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1. 发明公开

EP3973576A1 AN ENHANCEMENT MODE METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR 审中-公开
公开(公告)号：EP3973576A1
公开(公告)日：2022-03-30
申请号：EP19730068.4
申请日：2019-05-23
申请人： Power Integrations, Inc.
发明人： RAMDANI, Jamal
IPC分类号： H01L29/778 , H01L29/51 , H01L23/29 , H01L29/423 , H01L29/20

2. 发明公开

EP3131122A1 INTEGRATED HIGH PERFORMANCE LATERAL SCHOTTKY DIODE 审中-公开
标题翻译： INTEGRIERTE LATERALE SCHOTTKY-HOCHLEISTUNGSDIODE
公开(公告)号：EP3131122A1
公开(公告)日：2017-02-15
申请号：EP16182759.7
申请日：2016-08-04
申请人： Power Integrations, Inc.
发明人： KUDYMOV, Alexey , RAMDANI, Jamal
IPC分类号： H01L29/872
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/66143 , H01L29/66212 , H01L29/66462 , H01L29/7787 , H01L29/872
摘要： A diode includes a two-dimensional electron gas formed in a heterojunction defined between first and second semiconductor material layers. First and second layers of insulating material are disposed on the second semiconductor layer. First and second electrodes are disposed in the second layer of insulating material. The first electrode is coupled to the second semiconductor material layer. The second electrode is coupled to the heterojunction. Third and fourth layers of insulating material are disposed on the second insulating layer. A first via is disposed in the fourth layer of insulating material and coupled to the second electrode. A first field plate is disposed in the fourth layer of insulating material. An edge of the first field plate laterally extends towards first via. The first via is separated from an edge of the first via. The first field plate is coupled to the first electrode.
摘要翻译：二极管包括在第一和第二半导体材料层之间限定的异质结中形成的二维电子气。第一和第二层绝缘材料设置在第二半导体层上。第一和第二电极设置在第二绝缘材料层中。第一电极耦合到第二半导体材料层。第二电极耦合到异质结。第三和第四绝缘材料层设置在第二绝缘层上。第一通孔设置在第四绝缘材料层中并且耦合到第二电极。第一场板设置在第四绝缘材料层中。第一场板的边缘横向延伸朝向第一通孔。第一通孔与第一通孔的边缘分离。第一场板耦合到第一电极。

3. 发明公开

EP3038161A3 HIGH-ELECTRON-MOBILITY TRANSISTORS 审中-公开
标题翻译： TRANSISTORS高电子迁移率
公开(公告)号：EP3038161A3
公开(公告)日：2016-09-28
申请号：EP15202460.0
申请日：2015-12-23
申请人： Power Integrations, Inc.
发明人： KUDYMOV, Alexey , RAMDANI, Jamal , LIU, Linlin
IPC分类号： H01L29/778 , H01L29/41 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/518 , H01L29/66462 , H01L29/7786
摘要： High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first (105) and a second (110) semiconductor material disposed to form a heterojunction (115) at which a two-dimensional electron gas (120) arises and source (125), drain (130), and gate (135) electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate (140) is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate (145) is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain.

4. 发明公开

EP3440696A1 INTEGRATED RESISTOR FOR SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3440696A1
公开(公告)日：2019-02-13
申请号：EP16898124.9
申请日：2016-04-08
申请人： Power Integrations, Inc.
发明人： KUDYMOV, Alexey , RAMDANI, Jamal
IPC分类号： H01L21/82 , H01L27/02 , H01L29/737

5. 发明公开

EP3038161A2 HIGH-ELECTRON-MOBILITY TRANSISTORS 审中-公开
标题翻译：高电子迁移率晶体管
公开(公告)号：EP3038161A2
公开(公告)日：2016-06-29
申请号：EP15202460.0
申请日：2015-12-23
申请人： Power Integrations, Inc.
发明人： KUDYMOV, Alexey , RAMDANI, Jamal , LIU, Linlin
IPC分类号： H01L29/778 , H01L29/41 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/518 , H01L29/66462 , H01L29/7786
摘要： High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first (105) and a second (110) semiconductor material disposed to form a heterojunction (115) at which a two-dimensional electron gas (120) arises and source (125), drain (130), and gate (135) electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate (140) is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate (145) is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain.
摘要翻译：描述了包括场板的高电子迁移率晶体管。在第一实施方式中，HEMT包括布置成形成二维电子气（120）出现的异质结（115）和源（125），漏极（130）的第一半导体材料（105）和第二半导体材料）和栅极（135）电极。栅电极被设置成调节源电极和漏电极之间的异质结中的导电。该门有一个漏侧边缘。栅极连接的场板（140）设置在栅极的漏极侧边缘之上并且朝向漏极侧向延伸。第二场板（145）设置在栅极连接场板的漏极侧边缘上方并且朝向漏极侧向延伸。

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