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1. 发明公开

EP2660870A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：场效应晶体管及其制造方法
公开(公告)号：EP2660870A1
公开(公告)日：2013-11-06
申请号：EP11853548.3
申请日：2011-12-19
申请人： Panasonic Corporation , Dai-Ichi Kogyo Seiyaku Co., Ltd.
发明人： HIRANO, Koichi , KOMATSU, Shingo , SAITO, Yasuteru , IKE, Naoki
IPC分类号： H01L29/786 , H01L21/28 , H01L21/283 , H01L21/288 , H01L21/336 , H05B33/12
CPC分类号： H01L29/7869 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of - C(COOH)=C(COOH)-, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.
摘要翻译：本发明通过简化的工艺实现了薄膜晶体管的金属氧化物膜的形成。本发明涉及一种用于制造场效应晶体管的方法，该场效应晶体管包括栅电极，源电极，漏电极，沟道层和栅绝缘层，其中沟道层通过使用含金属盐的组合物其包含金属盐，具有-C（COOH）= C（COOH） - 的顺式结构的多元羧酸，有机溶剂和水，其中多价羧酸与金属盐的摩尔比在范围为0.5至4.0。

2. 发明公开

EP2571043A1 FLEXIBLE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译：柔性薄板黑色，VERFAHREN ZU SEINER HERSTELLUNG UND BILDANZEIGEVORRICHTUNG
公开(公告)号：EP2571043A1
公开(公告)日：2013-03-20
申请号：EP11780349.4
申请日：2011-04-22
申请人： Panasonic Corporation
发明人： SUZUKI, Takeshi , HIRANO, Koichi
IPC分类号： H01L21/336 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L29/41 , H01L29/417 , H01L29/786 , H01L51/50
CPC分类号： H01L29/78603 , H01L27/0688 , H01L27/1218 , H01L27/1251 , H01L27/1285 , H01L27/1292 , H01L27/3246 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78681 , H01L29/7869 , H01L51/0023 , H01L51/003 , H01L51/0097 , H01L51/0545 , H01L2251/5338
摘要： There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes.
摘要翻译：提供了一种用于制造柔性半导体器件的方法。本发明的方法包括以下步骤：（A）提供金属箔; （B）在所述金属箔上形成绝缘层，所述绝缘层具有用作栅极绝缘膜的部分; （C）在所述绝缘层上形成支撑基板; （D）蚀刻一部分金属箔从而形成源电极和漏电极; （E）通过利用源电极和漏电极作为堤构件在位于源电极和漏电极之间的间隙部分中形成半导体层; 和（F）在所述绝缘层上形成树脂膜层，使得所述树脂膜层覆盖所述半导体层，所述源电极和所述漏电极。在步骤（F）中，树脂膜层的一部分与位于源极和漏极之间的间隙部分相互配合。

3. 发明公开

EP2570847A1 ELECTRONIC PAPER AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译： ELEKTRONISCHES PAPIER UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2570847A1
公开(公告)日：2013-03-20
申请号：EP11780341.1
申请日：2011-04-14
申请人： Panasonic Corporation
发明人： HIRANO, Koichi , NAKAGAWA, Masami , NAKATANI, Seiichi
IPC分类号： G02F1/167 , G02F1/17 , G09F9/00 , G09F9/37 , G09F9/40
CPC分类号： G09F9/372 , G02F1/167 , G02F2001/1676 , G02F2201/18 , G09F9/301 , G09F15/0075
摘要： Provided is an electronic paper that permits a high-quality, large area to be easily created. Also provided is a method for producing the electronic paper. The electronic paper comprises: a first substrate upon which first electrodes are formed and a second substrate upon which second electrodes are formed, said first substrate and second substrate disposed so as to face each other; and a plurality of cell spaces constituting pixels between said first substrate and second substrate. The first substrate comprises a plurality of first sheet members, each having a first electrode formed thereon. By disposing a cover substrate on said first sheet members, each with a partition wall therebetween, a plurality of subsheet formations comprising the plurality of cell spaces partitioned by the partition walls are formed, and the first electrodes are connected in between adjacent subsheet formations.
摘要翻译：提供了允许容易地创建高质量，大面积的电子纸。还提供了一种用于生产电子纸的方法。电子纸包括：形成有第一电极的第一基板和形成第二电极的第二基板，所述第一基板和第二基板彼此相对配置; 以及在所述第一基板和第二基板之间构成像素的多个单元空间。第一基板包括多个第一片构件，每个第一片构件具有形成在其上的第一电极。通过将覆盖基板设置在所述第一板状部件上，每个板状部件之间具有隔壁，形成由分隔壁隔开的多个电池单元的多个子片状结构，并且第一电极连接在相邻的子片层之间。

4. 发明公开

EP2312620A1 FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：灵活的HBABLEITERBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2312620A1
公开(公告)日：2011-04-20
申请号：EP09804694.9
申请日：2009-07-30
申请人： Panasonic Corporation
发明人： HIRANO, Koichi , NAKATANI, Seiichi , OGAWA, Tatsuo , ICHIRYU, Takashi , SAZUKI, Takeshi
IPC分类号： H01L21/336 , H01L21/20 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78651 , H01L27/1218 , H01L27/124 , H01L27/1266 , H01L29/41733 , H01L29/42384 , H01L29/78603 , H01L29/7869
摘要： There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.
摘要翻译：提供了一种制造柔性半导体器件的方法，其特征在于包括：（i）在金属箔的上表面上形成绝缘膜的步骤，（ii）在金属的上表面上形成引出电极图案的步骤箔，（iii）以使得半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤，（iv）在所述绝缘膜的上表面上形成密封树脂层的步骤金属箔以密封树脂层覆盖半导体层和引出电极图案，以及（v）通过蚀刻金属箔形成电极的步骤，其中金属箔用作绝缘膜的支撑体，（i）至（iv）中形成的并用作（v）中的电极的构成材料的引出电极图案，半导体层和密封树脂层。由于作为支撑体的金属箔不需要最终被剥离，所以可以通过简单的工艺制造TFT元件。此外，由于使用金属箔作为支撑体，因此可以引入绝缘膜和半导体层的制造的高温处理，由此提高TFT特性。

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