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1. 发明授权

EP2226853B1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：EP2226853B1
公开(公告)日：2014-02-26
申请号：EP09815447.9
申请日：2009-06-04
申请人： Panasonic Corporation
发明人： YOKOGAWA, Toshiya , OYA, Mitsuaki , YAMADA, Atsushi , KATO, Ryou
IPC分类号： H01L33/40
CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012

2. 发明公开

EP2541624A1 NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译： NISRIDHALBLEITERELEMENT UND DESSEN HERSTELLUNGSVERFAHREN
公开(公告)号：EP2541624A1
公开(公告)日：2013-01-02
申请号：EP11765181.0
申请日：2011-02-23
申请人： Panasonic Corporation
发明人： YOKOGAWA, Toshiya , OYA, Mitsuaki , YAMADA, Atsushi , KATO, Ryou
IPC分类号： H01L33/32 , H01L21/28 , H01L33/40 , H01S5/042 , H01S5/343
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is made of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型GaN类半导体区域，其表面12从m面倾斜不小于1°的角度不超过5°; 以及布置在p型GaN基半导体区域上的电极30。电极30包括由Mg和选自Pt，Mo和Pd的金属的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

3. 发明公开

EP2458654A1 LIGHT EMITTING DIODE 审中-公开
标题翻译： LICHTEMITTIERENDE DIODE
公开(公告)号：EP2458654A1
公开(公告)日：2012-05-30
申请号：EP10802058.7
申请日：2010-07-12
申请人： Panasonic Corporation
发明人： IWANAGA, Junko , YOKOGAWA, Toshiya , YAMADA, Atsushi
IPC分类号： H01L33/38 , H01L33/32
CPC分类号： H01L33/382 , H01L33/16 , H01L33/32
摘要： A light-emitting diode element of the present invention includes: an n-type conductive layer 2 having a principal surface and a rear surface, the n-type conductive layer 2 being made of a gallium nitride-based compound, the principal surface being an m -plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3 interposed between the n-type conductive layer 2 and the p-type conductive layer 4; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.
摘要翻译：本发明的发光二极管元件包括：具有主表面和后表面的n型导电层2，n型导电层2由氮化镓基化合物制成，主表面为 m平面设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4的半导体多层结构21和介于n型导电层2之间的有源层3 2和p型导电层4; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

4. 发明公开

EP2226853A1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：EP2226853A1
公开(公告)日：2010-09-08
申请号：EP09815447.9
申请日：2009-06-04
申请人： Panasonic Corporation
发明人： YOKOGAWA, Toshiya , OYA, Mitsuaki , YAMADA, Atsushi , KATO, Ryou
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m -plane 12, a semiconductor multilayer structure 20 that has been formed on the m -plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.

5. 发明公开

EP2602836A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：EP2602836A1
公开(公告)日：2013-06-12
申请号：EP11814318.9
申请日：2011-08-05
申请人： Panasonic Corporation
发明人： ISOZAKI, Akihiro , INOUE, Akira , YAMADA, Atsushi , YOKOGAWA, Toshiya
IPC分类号： H01L33/22 , H01L33/32 , H01S5/343
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n-and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of -80 degrees to -5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23，有源层区域22，其包括m面氮化物半导体层并夹在n型和p型氮化物半导体层之间; 与n型氮化物半导体层电连接的n型电极30，电连接到p型氮化物半导体层的p型电极40; 发光面，通过该发光面在该有源层区域中产生的偏振光从该元件中被提取出来; 以及为发光面设置的条状结构50，该条状结构50具有多个突起，该多个突起沿方向延伸，该方向限定了5度至80度的角度或相对于-80度至-5度的角度沿着m面氮化物半导体层的a轴方向。

6. 发明公开

EP2416387A1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：EP2416387A1
公开(公告)日：2012-02-08
申请号：EP10758184.5
申请日：2010-03-16
申请人： Panasonic Corporation
发明人： OYA, Mitsuaki , YOKOGAWA, Toshiya , YAMADA, Atsushi , ISOZAKI, Akihiro
IPC分类号： H01L33/40 , H01L21/28 , H01L33/32
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m -plane surface 12; a semiconductor multilayer structure 20 provided on the m -plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物基半导体发光器件100包括：具有m面表面12的GaN衬底10; 提供在GaN衬底10的m-平面12上的半导体多层结构20; 以及设置在半导体多层结构20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34. Zn层32与p型半导体区域的表面接触半导体多层结构20。

7. 发明公开

EP2352184A1 NITROGEN-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译： HELLBLEITERELEMENT AUF STICKSTOFFBASIS UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2352184A1
公开(公告)日：2011-08-03
申请号：EP10758191.0
申请日：2010-03-17
申请人： Panasonic Corporation
发明人： OYA, Mitsuaki , YOKOGAWA, Toshiya , YAMADA, Atsushi , ISOZAKI, Akihiro
IPC分类号： H01L33/32 , H01L21/28 , H01L33/40
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m -plane surface 12; a semiconductor multilayer structure 20 provided on the m -plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具有：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

8. 发明公开

EP2352165A1 NITRIDE-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR 有权
标题翻译： HALBLEITERELEMENT AUF NITRIDBASIS
公开(公告)号：EP2352165A1
公开(公告)日：2011-08-03
申请号：EP10758190.2
申请日：2010-03-17
申请人： Panasonic Corporation
发明人： OYA, Mitsuaki , YOKOGAWA, Toshiya , YAMADA, Atsushi , ISOZAKI, Akihiro
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m -plane surface 12; a semiconductor multilayer structure 20 provided on the m -plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具有：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触半导体多层结构20。

9. 发明授权

EP2479807B1 Nitride semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：EP2479807B1
公开(公告)日：2014-06-18
申请号：EP10838943.8
申请日：2010-12-21
申请人： Panasonic Corporation
发明人： YOKOGAWA, Toshiya , OYA, Mitsuaki , YAMADA, Atsushi , KATO, Ryou
IPC分类号： H01L33/40 , H01L33/32 , H01L33/16
CPC分类号： H01L33/32 , H01L33/16 , H01L33/40 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , Y10T436/112499 , H01L2924/00012

10. 发明公开

EP2701183A1 STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：结构生长的氮化物半导体层层压结构制作，半导体元件的氮化物，光源和过程
公开(公告)号：EP2701183A1
公开(公告)日：2014-02-26
申请号：EP12821910.2
申请日：2012-08-03
申请人： Panasonic Corporation
发明人： CHOE,Songbaek , YOKOGAWA, Toshiya , iNOUE, Akira , YAMADA, Atsushi
IPC分类号： H01L21/205 , C30B25/04 , C30B25/18 , C30B29/38 , H01L33/16 , H01L33/22 , H01L33/50
CPC分类号： H01L33/18 , C30B25/04 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/20 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32 , H01L33/58 , H01L2224/14 , H01L2224/16225
摘要： A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m -plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m -plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m -plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c -axis of the sapphire substrate is not less than 0° and not more than 35°.
摘要翻译：一种用于氮化物半导体层中的所有这是在本申请中盘游离缺失的生长结构包括：哪生长面的蓝宝石衬底是m面; 和设置在所述蓝宝石衬底的生长面，worin脊形氮化物半导体层的多个respectivement者之间设置的凹部的底表面上的脊状的氮化物半导体层上的多个是蓝宝石的m面底物，脊形氮化物半导体层的所述多个的生长面为m面，以及角度的上脊形氮化物半导体层和蓝宝石衬底的交流轴的多个延伸方向之间的绝对值不小于0°并且不大于35°。

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