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    • 2. 发明公开
    • METHOD FOR COLLECTION OF VALUABLE METAL FROM ITO SCRAP
    • 从ITO碎石收集有价值金属的方法
    • EP2078767A1
    • 2009-07-15
    • EP07767700.3
    • 2007-06-27
    • Nippon Mining & Metals Co., Ltd.
    • SHINDO, YuichiroTAKEMOTO, Kouichi
    • C25C1/14
    • C25C1/14C22B3/045C22B7/006C22B25/06C22B58/00Y02P10/228Y02P10/234
    • Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin. Consequently, provided is a method for efficiently collecting tin from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arising during the manufacture of such ITO sputtering target.
    • 提出了一种从ITO废料中回收有价金属的方法,包括通过对ITO废料进行电解来回收锡的步骤。 还提出了从ITO废料中回收有价金属的方法,包括提供ITO电解槽和锡收集槽,将ITO废料溶解在电解槽中,然后将锡收集在锡收集槽中的步骤。 另外提出了一种从ITO废料中回收有价金属的方法,包括以下步骤:通过将ITO废料作为电解液作为阳极溶解在电解质中,仅沉淀溶液中含有的锡作为锡本身或含锡的物质, 沉淀,将其置于收集槽中,将其重新溶解以获得氢氧化锡溶液,并对其进行电解或中和以收集锡。 因此,提供了一种用于从ITO铟锡氧(ITO)溅射靶的ITO废料或ITO废料(例如在制造这种ITO溅射靶期间​​产生的ITO碾磨端)有效地收集锡的方法。
    • 7. 发明公开
    • METHOD FOR COLLECTION OF VALUABLE METAL FROM ITO SCRAP
    • VERFAHREN ZUM SAMMELN VON WERTMETALL AUS ITO-ABFALL
    • EP2078768A1
    • 2009-07-15
    • EP07767697.1
    • 2007-06-27
    • Nippon Mining & Metals Co., Ltd.
    • SHINDO, YuichiroTAKEMOTO, Kouichi
    • C25C1/22C22B3/00C22B25/06
    • C25C1/22C22B3/045C22B3/44C22B7/006C22B25/06C22B58/00C25B1/00Y02P10/228Y02P10/234
    • Proposed is a method for collecting valuable metal from an ITO scrap by subjecting the ITO scrap to electrolysis and collecting the result as metallic indium. Specifically, the present invention proposes a method for selectively collecting metallic indium including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane, subsequently extracting anolyte temporarily, eliminating tin contained in the anolyte by a neutralization method, a replacement method or other methods, placing a solution from which the tin was eliminated in a cathode side again and performing electrolysis thereto; or a method for collecting valuable metal from an ITO scrap including the steps of obtaining a solution of In or Sn in an ITO electrolytic bath, eliminating the Sn in the solution, and collecting In in the collecting bath. These methods enable the efficient collection of metallic indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.
    • 提出了通过对ITO废料进行电解并将结果作为金属铟收集从ITO废料中收集有价金属的方法。 具体地说,本发明提出了一种选择性收集金属铟的方法,包括以下步骤:在隔膜或离子交换膜分隔的电解槽中对ITO废料进行电解,随后暂时提取阳极电解液,通过 中和方法,替代方法或其他方法,再次将阴极中除去锡的溶液放置并进行电解; 或从ITO废料中收集有价金属的方法,包括以下步骤:在ITO电解槽中获得In或Sn溶液,除去溶液中的Sn,并在收集槽中收集In。 这些方法能够在ITO溅射靶的制造过程中有效地收集来自铟锡氧化物(ITO)溅射靶的ITO废料的金属铟或ITO粉末等ITO废料。
    • 8. 发明公开
    • High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium
    • 高纯度铪,以及高纯度Hafniumtarget方法使用高纯度铪的制造薄膜
    • EP2017360A2
    • 2009-01-21
    • EP08165172.1
    • 2004-10-25
    • Nippon Mining & Metals Co., Ltd.
    • SHINDO, Yuichiro
    • C22B34/14
    • C22C27/00C22B34/14C23C14/3414
    • The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.
    • 本发明涉及高纯度铪具有纯度为4N或更高不含锆和气体成分和40重量ppm或更低的氧含量,并寻求高纯度铪靶和薄膜形成,并且具有的纯度的高纯度铪 4N以上不含锆和气体成分并且其中的硫和磷的含量分别为10重量ppm或更低。 因此,本发明涉及一种使用具有减小的锆作为原料海绵铪高纯度铪材料,并且其中氧,硫和在铪含磷的含量降低时,以及到目标和薄 寻求材料成膜,并以高纯度铪的制造方法。 从而提供了有效且稳定的制造技术,使高纯度铪材料的制造中,与目标和从寻求材料的薄膜形成的。