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1. 发明公开

EP2882884A1 HEATING ELEMENT FOR A PLANAR HEATER OF A MOCVD REACTOR 有权转让
标题翻译：加热元件FOR A MOCVD反应器的FLAT加热器
公开(公告)号：EP2882884A1
公开(公告)日：2015-06-17
申请号：EP13753087.9
申请日：2013-08-05
申请人： Plansee SE , Veeco Instruments Inc.
发明人： MARTINZ, Hans-Peter , SULIK, Manfred , BOGUSLAVSKIY, Vadim
IPC分类号： C23C16/46 , H05B3/14 , H05B3/24
CPC分类号： C23C16/46 , B22F5/006 , B22F7/004 , H05B3/12 , H05B3/143 , H05B3/22
摘要： The invention is related to a heating element (10) comprising a heating body (20) which is directly covered at least partly with a porous sintered coating (30), wherein the heating body (20) the porous sintered coating (30) each comprises at least 90 % by weight of tungsten.

2. 发明授权

EP2882883B1 TERMINAL FOR MECHANICAL SUPPORT OF A HEATING ELEMENT 有权转让
标题翻译：用于机械支撑加热元件的端子
公开(公告)号：EP2882883B1
公开(公告)日：2017-10-04
申请号：EP13752822.0
申请日：2013-08-05
申请人： Plansee SE , Veeco Instruments Inc.
发明人： PLANKENSTEINER, Arno , FEIST, Christian , BOGUSLAVSKIY, Vadim , GURARY, Alexander I. , CHANG, Chenghung Paul
IPC分类号： C23C16/458 , C23C16/46 , H01L21/67
CPC分类号： H05B1/00 , C23C16/4585 , C23C16/46 , H01L21/67115
摘要： A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.
摘要翻译：一种用于加热元件的机械支撑的端子，包括基座装置，安装装置，适于支撑加热元件的安装装置以及将基座装置连接到安装装置的支撑装置，支撑装置允许加热元件围绕径向轴线并小于加热元件围绕切向和/或轴向轴线的约10％的位移。

3. 发明授权

EP2882884B1 HEATING ELEMENT FOR A PLANAR HEATER OF A MOCVD REACTOR 有权转让
标题翻译：加热元件FOR A MOCVD反应器的FLAT加热器
公开(公告)号：EP2882884B1
公开(公告)日：2016-11-30
申请号：EP13753087.9
申请日：2013-08-05
申请人： Plansee SE , Veeco Instruments Inc.
发明人： MARTINZ, Hans-Peter , SULIK, Manfred , BOGUSLAVSKIY, Vadim
IPC分类号： C23C16/46 , H05B3/14 , H05B3/24
CPC分类号： C23C16/46 , B22F5/006 , B22F7/004 , H05B3/12 , H05B3/143 , H05B3/22

4. 发明公开

EP2882883A1 TERMINAL FOR MECHANICAL SUPPORT OF A HEATING ELEMENT 有权转让
标题翻译： ENDGERÄTZUR MECHANISCHENSTÜTZUNGEINES HEIZEMENTS
公开(公告)号：EP2882883A1
公开(公告)日：2015-06-17
申请号：EP13752822.0
申请日：2013-08-05
申请人： Plansee SE , Veeco Instruments Inc.
发明人： PLANKENSTEINER, Arno , FEIST, Christian , BOGUSLAVSKIY, Vadim , GURARY, Alexander I. , CHANG, Chenghung Paul
IPC分类号： C23C16/458 , C23C16/46 , H01L21/67
CPC分类号： H05B1/00 , C23C16/4585 , C23C16/46 , H01L21/67115
摘要： A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.
摘要翻译：一种用于加热元件的机械支撑的端子，包括基座装置，安装装置，适于支撑加热元件的安装装置，以及将基座装置连接到安装装置的支撑装置，支撑装置允许加热元件围绕径向轴线并且围绕切线和/或轴向轴线小于约10％的加热元件的位移。

