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1. 发明公开

EP2698669A1 PHOTOSENSITIVE ORGANIC PARTICLE 审中-公开
标题翻译： LICHTEMPFINDLICHES有机硅TEILCHEN
公开(公告)号：EP2698669A1
公开(公告)日：2014-02-19
申请号：EP12771827.8
申请日：2012-04-11
申请人： Nissan Chemical Industries, Ltd.
发明人： KISHIOKA, Takahiro , UMEZAKI, Makiko , KIMURA, Shigeo , NISHIMAKI, Hirokazu , OHASHI, Tomoya , USUI, Yuki
IPC分类号： G03F7/038 , C08F220/54 , C08L101/00 , G03F7/004
CPC分类号： G03F7/20 , C08F220/20 , C08F220/30 , C08F220/54 , C08F220/56 , C08F220/58 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0048 , G03F7/038 , G03F7/0382 , G03F7/0388 , G03F7/32
摘要： There is provided a material, which makes it possible to form a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition comprising water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the photosensitive wherein the water-soluble organic particles include a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further comprises a photoacid generator. In addition, the photosensitive wherein the water-soluble organic particles include a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group. A pattern forming method comprising: a step of applying the photosensitive composition to a base material and drying to form a photosensitive coating; a step of exposing the coating to light through a mask; and a step of performing developing using a developer.
摘要翻译：提供了一种材料，其可以通过将感光性组合物施加到基材上并干燥以形成感光性涂层并进行曝光和显影而形成图案，以及形成图案的方法。包含水溶性有机颗粒和溶剂的光敏组合物，其中溶剂是水溶性有机颗粒的不良溶剂。优选地，其中水溶性有机颗粒包括含有用于形成有机颗粒的单元结构（A）的聚合物，用于形成颗粒间交联的单元结构（B）和用于赋予分散性的单元结构（C））的感光体，以及光敏组合物还包含光致酸产生剂。此外，其中水溶性有机颗粒包括含有用于形成有机颗粒的单元结构（A）的聚合物，用于形成颗粒间交联的单元结构（B），用于赋予分散性的单元结构（C））和具有光酸产生基团的单元结构（D）。一种图案形成方法，包括：将所述感光性组合物施加到基材上并干燥以形成感光性涂层的步骤; 通过掩模使涂层曝光的步骤; 以及使用显影剂进行显影的步骤。

2. 发明授权

EP3040777B1 PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM 失效转让
标题翻译：使用抗蚀剂下层膜的图案形成方法
公开(公告)号：EP3040777B1
公开(公告)日：2018-03-14
申请号：EP14840214.2
申请日：2014-08-27
申请人： Nissan Chemical Industries, Ltd.
发明人： OHASHI, Tomoya , KIMURA, Shigeo , USUI, Yuki , OGATA, Hiroto
IPC分类号： G03F7/038 , G03F7/11 , G03F7/40 , G03F7/26 , H01L21/027 , C08F20/32 , C08F8/14
CPC分类号： H01L21/3086 , C08F8/14 , C08F220/32 , G03F7/038 , G03F7/094 , G03F7/40 , H01L21/0273 , H01L21/30604 , H01L21/31111 , H01L21/31138 , H01L21/31144 , C08F220/26 , C08F220/14 , C08F220/18
摘要： The present invention provides a pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method comprising: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

3. 发明公开

EP3040777A1 PATTERN FORMING METHOD USING RESIST UNDERLAYER FILM 失效转让
标题翻译：法形成图案缺乏的下层膜的
公开(公告)号：EP3040777A1
公开(公告)日：2016-07-06
申请号：EP14840214.2
申请日：2014-08-27
申请人： Nissan Chemical Industries, Ltd.
发明人： OHASHI, Tomoya , KIMURA, Shigeo , USUI, Yuki , OGATA, Hiroto
IPC分类号： G03F7/11 , C08F20/32 , G03F7/26 , G03F7/40 , H01L21/027 , C08F8/14
CPC分类号： H01L21/3086 , C08F8/14 , C08F220/32 , G03F7/038 , G03F7/094 , G03F7/40 , H01L21/0273 , H01L21/30604 , H01L21/31111 , H01L21/31138 , H01L21/31144 , C08F220/26 , C08F220/14 , C08F220/18
摘要： The present invention provides a pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method comprising: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

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