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1. 发明授权

EP2881999B1 Light emitting element 有权
公开(公告)号：EP2881999B1
公开(公告)日：2018-08-01
申请号：EP14196433.8
申请日：2014-12-05
申请人： Nichia Corporation
发明人： Sato, Kosuke , Emura, Keiji
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/06 , H01L33/38
摘要： A light emitting element having; a first and a second conductivity type semiconductor layers, a first and a second electrodes formed on the first and second conductivity type semiconductor layer, the first and the second electrodes being disposed on the same face side of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in plan view, the first electrode having a first connecting portion, a first extending portion, and two second extending portions, the second electrode having a second connecting portion and two third extending portions, the first extending portion of the first electrode extending linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extending parallel to the first extending portion on two sides of the first extending portion, the two third extending portions of the second electrode extending parallel to the first extending portion between the first extending portion and the two second extending portions.

2. 发明授权

EP2403024B1 Adhesion layer between electrode and insulating layer for a semiconductor element and corresponding fabrication method 有权
标题翻译：用于半导体元件的电极和绝缘层之间的粘附层以及相应的制造方法
公开(公告)号：EP2403024B1
公开(公告)日：2017-05-31
申请号：EP11171908.4
申请日：2011-06-29
申请人： Nichia Corporation
发明人： Emura, Keiji , Inoue, Fumihiro
IPC分类号： H01L33/40 , H01L23/00 , H01L23/31 , H01L33/38 , H01L33/44
CPC分类号： H01L33/44 , H01L23/3185 , H01L23/3192 , H01L24/05 , H01L33/38 , H01L33/40 , H01L2224/0401 , H01L2224/05567 , H01L2224/05669 , H01L2224/06102 , H01L2933/0016 , H01L2924/00014

3. 发明公开

EP2763175A3 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：EP2763175A3
公开(公告)日：2016-05-25
申请号：EP14152386.0
申请日：2014-01-24
申请人： Nichia Corporation
发明人： Emura, Keiji , Miyagi, Akihiro , Kitahama, Shun
IPC分类号： H01L27/15 , H01L33/20 , H01L33/38
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The present invention provides: a semiconductor light emitting element (10), having: an insulating substrate (1) having a plurality of convexes (2) on its surface; a plurality of light emitting element components (10a, 10b, 10c, 10d) that have semiconductor laminates that are laminated on the insulating substrate and are separated from one another by a groove (10e) that expose the convexes; and a plurality of connectors (27) that connect between the light emitting element components, the light emitting element components include a first light emitting element component and a second light emitting element component, the first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion (K) that protrudes toward the second light emitting element component, and the connectors include a first connector that has a shape that straddles the groove and that follows the convexes, and has a straight section.

4. 发明公开

EP2423985A3 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：EP2423985A3
公开(公告)日：2014-07-30
申请号：EP11178845.1
申请日：2011-08-25
申请人： Nichia Corporation
发明人： Tanaka, Hidetoshi , Emura, Keiji
IPC分类号： H01L33/38 , H01L33/00 , H01L33/44 , H01L33/22
摘要： A semiconductor light emitting element includes: a semiconductor layer (2); first electrodes (3) arranged in a staggered array on an upper surface of the semiconductor layer; and a second electrode (4) on a lower surface of the semiconductor layer. Each first electrode includes an external connection (3a), a first elongated portion (3b) which extends from the external connection toward a central region of the upper surface of the semiconductor layer, and a second elongated portion (3c) which extends from the external connection to a near-edge region of the semiconductor layer. In addition, the first electrodes are arrayed so that a near-tip part of the first elongated portion of each first electrode is opposed to a near-tip part of the first elongated portion of each of an adjacent one or ones of the first electrodes in a direction in which the first electrodes arranged, on the central region of the semiconductor layer.
摘要翻译：半导体发光元件包括：半导体层（2）; 在所述半导体层的上表面上以交错排列的方式配置的第一电极（3）和在半导体层的下表面上的第二电极（4）。每个第一电极包括外部连接（3a），从外部连接朝向半导体层的上表面的中心区域延伸的第一细长部分（3b）和从外部延伸的第二细长部分（3c）连接到半导体层的近边缘区域。此外，第一电极排列成使得每个第一电极的第一细长部分的近端部分与相邻的一个或多个第一电极中的每一个的第一细长部分的近端部分相对在半导体层的中心区域上布置第一电极的方向。

