP1986219A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译： SOI-SUBSTRAT UND VERFAHREN ZUR HERSTELLUNG EINES SOI-SUBSTRATS
公开(公告)号：EP1986219A1
公开(公告)日：2008-10-29
申请号：EP07708229.5
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , TANAKA, Koichi , KAWAI, Makoto , TOBISAKA, Yuuji
IPC分类号： H01L21/02 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L21/76254 , H01L21/26533 , H01L29/78603
摘要： An oxide film (11) having a thickness "t ox " of not less than 0.2 µm is provided on the bonding surface of a single-crystal silicon substrate (10). In a method for manufacturing an SOI substrate according to the present invention, a low-temperature process is employed to suppress the occurrence of thermal strain attributable to a difference in the coefficient of thermal expansion between the silicon substrate (10) and a quartz substrate (20). To this end, the thickness "t ox " of the oxide film (11) is set to a large value of not less than 0.2 µm to provide sufficient mechanical strength to the thin film to be separated and, at the same time, to allow strain to be absorbed in and relaxed by the relatively thick oxide film to suppress the occurrence of transfer defects during the step of separation.
摘要翻译：在单晶硅基板（10）的接合面上设置厚度“t ox”为0.2μm以上的氧化膜（11）。在本发明的SOI基板的制造方法中，采用低温工艺来抑制由于硅基板（10）和石英基板（10）之间的热膨胀系数差异引起的热应变的发生 20）。为此，氧化膜（11）的厚度“t ox”被设定为不小于0.2μm的大值，以对要分离的薄膜提供足够的机械强度，并且同时允许应变被相对厚的氧化膜吸收和松弛，以抑制分离步骤期间的转印缺陷的发生。

4. 发明授权

EP1983553B8 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权转让
标题翻译：方法制造SOI衬底
公开(公告)号：EP1983553B8
公开(公告)日：2014-02-19
申请号：EP07713948.3
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/20 , H01L29/786 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate (32) having a smooth surface is placed on a hot plate (31) which constitutes a heating section, and the smooth surface of the heating plate (32) is closely adhered on the rear surface of a single-crystal Si substrate (10) bonded to a transparent insulating substrate (20). The temperature of the heating plate (32) is kept at 200°C or higher but not higher than 350°C. When the rear surface of the single-crystal Si substrate (10) bonded to the insulating substrate (20) is closely adhered on the heating plate (32), the single-crystal Si substrate (10) is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate (20). A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate (10), thus separation takes place at a hydrogen ion-implanted interface.

5. 发明授权

EP1986217B1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权转让
标题翻译：一种用于生产半导体衬底
公开(公告)号：EP1986217B1
公开(公告)日：2013-04-24
申请号：EP07708227.9
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/02 , C30B31/22 , C30B33/06 , H01L21/20 , H01L21/265
CPC分类号： H01L21/76254 , C30B33/04 , H01L21/265

6. 发明授权

EP1995788B1 METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：制造方法的光电转换元件的基板
公开(公告)号：EP1995788B1
公开(公告)日：2016-10-19
申请号：EP07738265.3
申请日：2007-03-12
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L31/04 , H01L21/02 , H01L21/20 , H01L21/205 , H01L31/0687
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521

7. 发明授权

EP2128891B1 PROCESS FOR PRODUCING LAMINATED SUBSTRATE 有权
标题翻译：用于生产层压基板
公开(公告)号：EP2128891B1
公开(公告)日：2015-09-02
申请号：EP07737557.4
申请日：2007-02-28
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , ITO, Atsuo , KUBOTA, Yoshihiro , TANAKA, Koichi , KAWAI, Makoto , TOBISAKA, Yuuji
IPC分类号： H01L21/02 , H01L27/12 , H01L21/762 , H01L31/18 , H01L21/3105
CPC分类号： H01L21/76254 , H01L21/31051 , H01L21/76251 , H01L31/1892 , Y02E10/50

8. 发明授权

EP1983553B1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权转让
标题翻译：方法制造SOI衬底
公开(公告)号：EP1983553B1
公开(公告)日：2013-11-06
申请号：EP07713948.3
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/20 , H01L29/786 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate (32) having a smooth surface is placed on a hot plate (31) which constitutes a heating section, and the smooth surface of the heating plate (32) is closely adhered on the rear surface of a single-crystal Si substrate (10) bonded to a transparent insulating substrate (20). The temperature of the heating plate (32) is kept at 200°C or higher but not higher than 350°C. When the rear surface of the single-crystal Si substrate (10) bonded to the insulating substrate (20) is closely adhered on the heating plate (32), the single-crystal Si substrate (10) is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate (20). A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate (10), thus separation takes place at a hydrogen ion-implanted interface.

9. 发明公开

EP1983553A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权转让
标题翻译：制造SOI衬底的方法
公开(公告)号：EP1983553A1
公开(公告)日：2008-10-22
申请号：EP07713948.3
申请日：2007-02-08
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , KAWAI, Makoto , TOBISAKA, Yuuji , TANAKA, Koichi
IPC分类号： H01L21/02 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate (32) having a smooth surface is placed on a hot plate (31) which constitutes a heating section, and the smooth surface of the heating plate (32) is closely adhered on the rear surface of a single-crystal Si substrate (10) bonded to a transparent insulating substrate (20). The temperature of the heating plate (32) is kept at 200°C or higher but not higher than 350°C. When the rear surface of the single-crystal Si substrate (10) bonded to the insulating substrate (20) is closely adhered on the heating plate (32), the single-crystal Si substrate (10) is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate (20). A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate (10), thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有平滑表面的加热板（32）放置在构成加热部分的加热板（31）上，并且加热板（32）的光滑表面紧密地粘附在单晶Si衬底的后表面上（10）结合到透明绝缘基板（20）。加热板（32）的温度保持在200℃或更高但不高于350℃。当与绝缘基板（20）接合的单晶硅基板（10）的背面紧贴在加热板（32）上时，单晶硅基板（10）通过热传导被加热，在单晶硅衬底和透明绝缘衬底（20）之间产生温差。由于单晶硅衬底（10）的快速膨胀，两衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

10. 发明授权

EP1992949B1 METHOD FOR MANUFACTURING SOI WAFER 有权
公开(公告)号：EP1992949B1
公开(公告)日：2018-09-19
申请号：EP07738266.1
申请日：2007-03-12
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： AKIYAMA, Shoji , KUBOTA, Yoshihiro , ITO, Atsuo , TANAKA, Koichi , KAWAI, Makoto , TOBISAKA, Yuuji
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/84
摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate (10) in which the ion-implanted layer (11) has been formed and the quartz substrate (20), and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion (13) of single-crystal silicon along the hydrogen ion-implanted layer (11), thereby obtaining an SOI substrate having an SOI layer (12) on the quartz substrate (20). A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate (20) of the SOI substrate thus obtained, so that processes required for a DNA chip or a micro fluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer (12).

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