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1. 发明公开

EP1035757A4 SUBSTRATE ELECTRODE PLASMA GENERATOR AND SUBSTANCE/MATERIAL PROCESSING METHOD 有权
标题翻译：巴伐利亚麻醉品麻醉品基础设施VERFAHREN ZUR BEHANDLUNG VON STOFFEN / MATERIALEN
公开(公告)号：EP1035757A4
公开(公告)日：2005-02-02
申请号：EP99944818
申请日：1999-09-24
申请人： SEIKO EPSON CORP , TERASHIMA KAZUO
发明人： TERASHIMA KAZUO , SEKI SHUNICHI , SHIMODA TATSUYA , IZAKI TAKESHI
IPC分类号： B29C59/14 , C23C14/18 , C23C16/50 , C23F4/00 , H05H1/24 , H05H1/46 , H01J37/32 , H01L21/3065
CPC分类号： C23C14/185 , H05H1/48
摘要： A substrate electrode plasma generator comprising an array of a pair of fine-gap, thin-film electrodes (1, 2, 4) formed by sputter-depositing tungsten on a surface-oxidized silicon substrate (5) followed by dry etching.
摘要翻译：基板电极等离子体生成装置由通过在具有氧化表面的硅基板5上溅射和干蚀刻钨而形成的小间隙薄膜电极对1,2,3和4的阵列构成。

2. 发明公开

EP1087428A4 METHOD FOR FORMING A SILICON FILM AND INK COMPOSITION FOR INK JET 有权
标题翻译：制造用于喷墨硅层，油墨成分
公开(公告)号：EP1087428A4
公开(公告)日：2005-07-27
申请号：EP00912945
申请日：2000-03-29
申请人： SEIKO EPSON CORP , JSR CORP
发明人： SEKI SHUNICHI , SHIMODA TATSUYA , MIYASHITA SATORU , FURUSAWA MASAHIRO , YUDASAKA ICHIO , MATSUKI YASUO , TAKEUCHI YASUMASA
IPC分类号： C23C18/06 , C23C18/08 , C23C18/12 , H01L21/208 , H01L21/336 , H01L31/18 , H01L51/00 , H01L51/40 , C01B33/02
CPC分类号： C23C18/06 , C08G77/60 , C09D183/16 , C23C18/08 , H01L21/0242 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02636 , H01L29/6675 , H01L51/0005 , Y02P20/582
摘要： A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.
摘要翻译：含有硅前体的油墨组合物11被选择性地放电到预定区域上的衬底从喷墨头12，以形成硅前体的图案，并且经受一个热和/或光处理以将硅前体转化成在非晶硅膜-15或多晶硅膜16的有机硅膜图案以低成本且低能量由此获得在大面积上。

3. 发明公开

EP1085560A4 METHOD FOR FORMING SILICON FILM 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SILIZIUMSCHICHT
公开(公告)号：EP1085560A4
公开(公告)日：2005-07-27
申请号：EP00912946
申请日：2000-03-29
申请人： SEIKO EPSON CORP , JSR CORP
发明人： SHIMODA TATSUYA , MIYASHITA SATORU , SEKI SHUNICHI , FURUSAWA MASAHIRO , YUDASAKA ICHIO , TAKEUCHI YASUMASA , MATSUKI YASUO
IPC分类号： C30B7/00 , H01L21/208 , C01B33/02
CPC分类号： H01L21/0242 , C30B7/00 , C30B7/005 , C30B29/06 , H01L21/0237 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/02628 , H01L21/02675
摘要： A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.
摘要翻译：将含有不含碳的环状硅烷化合物和/或通过硼或磷改性的硅烷化合物的溶液施加到基板上，形成硅前体膜，然后通过加热将膜转变成半导体硅， /或轻度处理。因此，与CVD方法中的真空处理不同，可以以低成本容易地制造具有作为电子材料的令人满意的特性的硅膜。