5. 发明授权

EP2423985B1 Semiconductor light emitting element 有权
公开(公告)号：EP2423985B1
公开(公告)日：2020-01-08
申请号：EP11178845.1
申请日：2011-08-25
申请人： Nichia Corporation
发明人： Tanaka, Hidetoshi , Emura, Keiji
IPC分类号： H01L33/38 , H01L33/00 , H01L33/44 , H01L33/22

6. 发明公开

EP3185293A1 LIGHT EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：EP3185293A1
公开(公告)日：2017-06-28
申请号：EP16206387.9
申请日：2016-12-22
申请人： NICHIA CORPORATION
发明人： Emura, Keiji , Inoue, Yoshiki , Sunda, Takamasa
IPC分类号： H01L25/075 , H01L33/40 , H01L33/46 , H01L33/48 , H01L33/62 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/64
摘要： A light emitting element (1;1A) includes a substrate (11); a plurality of semiconductor light emitting cells (101-108); a plurality of light reflective electrodes (13); an insulation layer that continuously covers lateral surfaces of the plurality of semiconductor light emitting cells (101-108), spaces between the plurality of semiconductor light emitting cells (101-108), lateral surfaces of the plurality of light reflective electrodes (13), and a portion of an upper surface of each of the plurality of light reflective electrodes (13); a plurality of wiring electrodes (141-149) that electrically connects the plurality of semiconductor light emitting cells (101-108) in series, and covers at least a portion of the lateral surfaces of the plurality of semiconductor light emitting cells (101-108) and the spaces between the plurality of semiconductor light emitting cells (101-108) via the insulation layer; and at least one light reflective metal layer (151-153;151) each of which covers at least a portion of the lateral surfaces of two adjacent ones of the plurality of semiconductor light emitting cells (101-108) and the space between said two adjacent ones of the plurality of semiconductor light emitting cells (101-108), via the insulation layer.
摘要翻译：发光元件（1; 1A）包括基板（11）; 多个半导体发光单元（101-108）; 多个光反射电极（13）; 连续地覆盖多个半导体发光单元（101-108）的侧表面的绝缘层，多个半导体发光单元（101-108）之间的空间，多个光反射电极（13）的侧表面，和所述多个光反射电极（13）中的每一个的上表面的一部分; 多个布线电极（141-149），其串联电连接所述多个半导体发光单元（101-108），并覆盖所述多个半导体发光单元（101-108）的至少一部分侧面）和所述多个半导体发光单元（101-108）之间的空间隔着所述绝缘层; 和至少一个光反射金属层（151-153; 151），每个光反射金属层覆盖多个半导体发光单元（101-108）中的两个相邻半导体发光单元（101-108）的至少一部分侧表面以及所述两个经由绝缘层，与多个半导体发光单元（101〜108）中的相邻的半导体发光单元相邻。

7. 发明公开

EP1953838A2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：EP1953838A2
公开(公告)日：2008-08-06
申请号：EP08150968.9
申请日：2008-02-01
申请人： Nichia Corporation
发明人： Sano, Masahiko , Sakamoto, Takahiko , Emura, Keiji , Kadan, Katsuyoshi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.
A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and a boundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer is provided.

