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1. 发明授权

EP2782147B1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
公开(公告)号：EP2782147B1
公开(公告)日：2020-03-11
申请号：EP13819520.1
申请日：2013-07-18
申请人： Semicon Light Co., Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/46 , H01L33/38

2. 发明公开

EP2782149A2 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
标题翻译： LICHTEMITTITRENDEND HALBLEITERELEMENT
公开(公告)号：EP2782149A2
公开(公告)日：2014-09-24
申请号：EP13819478.2
申请日：2013-07-18
申请人： Semicon Light Co. Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/46 , H01L33/36
CPC分类号： H01L33/10 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/504 , H01L2224/14 , H01L2933/0025
摘要： The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.
摘要翻译：本公开涉及一种半导体发光器件，包括：多个半导体层，其在生长衬底上顺序生长，多个半导体层包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层与第一导电率不同的有源层和介于第一半导体层和第二半导体层之间的有源层，经由电子 - 空穴复合产生具有第一波长的光; 第一电极，向多个半导体层提供电子或空穴; 第二电极，如果由第一电极提供空穴，则向多个半导体层提供电子，或者如果电子由第一电极供应，则提供空穴; 设置在生长衬底侧的第一半导体层上的荧光体部分，将在有源层中产生的第一波长的光转换为第二波长的光; 以及形成在第二半导体层上的用于将来自有源层的光朝向生长衬底侧的第一半导体层反射的非导电反射膜，其中非导电反射膜具有基于由荧光体部分转换的光。

3. 发明授权

EP2782148B1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权转让
公开(公告)号：EP2782148B1
公开(公告)日：2020-05-06
申请号：EP13819369.3
申请日：2013-07-18
申请人： Semicon Light Co., Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/38 , H01L33/46 , H01L33/20 , H01L33/44

4. 发明公开

EP2782148A2 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
标题翻译：半导体发光元件
公开(公告)号：EP2782148A2
公开(公告)日：2014-09-24
申请号：EP13819369.3
申请日：2013-07-18
申请人： Semicon Light Co. Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/46 , H01L33/36 , H01L33/10
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/44
摘要： The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.
摘要翻译：本发明涉及一种半导体发光器件，包括：多个半导体层，包括具有第一导电性的第一半导体层，具有与第一导电性不同的第二导电性的第二半导体层以及插入第一半导体层和第二半导体层，通过电子 - 空穴复合产生光; 向所述多个半导体层供应电子或空穴的第一电极; 第二电极，如果所述空穴由所述第一电极供给，则向所述多个半导体层供给电子，或者如果所述电子由所述第一电极供给，则向所述多个半导体层供给空穴; 耦合到所述多个半导体层的非导电分布式布拉格反射器，反射来自所述有源层的光; 以及第一透光膜，所述第一透光膜相对于所述非导电分布式布拉格反射器从与所述多个半导体层相反的一侧耦合到所述分布式布拉格反射器，其中所述第一透光膜的折射率低于有效折射率分布式布拉格反射器的索引。

5. 发明公开

EP2782147A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERELEMENTS
公开(公告)号：EP2782147A1
公开(公告)日：2014-09-24
申请号：EP13819520.1
申请日：2013-07-18
申请人： Semicon Light Co. Ltd.
发明人： JEON, Soo Kun , PARK, Eun Hyun , KIM, Yong Deok
IPC分类号： H01L33/36 , H01L33/46
CPC分类号： H01L33/005 , H01L33/007 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/16245 , H01L2933/0025 , H01L2933/0058
摘要： The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: forming a finger electrode in electrical communication with a second semiconductor layer; forming, on the finger electrode, a non-conductive reflective layer made up of a multi-layer dielectric film, for reflecting light from the active layer towards a first semiconductor layer on the side of a growth substrate, with the non-conductive reflective layer including a bottom layer formed by chemical vapor deposition and at least two layers formed by physical vapor deposition; and forming an electrical connection, passing through the non-conductive reflective film and being connected the finger electrode.
摘要翻译：本公开涉及一种制造半导体发光器件的方法，包括：形成与第二半导体层电连通的指状电极; 在指状电极上形成由多层电介质膜构成的非导电反射层，用于将来自有源层的光朝向生长衬底侧的第一半导体层反射，其中非导电反射层包括通过化学气相沉积形成的底层和通过物理气相沉积形成的至少两层; 并形成电连接，穿过非导电反射膜并连接指状电极。

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