专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP0365244B1 An active matrix substrate 失效
标题翻译：具有的有源矩阵基板。
公开(公告)号：EP0365244B1
公开(公告)日：1995-06-21
申请号：EP89310569.2
申请日：1989-10-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Kanemori, Yuzuru , Negoto, Hidenori , Katayama, Mikio , Inui, Motokazu , Yano, Kouzou , Tanaka, Hirohisa , Morimoto, Hiroshi
IPC分类号： G02F1/136 , H01L27/12
CPC分类号： H01L27/12 , G02F1/13624 , G02F2001/134345 , G02F2001/136268

2. 发明公开

EP0498663A2 Method for producing a semi conductor device using sputtering 失效
标题翻译： Verfahren zur Herstellung einer Halbleitervorrichtung durch Sputrant。
公开(公告)号：EP0498663A2
公开(公告)日：1992-08-12
申请号：EP92301042.5
申请日：1992-02-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Shimada, Yasunori , Morimoto, Hiroshi
IPC分类号： C23C14/34 , H01L21/285
CPC分类号： H01L29/66765 , H01L21/28079 , H01L21/2855
摘要： A method for producing a semiconductor device for forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m·Pa to 0.08 m·Pa.
摘要翻译：提供了通过溅射形成钽薄膜来制造用于形成电极或电极布线的半导体器件的方法。在该方法中，将作为反应性气体混合有氮的氪气用作溅射气体，将溅射气体的压力与目标基板间距离的乘积设定为0.01mPa·s〜 0.08 m.Pa.

3. 发明公开

EP0347117A3 An active-matrix display device 失效
标题翻译：主动矩阵显示装置
公开(公告)号：EP0347117A3
公开(公告)日：1990-09-12
申请号：EP89305842.0
申请日：1989-06-09
申请人： SHARP KABUSHIKI KAISHA
发明人： Katayama, Mikio , Adachi, Masahiro , Tanaka, Hirohisa , Morimoto, Hiroshi
IPC分类号： G02F1/133
CPC分类号： G02F1/1368 , G02F1/136213 , G02F2202/103
摘要： An active-matrix display device comprising a plurality of picture elements (4) that are arranged into a matrix and thin-film transistors (6) that switch the picture elements, an MIS-structured diode (5) and each of the picture elements (4) being connected with the thin-film transistors in parallel.

4. 发明公开

EP0365244A2 An active matrix substrate 失效
标题翻译： Substrat mit einer aktiven Matrix。
公开(公告)号：EP0365244A2
公开(公告)日：1990-04-25
申请号：EP89310569.2
申请日：1989-10-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Kanemori, Yuzuru , Negoto, Hidenori , Katayama, Mikio , Inui, Motokazu , Yano, Kouzou , Tanaka, Hirohisa , Morimoto, Hiroshi
IPC分类号： G02F1/136 , H01L27/12
CPC分类号： H01L27/12 , G02F1/13624 , G02F2001/134345 , G02F2001/136268
摘要： An active matrix substrate has pixel electrodes (2) arranged in a matrix form on an insulating substrate, scanning lines (3) disposed between the rows of the pixel electrodes arrayed in one direction, signal lines (4) disposed intersecting the scanning lines, first switching devices (5) each disposed adjacent to one side of each of the pixel electrodes, and second switching devices (6) each disposed adjacent to a different side thereof from the side adjacent to which the first switching devices each are disposed, only the first switching devices (5) out of the first and second switching devices being each electrically connected to the adjacent pixel electrode (2), thereby attaining pixel defect correction with ease.
摘要翻译：有源矩阵基板具有以矩阵形式布置在绝缘基板上的像素电极（2），设置在沿一个方向排列的像素电极行之间的扫描线（3），与扫描线相交的信号线（4），第一开关装置（5），每个与每个像素电极的一侧相邻设置;以及第二开关装置（6），每个第二开关装置（6）相邻于与其各自设置有第一开关装置的一侧相邻的不同侧，仅第一开关装置第一和第二开关装置中的开关装置（5）各自电连接到相邻的像素电极（2），从而容易地获得像素缺陷校正。

5. 发明公开

EP0271313A2 Liquid crystal display device 失效
标题翻译： Flüssigkristallanzeigevorrichtung。
公开(公告)号：EP0271313A2
公开(公告)日：1988-06-15
申请号：EP87310767.6
申请日：1987-12-08
申请人： SHARP KABUSHIKI KAISHA
发明人： Katayama, Mikio , Tanaka, Hirohisa , Shimada, Yasunori , Morimoto, Hiroshi
IPC分类号： G02F1/133
CPC分类号： G02F1/136209
摘要： An active-matrix display device comprising an insulating substrate (1) as a display panel on which a plurality of thin-film transistors (7) and a plurality of picture-element transparent electrodes (5) are disposed in a matrix, wherein a black striped film (55) is disposed between each thin-film transistor (7) and the insulating substrate (1) in such a manner that it covers the entire area except for the picture-element transparent electrodes (5).
摘要翻译：一种有源矩阵显示装置，包括绝缘基板（1）作为显示面板，多个薄膜晶体管（7）和多个像素透明电极（5）以矩阵形式布置在其上，其中黑色以薄膜晶体管（7）和绝缘基板（1）之间的方式覆盖除了图像元素透明电极（5）以外的整个区域的条形薄膜（55）。