8. 发明授权

EP1953838B1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：EP1953838B1
公开(公告)日：2017-07-19
申请号：EP08150968.9
申请日：2008-02-01
申请人： Nichia Corporation
发明人： Sano, Masahiko , Sakamoto, Takahiko , Emura, Keiji , Kadan, Katsuyoshi
IPC分类号： H01L33/42 , H01L33/02 , H01L33/38 , H01L33/44 , H01L33/40 , H01L33/46
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00

9. 发明公开

EP1953838A3 Semiconductor light emitting element 有权
标题翻译： Lichtemittierendes Halbleiterement
公开(公告)号：EP1953838A3
公开(公告)日：2014-01-08
申请号：EP08150968.9
申请日：2008-02-01
申请人： Nichia Corporation
发明人： Sano, Masahiko , Sakamoto, Takahiko , Emura, Keiji , Kadan, Katsuyoshi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/02 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.
A semiconductor light emitting element including a light emitting section, a first electrode, and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes being arranged on the first conductive type semiconductor layer and a second conductive type semiconductor layer of the light emitting section, respectively; and a light transmissive insulating film formed on at least one part of the second conductive type semiconductor layer; wherein the second electrode includes a first layer of a light transmissive conductive film for covering at least one part of the second conductive type semiconductor layer and a second layer which is arranged on at least one part of the light transmissive insulating film and which conducts to the first layer; a light reflecting part is formed on a surface side of the first layer, and a boundary region of the light transmissive insulating film and the semiconductor structure; and the second layer side surface of the light transmissive insulating film is distant from the semiconductor structure than the surface of the first layer is provided.
摘要翻译：本发明提供一种发光元件，其能够或实现低电阻，高输出，更高功率效率（1m / W），更高的批量生产率和更低成本的元件中的至少一个，使用透光电极布置在发光结构外部的电极。一种半导体发光元件，包括在包括第一和第二导电类型半导体层的半导体结构上的发光部分，第一电极和第二电极，所述第一和第二电极布置在第一导电类型半导体层上，第二电极布置在第二导电类型半导体层上导电型半导体层; 以及形成在所述第二导电类型半导体层的至少一部分上的透光绝缘膜; 其中所述第二电极包括用于覆盖所述第二导电类型半导体层的至少一部分的透光导电膜的第一层和布置在所述透光绝缘膜的至少一部分上的第二层，第一层; 光反射部分形成在第一层的表面侧，以及透光绝缘膜和半导体结构的边界区域; 并且提供透光绝缘膜的第二层侧表面比第一层的表面远离半导体结构。

10. 发明公开

EP2423985A2 Semiconductor light emitting element 有权
标题翻译： Lichtemittierendes Halbleiterement
公开(公告)号：EP2423985A2
公开(公告)日：2012-02-29
申请号：EP11178845.1
申请日：2011-08-25
申请人： Nichia Corporation
发明人： Tanaka, Hidetoshi , Emura, Keiji
IPC分类号： H01L33/38 , H01L33/00 , H01L33/44 , H01L33/22
摘要： A semiconductor light emitting element includes: a semiconductor layer (2); first electrodes (3) arranged in a staggered array on an upper surface of the semiconductor layer; and a second electrode (4) on a lower surface of the semiconductor layer. Each first electrode includes an external connection (3a), a first elongated portion (3b) which extends from the external connection toward a central region of the upper surface of the semiconductor layer, and a second elongated portion (3c) which extends from the external connection to a near-edge region of the semiconductor layer. In addition, the first electrodes are arrayed so that a near-tip part of the first elongated portion of each first electrode is opposed to a near-tip part of the first elongated portion of each of an adjacent one or ones of the first electrodes in a direction in which the first electrodes arranged, on the central region of the semiconductor layer.
摘要翻译：半导体发光元件包括：半导体层（2）; 在半导体层的上表面上以交错阵列排列的第一电极（3）和在半导体层的下表面上的第二电极（4）。每个第一电极包括外部连接（3a），从外部连接朝向半导体层的上表面的中心区域延伸的第一细长部分（3b）和从外部延伸的第二细长部分（3c）连接到半导体层的近边缘区域。此外，第一电极排列成使得每个第一电极的第一细长部分的近尖端部分与相邻的一个或多个第一电极中的每一个的第一细长部分的近端部分相对，第一电极在半导体层的中心区域上排列的方向。

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