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1. 发明授权

EP2261991B1 Method of fabricating a high-voltage field-effect transistor 有权
公开(公告)号：EP2261991B1
公开(公告)日：2017-08-23
申请号：EP10182534.7
申请日：2000-01-31
申请人： Power Integrations, Inc.
发明人： Rumennik, Vladimir , Disney, Donald R. , Ajit, Janardhanan S.
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L21/336 , H01L21/266 , H01L21/74 , H01L29/40 , H01L29/10 , H01L29/417 , H01L29/423
CPC分类号： H01L29/0847 , H01L21/266 , H01L29/0634 , H01L29/0692 , H01L29/0852 , H01L29/0873 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A method for making a high voltage insulated gate field-effect transistor having a source region (14) and a drain region (19,17) comprises the steps of forming the drain region with an extended well region (17) having a buried layer (18) of opposite conduction type implanted therein. The buried layer creates an associated pair of parallel JFET conduction channels (24,25) in the well region. A minimal number of processing steps are required to form the parallel JFET conduction channels which provide the field-effect transistor with a low on-state resistance.

2. 发明授权

EP1903417B1 Electronic control device comprising a transistor with a tap connection 有权
标题翻译：具有附加的连接的晶体管的电子控制装置
公开(公告)号：EP1903417B1
公开(公告)日：2012-08-08
申请号：EP07024069.2
申请日：2004-05-19
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： G05F1/14 , H01L29/06 , H01L29/40 , H02M3/335 , H01L29/78
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： A technique for controlling a power supply (70) with power supply control element (82) with a tap element. In one embodiment, a power supply regulator includes a power transistor (88) having first, second, third and fourth terminals (89, 91, 93, 94). A control circuit (83) is included, which is coupled to the third and fourth terminals (93, 94) of the power transistor (88). The power transistor (88) is configured to switch a current between the first and second terminals (89, 91) in response a control signal received from the control circuit (83) at the third terminal (93). A voltage between the fourth (94) and second terminals (91) of the power transistor (83) is substantially proportional to a current flowing between the first and second terminals (89, 91) when a voltage between the first and second terminals (89, 91) is less than a pinch off voltage. The voltage between the fourth (94) and second terminals (91) of the power transistor is substantially constant and less than the voltage between the first and second terminals (89, 91) when the voltage between the first and second terminals (89, 91) is greater than the pinch off voltage.

3. 发明公开

EP1615324A3 Method and apparatus for controlling a circuit with a high voltage sense device 审中-公开
标题翻译：装置和方法，用于驱动具有高水平测量装置的电路
公开(公告)号：EP1615324A3
公开(公告)日：2010-04-07
申请号：EP05254248.7
申请日：2005-07-06
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： H02M3/145 , H01L21/00
CPC分类号： H02M1/36 , H01L21/823493 , H01L27/088 , H01L29/0634 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/402 , H01L29/7835 , H01L29/808 , H02M3/33507 , H03K17/0822
摘要： A control circuit (129) with a high voltage sense device. In one embodiment, a circuit includes a first transistor (123) disposed in a first substrate (117) having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage (109). A voltage provided at a third terminal of the first transistor is substantially proportional to a voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is less than a pinch-off voltage of the first transistor. The voltage provided at the third terminal of the first transistor is substantially constant and less than the voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is greater than the pinch-off voltage of the first transistor. The circuit also includes a control circuit (129) disposed in the first substrate (117) and coupled to the third terminal of the first transistor (123). The circuit further includes a second transistor (121) disposed in a second substrate (119). A first terminal of the second transistor (121) is coupled to the external voltage (109).

4. 发明公开

EP2557673A2 Method and apparatus for controlling a circuit with a high voltage sense device 审中-公开
标题翻译：装置和方法，用于驱动具有高水平测量装置的电路
公开(公告)号：EP2557673A2
公开(公告)日：2013-02-13
申请号：EP12190349.6
申请日：2005-07-06
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： H02M3/145 , H01L21/00
CPC分类号： H02M1/36 , H01L21/823493 , H01L27/088 , H01L29/0634 , H01L29/1066 , H01L29/1075 , H01L29/1087 , H01L29/402 , H01L29/7835 , H01L29/808 , H02M3/33507 , H03K17/0822
摘要： A control circuit (129) with a high voltage sense device. In one embodiment, a circuit includes a first transistor (123) disposed in a first substrate (117) having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage (109). A voltage provided at a third terminal of the first transistor is substantially proportional to a voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is less than a pinch-off voltage of the first transistor. The voltage provided at the third terminal of the first transistor is substantially constant and less than the voltage between the first and second terminals of the first transistor when the voltage between the first and second terminals of the first transistor is greater than the pinch-off voltage of the first transistor. The circuit also includes a control circuit (129) disposed in the first substrate (117) and coupled to the third terminal of the first transistor (123). The circuit further includes a second transistor (121) disposed in a second substrate (119). A first terminal of the second transistor (121) is coupled to the external voltage (109).

