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1. 发明公开

EP2524403A1 MAGNETIC TUNNEL JUNCTION ON PLANARIZED ELECTRODE 有权
标题翻译：形成一个磁隧道转移在平坦化电极
公开(公告)号：EP2524403A1
公开(公告)日：2012-11-21
申请号：EP11702311.9
申请日：2011-01-14
申请人： Qualcomm Incorporated
发明人： KANG, Seung, H. , LI, Xia , CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun , HSU, Wah Nam
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers (126) are deposited on a bottom electrode (124) and are aligned with the bottom metal (122). An etch stop layer (302) may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer (202) may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

2. 发明公开

EP3127174A1 REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUNCTION (MTJ) ETCH 审中-公开
标题翻译： ERSATZ EINER LEITENDEN HARTMASKEFÜRMEHRSTUFIGESMAGNETTUNNELÜBERGANGSÄTZEN
公开(公告)号：EP3127174A1
公开(公告)日：2017-02-08
申请号：EP15711636.9
申请日：2015-03-16
申请人： Qualcomm Incorporated
发明人： LU, Yu , PARK, Chando , CHEN, Wei-Chuan
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08
摘要： A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask.
摘要翻译：用于制造磁隧道结（MTJ）装置的多步骤蚀刻技术包括在第一蚀刻步骤中在MTJ装置的第一电极上形成第一导电硬掩模以蚀刻第一电极。该方法还包括在第一导电硬掩模上形成第二导电硬掩模，用于在第二蚀刻步骤期间蚀刻MTJ装置的磁性层。间隔层共形沉积在第一导电硬掩模的侧壁上。第二导电硬掩模沉积在第一导电硬掩模上并与第一导电硬掩模的侧壁上的间隔层对准。

3. 发明授权

EP2878017B1 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES 有权
标题翻译：非晶合金 - 垂直磁性隧道过渡元素HOLDER
公开(公告)号：EP2878017B1
公开(公告)日：2016-08-24
申请号：EP13747577.8
申请日：2013-07-26
申请人： Qualcomm Incorporated
发明人： LEE, Kangho , CHEN, Wei-Chuan , KANG, Seung H.
IPC分类号： H01L43/08 , G11C11/15 , H01L43/12
CPC分类号： H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12

4. 发明公开

EP2553742A1 MAGNETIC TUNNEL JUNCTION STORAGE ELEMENT AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁隧道连接存储元件及其制造方法
公开(公告)号：EP2553742A1
公开(公告)日：2013-02-06
申请号：EP11712737.3
申请日：2011-03-25
申请人： Qualcomm Incorporated
发明人： CHEN, Wei-Chuan , KANG, Seung H.
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Methods for forming a magnetic tunnel junction (MTJ) storage element and MTJ storage elements formed are disclosed. The MTJ storage element includes a MTJ stack having a pinned layer stack, a barrier layer and a free layer. An adjusting layer is formed on the free layer, such that the free layer is protected from process related damages. A top electrode is formed on the adjusting layer and the adjusting layer and the free layer are etched utilizing the top electrode as a mask. A spacer layer is then formed, encapsulating the top electrode, the adjusting layer and the free layer. The spacer layer and the remaining portions of the MTJ stack are etched. A protective covering layer is deposited over the spacer layer and the MTJ stack. In particular, the adjusting layer protects the free layer from oxygen ashing during photoresist removal process.
摘要翻译：公开了形成磁隧道结（MTJ）存储元件和MTJ存储元件的方法。 MTJ存储元件包括具有钉扎层堆叠，阻挡层和自由层的MTJ堆叠。在自由层上形成调整层，从而保护自由层免受与过程有关的损害。在调整层上形成顶部电极，利用顶部电极作为掩模对调整层和自由层进行蚀刻。然后形成间隔层，封装顶部电极，调节层和自由层。间隔层和MTJ堆栈的其余部分被蚀刻。在间隔层和MTJ堆叠上沉积保护覆盖层。特别地，调节层在光刻胶去除过程中保护自由层免受氧灰化。

5. 发明授权

EP3002757B1 THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPHY COUPLED ELEMENTS FOR SPIN-TRANSFER TORQUE SWITCHING DEVICE 有权
公开(公告)号：EP3002757B1
公开(公告)日：2019-02-20
申请号：EP15194572.2
申请日：2012-09-22
申请人： Qualcomm Incorporated
发明人： CHEN, Wei-Chuan , LEE, Kangho , ZHU, Xiaochun
IPC分类号： G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12

6. 发明授权

EP2676274B1 METHODS OF INTEGRATED SHIELDING INTO MTJ DEVICE FOR MRAM 有权
公开(公告)号：EP2676274B1
公开(公告)日：2018-08-15
申请号：EP12713807.1
申请日：2012-02-14
申请人： Qualcomm Incorporated
发明人： CHEN, Wei-Chuan , LI, Xia , KANG, Seung H.
IPC分类号： H01L23/552 , H01L43/02 , H01L27/11502 , H01L27/11507 , H01L43/08 , H01L43/12 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , H01L23/552 , H01L27/11502 , H01L27/11507 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.