4. 发明公开

EP1011298A4 SUBSTRATE FOR FORMATION OF SPECIAL PATTERN, AND METHOD OF MANUFACTURE OF SUBSTRATE 有权
标题翻译：衬底的教育特殊模式，及其制造方法衬底
公开(公告)号：EP1011298A4
公开(公告)日：2003-08-27
申请号：EP99919593
申请日：1999-05-14
申请人： SEIKO EPSON CORP
发明人： KANBE SADAO , SEKI SHUNICHI , FUKUSHIMA HITOSHI , KIGUCHI HIROSHI
IPC分类号： B05D1/32 , B41M3/00 , C23C26/00 , H05K1/02 , H05K3/10 , H05K3/18 , H05K3/38 , B05D1/18 , B05D3/06 , B05D3/14
CPC分类号： B41M3/006 , H05K3/185 , Y10T428/24802 , Y10T428/31663
摘要： A substrate on which predetermined liquid is applied to form a patterned layer. Especially, this substrate includes a region (10) for formation of a pattern with a specific shape. On the region (10), regions (110) having an affinity for the liquid are arranged between regions (111) having no affinity for the liquid according to a predetermined rule. This allows the liquid to spread uniformly to form a uniform thin layer while keeping it from running too far or losing continuity.

5. 发明公开

EP1083775A4 COMPOSITION, METHOD FOR PREPARING FILM, AND FUNCTIONAL ELEMENT AND METHOD FOR PREPARING THE SAME 有权
标题翻译： ZUSAMMENSETZUNG，VERFAHREN ZUR HERSTELLUNG EINES FILMS，FUNKISELLES ELEMENT UND DESSEN HERSTELLUNG
公开(公告)号：EP1083775A4
公开(公告)日：2005-12-07
申请号：EP00912924
申请日：2000-03-29
申请人： SEIKO EPSON CORP , CAMBRIDGE DISPLAY TECH
发明人： KANBE SADAO , SEKI SHUNICHI
IPC分类号： C09D11/00 , C09D11/322 , C09D11/328 , H01L27/32 , H01L51/00 , H01L51/30 , H01L51/40 , H01L51/50
CPC分类号： H01L51/0043 , C09K11/06 , H01L27/32 , H01L51/0005 , H01L51/0007 , H01L51/0036 , H01L51/0039 , H01L51/0053 , H01L51/0059 , H01L51/5012
摘要： A composition, which can be used in an ink jet printing method, can use either a non-polar or a weakly polar material as a functional material, prevents clogging at dispensing time, achieves stable dispensing, and prevents precipitation of content matter during dispensing and phase separation during film formation, a uniform, homogenous functional film formed using this composition and a manufacturing method therefor, as well as an organic EL device or other such display device and a manufacturing method therefor. A composition of the present invention consists of a functional material, and a solvent comprising at least one benzene derivative, which has one or more substituents, and these substituents have 3 or more carbon atoms in total. A functional film of the present invention is formed using the above-mentioned composition. A display device of the present invention comprises luminescent material layers formed using the above-mentioned composition between two electrodes. The above-mentioned display device is an organic EL device or the like.
摘要翻译：可以以喷墨打印方法使用的组合物可以使用非极性或弱极性材料作为功能材料，防止分配时的堵塞，实现稳定的分配，并防止在分配期间内容物的沉淀，以及成膜期间的相分离，使用该组合物形成的均匀的均匀功能膜及其制造方法以及有机EL器件等显示装置及其制造方法。本发明的组合物由功能材料和包含至少一种具有一个或多个取代基的苯衍生物的溶剂组成，并且这些取代基总共具有3个或更多个碳原子。使用上述组成形成本发明的功能性膜。本发明的显示装置包括使用上述组成在两个电极之间形成的发光材料层。上述显示装置是有机EL装置等。

6. 发明公开

EP2980294A4 SHEET-MANUFACTURING DEVICE AND METHOD FOR CONTROLLING SHEET-MANUFACTURING DEVICE 有权
标题翻译：铁路生产设备和方法，用于控制铁路制造装置
公开(公告)号：EP2980294A4
公开(公告)日：2016-11-09
申请号：EP14772878
申请日：2014-03-18
申请人： SEIKO EPSON CORP
发明人： OGUCHI YUKI , SEKI SHUNICHI
IPC分类号： D04H1/732 , D21B1/08 , D21H11/14
CPC分类号： D21F1/48 , D04H1/732 , D21B1/06 , D21B1/063 , D21F11/00 , D21H11/14
摘要： A sheet-manufacturing device that manufactures a sheet of which the quality is stable, by controlling airflow to be constant and causing a fibrillation state to be constant. A sheet-manufacturing device including a fibrillating portion that generates fibrillated products by fibrillating products to be fibrillated; a temperature acquiring portion that acquires a temperature of the fibrillating portion; and a control portion that changes a mass flow rate of the air including the fibrillated products transported from the fibrillating portion.