5. 发明公开

EP1486844A3 Electronic control device comprising a transistor with a tap connection 有权
标题翻译：具有附加的连接的晶体管的电子控制装置
公开(公告)号：EP1486844A3
公开(公告)日：2005-02-16
申请号：EP04252903.2
申请日：2004-05-19
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： G05F1/46 , H02M1/00 , H01L29/78
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： A technique for controlling a power supply (70) with power supply control element (82) with a tap element. In one embodiment, a power supply regulator includes a power transistor (88) having first, second, third and fourth terminals (89, 91, 93, 94). A control circuit (83) is included, which is coupled to the third and fourth terminals (93, 94) of the power transistor (88). The power transistor (88) is configured to switch a current between the first and second terminals (89, 91) in response a control signal received from the control circuit (83) at the third terminal (93). A voltage between the fourth (94) and second terminals (91) of the power transistor (83) is substantially proportional to a current flowing between the first and second terminals (89, 91) when a voltage between the first and second terminals (89, 91) is less than a pinch off voltage. The voltage between the fourth (94) and second terminals (91) of the power transistor is substantially constant and less than the voltage between the first and second terminals (89, 91) when the voltage between the first and second terminals (89, 91) is greater than the pinch off voltage.

6. 发明公开

EP1486844A2 Electronic control device comprising a transistor with a tap connection 有权
标题翻译：具有附加的连接的晶体管的电子控制装置
公开(公告)号：EP1486844A2
公开(公告)日：2004-12-15
申请号：EP04252903.2
申请日：2004-05-19
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： G05F1/46 , H02M1/00 , H01L29/78
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： A technique for controlling a power supply (70) with power supply control element (82) with a tap element. In one embodiment, a power supply regulator includes a power transistor (88) having first, second, third and fourth terminals (89, 91, 93, 94). A control circuit (83) is included, which is coupled to the third and fourth terminals (93, 94) of the power transistor (88). The power transistor (88) is configured to switch a current between the first and second terminals (89, 91) in response a control signal received from the control circuit (83) at the third terminal (93). A voltage between the fourth (94) and second terminals (91) of the power transistor (83) is substantially proportional to a current flowing between the first and second terminals (89, 91) when a voltage between the first and second terminals (89, 91) is less than a pinch off voltage. The voltage between the fourth (94) and second terminals (91) of the power transistor is substantially constant and less than the voltage between the first and second terminals (89, 91) when the voltage between the first and second terminals (89, 91) is greater than the pinch off voltage.
摘要翻译：一种用于控制与具有抽头元件电源控制元件（82）的电源（70）的技术。在一个，实施例的电源调节器包括具有功率晶体管（88），第一，第二，第三和第四端子（89，91，93，94）。其被耦合到功率晶体管（88）的第三和第四端子（93，94）的控制电路（83）被包括，全部。功率晶体管（88）被配置为切换响应（89，91）在所述第三端子（93）从控制电路（83）接收的控制信号在第一和第二端子之间的电流。 A中的第四间（94）和第二端子（91）的功率晶体管（83）的电压大致正比于第一和第二端子（89,91）之间流动的电流。当第一和第二端子之间的电压（89 ，91）小于夹断电压。所述第四间（94）和第二端子（91）的功率晶体管的电压是基本恒定，并且小于所述第一和第二端子之间的电压（89，91）当第一和第二端子（89，91之间的电压）大于夹断电压。

7. 发明公开

EP1465260A2 High-voltage field-effect transistor 审中-公开
标题翻译：高电压场效应晶体管
公开(公告)号：EP1465260A2
公开(公告)日：2004-10-06
申请号：EP04009635.6
申请日：2000-01-31
申请人： Power Integrations, Inc.
发明人： Rumennik, Vladimir , Disney, Donald R. , Ajit, Janardhanan S.
IPC分类号： H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7816 , H01L21/26 , H01L21/266 , H01L29/0619 , H01L29/0634 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/0873 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/66659 , H01L29/66674 , H01L29/66681 , H01L29/7801 , H01L29/7832 , H01L29/7835
摘要： A high voltage insulated gate-effect transistor includes an insulated gate field-effect device structure having a source (14) and a drain (19), the drain (19) being formed with an extended well region (17) having one or more buried layers (18) of opposite conduction type sandwiched therein. The one or more buried layers (18) create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. The parallel JFET conduction channels provide the HVFET with a low on-state resistance.
摘要翻译：高压绝缘栅极效应晶体管包括具有源极（14）和漏极（19）的绝缘栅场效应器件结构，漏极（19）形成有延伸阱区（17），该延伸阱区具有一个或多个埋入夹在其中的相反导电类型的层（18）。一个或多个埋层（18）在阱区的延伸部分中产生相关联的多个平行JFET导电沟道。并联JFET导电沟道为HVFET提供低导通电阻。

