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1. 发明公开

EP2312620A1 FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：灵活的HBABLEITERBAUELEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2312620A1
公开(公告)日：2011-04-20
申请号：EP09804694.9
申请日：2009-07-30
申请人： Panasonic Corporation
发明人： HIRANO, Koichi , NAKATANI, Seiichi , OGAWA, Tatsuo , ICHIRYU, Takashi , SAZUKI, Takeshi
IPC分类号： H01L21/336 , H01L21/20 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78651 , H01L27/1218 , H01L27/124 , H01L27/1266 , H01L29/41733 , H01L29/42384 , H01L29/78603 , H01L29/7869
摘要： There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved.
摘要翻译：提供了一种制造柔性半导体器件的方法，其特征在于包括：（i）在金属箔的上表面上形成绝缘膜的步骤，（ii）在金属的上表面上形成引出电极图案的步骤箔，（iii）以使得半导体层与引出电极图案接触的方式在绝缘膜上形成半导体层的步骤，（iv）在所述绝缘膜的上表面上形成密封树脂层的步骤金属箔以密封树脂层覆盖半导体层和引出电极图案，以及（v）通过蚀刻金属箔形成电极的步骤，其中金属箔用作绝缘膜的支撑体，（i）至（iv）中形成的并用作（v）中的电极的构成材料的引出电极图案，半导体层和密封树脂层。由于作为支撑体的金属箔不需要最终被剥离，所以可以通过简单的工艺制造TFT元件。此外，由于使用金属箔作为支撑体，因此可以引入绝缘膜和半导体层的制造的高温处理，由此提高TFT特性。

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