6. 发明授权

EP0493113B1 A method for producing a thin film transistor and an active matrix substrate for liquid crystal display devices 失效
标题翻译：一种制造薄膜晶体管的方法和用于液晶显示组件的有源矩阵基板
公开(公告)号：EP0493113B1
公开(公告)日：1997-03-19
申请号：EP91312014.3
申请日：1991-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Mitani, Yasuhiro , Ikubo, Katsumasa , Shimada, Yasunori , Tanaka, Hirohisa , Morimoto, Hiroshi , Nishi, Yutaka , Yamamoto, Tomohiko , Nishimura, Kenichi
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78666 , H01L29/78669 , H01L29/78675

7. 发明授权

EP0498663B1 Method for producing a semi conductor device using sputtering 失效
标题翻译：一种用于通过溅射制造半导体器件的工艺
公开(公告)号：EP0498663B1
公开(公告)日：1995-12-13
申请号：EP92301042.5
申请日：1992-02-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Shimada, Yasunori , Morimoto, Hiroshi
IPC分类号： C23C14/34 , H01L21/285
CPC分类号： H01L29/66765 , H01L21/28079 , H01L21/2855

8. 发明公开

EP0580445A3 A switching element array and a liquid crystal display using the same 失效
标题翻译：开关元件阵列和使用其的液晶显示器
公开(公告)号：EP0580445A3
公开(公告)日：1994-08-24
申请号：EP93305821.6
申请日：1993-07-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Shimada, Yasunori , Morimoto, Hiroshi , Koden, Mitsuhiro , Yamamoto, Tomohiko , Kojima, Yoshimi , Yoshida, Masaru
IPC分类号： G02F1/136 , H01L45/00
CPC分类号： G02F1/1365
摘要： In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes (2) are arranged in parallel on the first insulating substrate (1) in a first direction, and a first insulating layer (3) is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer (4) is formed on the first insulating layer, and a second insulating layer (5) is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes (8) are arranged in parallel on the second insulating substrate (7) in a second direction crossing the first direction. Thus, the switching element array (11) sandwiched between the first and second electrodes is used for driving the liquid crystal layer (10).

9. 发明公开

EP0580445A2 A switching element array and a liquid crystal display using the same 失效
标题翻译： Schaltelemente-Matrix和Flüssigkristall-Anzeigevorrichtung die diese benutzt。
公开(公告)号：EP0580445A2
公开(公告)日：1994-01-26
申请号：EP93305821.6
申请日：1993-07-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Shimada, Yasunori , Morimoto, Hiroshi , Koden, Mitsuhiro , Yamamoto, Tomohiko , Kojima, Yoshimi , Yoshida, Masaru
IPC分类号： G02F1/136 , H01L45/00
CPC分类号： G02F1/1365
摘要： In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes (2) are arranged in parallel on the first insulating substrate (1) in a first direction, and a first insulating layer (3) is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer (4) is formed on the first insulating layer, and a second insulating layer (5) is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes (8) are arranged in parallel on the second insulating substrate (7) in a second direction crossing the first direction. Thus, the switching element array (11) sandwiched between the first and second electrodes is used for driving the liquid crystal layer (10).
摘要翻译：在液晶显示器中，液晶层设置在第一绝缘基板和第二绝缘基板之间。多个第一电极在第一绝缘基板上沿第一方向平行布置，第一绝缘层形成在第一绝缘基板的整个表面上并覆盖第一电极。半导体层形成在第一绝缘层上，并且在其上形成第二绝缘层并覆盖第一绝缘基板的整个表面。这种三层结构构成开关元件阵列。多个第二电极在与第一方向交叉的第二方向上平行布置在第二绝缘电极上。因此，夹在第一和第二电极之间的开关元件阵列用于驱动液晶层。

10. 发明公开

EP0519692A2 Thin film transistor and method for manufacturing the same 失效
标题翻译： Dünnfilmtransistor和Verfahren zu dessen Herstellung。
公开(公告)号：EP0519692A2
公开(公告)日：1992-12-23
申请号：EP92305529.7
申请日：1992-06-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Mitani, Yasuhiro , Ikubo, Katsumasa , Tanaka, Hirohisa , Morimoto, Hiroshi
IPC分类号： H01L21/84 , H01L21/336 , H01L29/784
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/66765 , H01L29/78618 , H01L29/78666 , H01L29/78669 , H01L29/78675
摘要： A thin film transistor comprising: a gate electrode (2) formed on a substrate (1); a gate insulating film (3) covering said gate electrode; a semiconductor layer (4) forming a channel region on said gate insulating film;
a channel protective layer (5) formed on the semiconductor layer in the vicinity of the center thereof; and
a drain electrode (8) and a source electrode (7) extending in the right and left directions along said semiconductor layer surface from the right and left sides of said channel protective layer, respectively,
wherein said channel protective layer has inclined right and left side surfaces, and the semiconductor layer is in contact with said source and drain electrodes and is doped with an impurity just under the foot of the inclined side surfaces of said channel protective layer in order to prevent a leak and to provide ohmic contact and preparation method.
摘要翻译：一种薄膜晶体管，包括：形成在基板上的栅电极; 覆盖所述栅电极的栅极绝缘膜; 在所述栅绝缘膜上形成沟道区的半导体层; 在半导体层的中心附近形成的沟道保护层; 以及分别从所述沟道保护层的左右两侧沿着所述半导体层表面沿左右方向延伸的漏电极和源电极，其中所述沟道保护层具有倾斜的左右侧表面，并且所述半导体层与所述源极和漏极接触，并且在所述沟道保护层的倾斜侧表面的正下方掺杂杂质，以防止泄漏并提供欧姆接触和制备方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式