7. 发明公开

EP3170178A1 SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL 有权
标题翻译：磁性随机存取存储器（MRAM）单元的开关薄膜结构
公开(公告)号：EP3170178A1
公开(公告)日：2017-05-24
申请号：EP15727800.3
申请日：2015-05-22
申请人： Qualcomm Incorporated
发明人： LI, Xia , CHEN, Wei-Chuan , LU, Yu , LEE, Kangho , KANG, Seung Hyuk
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2213/73 , H01L27/228 , H01L43/08
摘要： An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
摘要翻译： MRAM单元可以包括磁性隧道结（MTJ）。 MTJ包括引脚层，阻挡层，自由层和封盖层。 MRAM单元进一步包括直接耦合到MTJ的电极的双向二极管选择器，以允许访问MTJ。

8. 发明公开

EP2878017A1 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJS 有权
标题翻译：非晶合金 - 垂直磁性隧道过渡元素HOLDER
公开(公告)号：EP2878017A1
公开(公告)日：2015-06-03
申请号：EP13747577.8
申请日：2013-07-26
申请人： Qualcomm Incorporated
发明人： LEE, Kangho , CHEN, Wei-Chuan , KANG, Seung H.
IPC分类号： H01L43/08 , G11C11/15
CPC分类号： H01L43/10 , G11C11/15 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.

9. 发明公开

EP3132446A1 SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT FORMED FROM FERRIMAGNETIC RARE-EARTH-TRANSITION-METAL (RE-TM) ALLOYS 审中-公开
标题翻译： AUS FERRIMAGNETISCHEN SELTENERD-ÜBERGANGSMETALL（RE-TM） - LEGIERUNGEN GEFORMTE MAGNETISCHESSPINÜBERTRAGUNGSSCHALTELEMENT
公开(公告)号：EP3132446A1
公开(公告)日：2017-02-22
申请号：EP15709598.5
申请日：2015-03-02
申请人： Qualcomm Incorporated
发明人： CHEN, Wei-Chuan , ZHU, Xiaochun , PARK, Chando , KANG, Seung Hyuk
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero.
摘要翻译：磁性隧道结（MTJ）包括由铁氧体稀土 - 过渡金属（RE-TM）合金形成的自由层，其具有由RE-稀土 - 过渡金属（RE-TM）合金的稀土（RE）组成的亚晶格矩主导的净时刻， TM合金。 MTJ还包括由稀土 - 过渡金属（RE-TM）合金形成的钉扎层，其具有以RE-TM合金的稀土（RE）组成的亚晶格矩为主的净矩，被钉扎层包括一个或多个非晶薄插入层，使得自由层和钉扎层的净磁矩低或接近于零。

10. 发明公开

EP3127121A1 ANTI-FUSE ONE-TIME PROGRAMMABLE RESISTIVE RANDOM ACCESS MEMORIES 审中-公开
标题翻译： EINMAL PROGRAMMERBARERANTISCHMELZSICHERUNGSBESTÄNDIGERDIREKTZUGRIFFSPEICHER
公开(公告)号：EP3127121A1
公开(公告)日：2017-02-08
申请号：EP15711619.5
申请日：2015-03-06
申请人： Qualcomm Incorporated
发明人： LI, Xia , CHEN, Wei-Chuan , KANG, Seung Hyuk , LEE, Kangho
IPC分类号： G11C13/00 , G11C17/16 , G11C11/56 , G11C11/00
CPC分类号： G11C17/18 , G11C11/005 , G11C11/5614 , G11C11/5685 , G11C11/5692 , G11C13/0002 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C17/165 , G11C2013/0042
摘要： An anti-fuse device includes a first electrode, an insulator on the first electrode, a second electrode on the insulator, and selector logic coupled to the second electrode. The device also includes a conductive path between the first and second electrodes. The conductive path may be configured to provide a hard breakdown for one-time programmable non-volatile data storage.
摘要翻译：反熔丝器件包括第一电极，第一电极上的绝缘体，绝缘体上的第二电极和耦合到第二电极的选择器逻辑。该装置还包括在第一和第二电极之间的导电路径。导电路径可以被配置为提供用于一次性可编程非易失性数据存储的硬击穿。

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