7. 发明公开

EP1085578A4 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR 有权
标题翻译：用于生产薄膜场效应晶体管
公开(公告)号：EP1085578A4
公开(公告)日：2005-07-27
申请号：EP00912944
申请日：2000-03-29
申请人： SEIKO EPSON CORP
发明人： YUDASAKA ICHIO , SHIMODA TATSUYA , SEKI SHUNICHI
IPC分类号： G02F1/1368 , H01L21/208 , H01L21/288 , H01L21/316 , H01L21/336 , H01L29/12 , C01G9/00 , C01G45/00 , C01G51/00
CPC分类号： H01L29/66765 , G02F1/1368 , H01L21/02422 , H01L21/02532 , H01L21/02628 , H01L21/288 , H01L21/316 , H01L27/1292 , H01L29/66757
摘要： All or part of thin film, such as silicon film, insulating film and a conducting film, which composes a thin-film transistor are formed using liquid materials. Coating of liquid material on a substrate is heat-treated to form desired thin film. This method allows use of low-cost equipment, thus reducing the manufacturing costs of thin-film transistors.

8. 发明公开

EP1113502A4 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR 有权
标题翻译：方法操作部门的薄膜场效应晶体管
公开(公告)号：EP1113502A4
公开(公告)日：2004-09-22
申请号：EP00912943
申请日：2000-03-29
申请人： SEIKO EPSON CORP
发明人： YUDASAKA ICHIO , SHIMODA TATSUYA , SEKI SHUNICHI
IPC分类号： H01L21/208 , H01L21/312 , H01L21/316 , H01L21/336 , H01L29/786 , G02F1/1368 , H01L21/288
CPC分类号： H01L29/66757 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02422 , H01L21/02532 , H01L21/02628 , H01L21/3124 , H01L21/31695
摘要： All or part of thin film, such as silicon film, insulating film and a conducting film, which composes a thin-film transistor are formed using liquid materials. Coating of liquid material on a substrate is heat-treated to form desired thin film.

9. 发明公开

EP0982974A4 METHOD OF PRODUCING ORGANIC EL ELEMENT AND ORGANIC EL ELEMENT 有权
标题翻译：制造方法有机电致发光元件及有机EL元件
公开(公告)号：EP0982974A4
公开(公告)日：2003-01-22
申请号：EP98941685
申请日：1998-09-02
申请人： SEIKO EPSON CORP
发明人： SEKI SHUNICHI , KIGUCHI HIROSHI
IPC分类号： H01L27/32 , H01L51/00 , H01L51/30 , H01L51/40 , H01L51/50 , H05B33/10 , C08K5/05 , C08L101/00 , H05B33/22
CPC分类号： H05B33/10 , H01L27/3241 , H01L27/3295 , H01L51/0005 , H01L51/0037 , H01L51/0078 , H01L51/5012
摘要： A composition for a hole injection/transportation layer is used for forming by patterning a hole injection/transportation layer of an organic EL element by using an ink-jet recording head, and contains an electrically conducting compound which is a component of the hole injection/transportation layer and a solvent, has a contact angle of from 30 DEG to 170 DEG relative to the material constituting the ink-jet nozzle surface of the ink-jet recording head, has a viscosity of from 1 cp to 20 cp and a surface tension of from 20 dyne to 70 dyne. Owing to such physical properties, the material and element can be designed in an optimum manner. The composition for the hole injection/transportation layer makes it possible to pattern-form a high-precision film easily, whithin short periods of time and at a low cost.

10. 发明公开

EP1085579A4 METHOD OF MANUFACTURING SOLAR CELL 有权
标题翻译：方法太阳能电池
公开(公告)号：EP1085579A4
公开(公告)日：2001-12-12
申请号：EP00912947
申请日：2000-03-29
申请人： SEIKO EPSON CORP , JSR CORP
发明人： FURUSAWA MASAHIRO , SEKI SHUNICHI , MIYASHITA SATORU , SHIMODA TATSUYA , YUDASAKA ICHIO , MATSUKI YASUO , TAKEUCHI YASUMASA
IPC分类号： H01L27/142 , H01L31/075 , H01L31/18 , H01L31/20 , H01L31/042 , H01L21/208
CPC分类号： H01L31/202 , H01L31/046 , H01L31/077 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A solar cell has a structure comprising a pair of electrodes between which are interposed at least two thin layers of semiconductor containing different types and/or concentrations of impurity. A process of producing the thin semiconductor layers comprises applying a silicide-containing liquid composition to a substrate to form a coating, and converting the coating to a silicon layer by heat treatment and/or photochemical processing.

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