8. 发明授权

EP2256577B1 Electronic control device comprising a transistor with a tap connection 有权
标题翻译：具有附加的连接的晶体管的电子控制装置
公开(公告)号：EP2256577B1
公开(公告)日：2015-03-18
申请号：EP10176318.3
申请日：2004-05-19
申请人： Power Integrations, Inc.
发明人： Disney, Donald R.
IPC分类号： G05F1/46 , H02M1/00 , H01L29/78 , G05F1/14 , H01L29/40 , H01L29/423 , H01L29/06 , H01L29/08 , H02M1/36 , H02M3/335
CPC分类号： H01L29/7803 , G05F1/14 , H01L29/0634 , H01L29/0653 , H01L29/0847 , H01L29/407 , H01L29/42368 , H01L29/7802 , H01L29/7813 , H02M1/36 , H02M3/335 , H02M3/33507 , H02M3/33553 , H02M3/33561 , H02M2001/0009
摘要： A technique for controlling a power supply (70) with power supply control element (82) with a tap element. In one embodiment, a power supply regulator includes a power transistor (88) having first, second, third and fourth terminals (89, 91, 93, 94). A control circuit (83) is included, which is coupled to the third and fourth terminals (93, 94) of the power transistor (88). The power transistor (88) is configured to switch a current between the first and second terminals (89, 91) in response a control signal received from the control circuit (83) at the third terminal (93). A voltage between the fourth (94) and second terminals (91) of the power transistor (83) is substantially proportional to a current flowing between the first and second terminals (89, 91) when a voltage between the first and second terminals (89, 91) is less than a pinch off voltage. The voltage between the fourth (94) and second terminals (91) of the power transistor is substantially constant and less than the voltage between the first and second terminals (89, 91) when the voltage between the first and second terminals (89, 91) is greater than the pinch off voltage.

9. 发明公开

EP2261991A3 Method of fabricating a high-voltage field-effect transistor 有权
标题翻译：制造高压场效应晶体管的方法
公开(公告)号：EP2261991A3
公开(公告)日：2011-01-05
申请号：EP10182534.7
申请日：2000-01-31
申请人： Power Integrations, Inc.
发明人： Rumennik, Vladimir , Disney, Donald R. , Ajit, Janardhanan S.
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L21/336 , H01L21/266 , H01L21/74 , H01L29/40 , H01L29/10 , H01L29/417 , H01L29/423
CPC分类号： H01L29/0847 , H01L21/266 , H01L29/0634 , H01L29/0692 , H01L29/0852 , H01L29/0873 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A method for making a high voltage insulated gate field-effect transistor having a source region (14) and a drain region (19,17) comprises the steps of forming the drain region with an extended well region (17) having a buried layer (18) of opposite conduction type implanted therein. The buried layer creates an associated pair of parallel JFET conduction channels (24,25) in the well region. A minimal number of processing steps are required to form the parallel JFET conduction channels which provide the field-effect transistor with a low on-state resistance.
摘要翻译：一种用于制造具有源极区（14）和漏极区（19,17）的高压绝缘栅场效应晶体管的方法包括以下步骤：形成具有埋置层的延伸阱区（17）的漏极区（17）在其中注入相反导电类型的电极（图18）。埋层在阱区中形成相关的一对平行JFET导电沟道（24,25）。需要最少数量的处理步骤来形成为场效应晶体管提供低导通状态电阻的并联JFET导电沟道。

10. 发明公开

EP2261991A2 Method of fabricating a high-voltage field-effect transistor 有权
标题翻译：制造高压场效应晶体管的方法
公开(公告)号：EP2261991A2
公开(公告)日：2010-12-15
申请号：EP10182534.7
申请日：2000-01-31
申请人： Power Integrations, Inc.
发明人： Rumennik, Vladimir , Disney, Donald R. , Ajit, Janardhanan S.
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L21/336 , H01L21/266 , H01L21/74 , H01L29/40 , H01L29/10 , H01L29/417 , H01L29/423
CPC分类号： H01L29/0847 , H01L21/266 , H01L29/0634 , H01L29/0692 , H01L29/0852 , H01L29/0873 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A method for making a high voltage insulated gate field-effect transistor having an insulated gate field-effect device structure with a source and a drain comprises the steps of forming the drain (19) with an extended well region (17) having one or more buried layers (18) of opposite conduction type sandwiched therein. The one or more buried layers (18) create an associated plurality of parallel JFET conduction channels (25) in the extended portion of the well region. A minimal number of processing steps arc required to form the parallel JFET conduction channels which provide the HVFET with a low on-state resistance.
摘要翻译：一种用于制造具有源极和漏极的绝缘栅场效应器件结构的高压绝缘栅场效应晶体管的方法，包括以下步骤：形成具有延伸阱区（17）的漏极（19），所述延伸阱区具有一个或多个夹在其中的相反导电类型的掩埋层（18）。一个或多个埋层（18）在阱区的延伸部分中形成相关联的多个平行JFET导电沟道（25）。需要最少数量的处理步骤来形成为HVFET提供低导通电阻的并联JFET导电沟道。

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