5. 发明授权

EP1358368B1 SUSCEPTORLESS REACTOR FOR GROWING EPITAXIAL LAYERS ON WAFERS BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译： SUSZEPTORLOSER REAKTOR ZUM AUFWACHSENLASSEN VON EPITAXIALEN SCHICHTEN AUF WAFERN MITTELS CVD
公开(公告)号：EP1358368B1
公开(公告)日：2016-04-13
申请号：EP01964250.3
申请日：2001-08-21
申请人： Veeco Instruments Inc.
发明人： BOGUSLAVSKIY, Vadim , GURARY, Alexander
IPC分类号： C30B25/02 , C30B25/08 , C30B25/12 , C30B25/14 , C23C16/458 , C23C16/46 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10

6. 发明公开

EP2659244A1 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
标题翻译：方法及系统现场校准高温计
公开(公告)号：EP2659244A1
公开(公告)日：2013-11-06
申请号：EP11817495.2
申请日：2011-12-22
申请人： Veeco Instruments Inc.
发明人： GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

7. 发明公开

EP2539920A1 PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL 审中-公开
标题翻译：处理方法及其装置温度控制分配
公开(公告)号：EP2539920A1
公开(公告)日：2013-01-02
申请号：EP10795886.0
申请日：2010-12-14
申请人： Veeco Instruments Inc.
发明人： GURARY, Alex , BELOUSOV, Mikhail , BOGUSLAVSKIY, Vadim , MITROVIC, Bojan
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L22/26 , C23C16/45521 , C23C16/4584 , C23C16/52 , H01L21/0254 , H01L21/0262 , H01L21/67109 , H01L21/68785 , H01L21/68792
摘要： Wafer treatment process and apparatus is provided with a wafer carrier (80) arranged to hold wafers (124) and to inject a fill gas into gaps (130) between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

8. 发明授权

EP1771685B1 METHOD FOR INCREASING THE EMISSIVITY OF A REFRACTORY METAL MATERIAL, RADIENT HEATER, SYSTEM AND SUSCEPTOR 有权
标题翻译：法在加固辐射资产的难熔金属的材料，辐射加热系统及基座的
公开(公告)号：EP1771685B1
公开(公告)日：2015-04-15
申请号：EP04795660.2
申请日：2004-10-19
申请人： VEECO INSTRUMENTS INC.
发明人： BOGUSLAVSKIY, Vadim , GURARY, Alexander
IPC分类号： C21D7/06 , C22F1/18 , C23F1/26 , F28F13/18
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06

9. 发明公开

EP2828886A1 KEYED WAFER CARRIER 有权
标题翻译： CODIERTERWAFERTRÄGER
公开(公告)号：EP2828886A1
公开(公告)日：2015-01-28
申请号：EP13763498.6
申请日：2013-03-01
申请人： Veeco Instruments Inc.
发明人： KRISHNAN, Sandeep , MOY, Keng , GURARY, Alexander, I. , KING, Matthew , BOGUSLAVSKIY, Vadim , KROMMENHOEK, Steven
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： C23C16/4584 , C23C16/4586 , C23C16/46 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.
摘要翻译：化学气相沉积反应器的结构理想地包括具有内部的反应室，安装在反应室中的主轴和可释放地安装到主轴上以与其一起旋转的晶片载体。主轴理想地具有沿着垂直旋转轴线延伸的轴和从轴向外突出的键。晶片载体优选地具有限定相对面对的顶部和底部表面的主体和至少一个晶片保持特征，其被构造成使得晶片可以保持在其中，其中晶片的表面暴露在主体的顶部表面。晶片载体理想地还具有从主体的底表面延伸到主体中的凹槽和沿着第一横向轴线从凹部的周边向外突出的键槽。轴优选地接合在凹部中，并且键优选地接合到键槽中。

10. 发明公开

EP1771685A2 SYSTEM AND METHOD FOR INCREASING THE EMISSIVITY OF A MATERIAL 有权
标题翻译：法在加固辐射资产的难熔金属的材料，辐射加热系统及基座的
公开(公告)号：EP1771685A2
公开(公告)日：2007-04-11
申请号：EP04795660.2
申请日：2004-10-19
申请人： VEECO INSTRUMENTS INC.
发明人： BOGUSLAVSKIY, Vadim , GURARY, Alexander
IPC分类号： F24C3/04
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06
摘要： A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.

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