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    • 4. 发明公开
    • Opto-electric device and method for manufacturing the same
    • Optoelektrische Vorrichtung und Verfahren zu deren Herstellung
    • EP2629347A1
    • 2013-08-21
    • EP12155869.6
    • 2012-02-17
    • Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
    • van den Brand, JeroenWilson, Joanne Sarahvan Mol, Antonius Maria BernardusHermes, Dorothee ChristineYoung, Edward Willem Albert
    • H01L51/52
    • H01L51/5256H01L33/62H01L51/5203H01L51/5212H01L51/5228H01L51/5234H01L51/5271H01L51/56
    • The opto-electric device (10) comprises an opto-electric layer structure (20) having an anode and a cathode layer (22, 24 resp.) as well as a opto-electric layer (26) arranged between said anode and cathode layers, and having a light-transmission side (28), the cathode layer of said anode and cathode layer being closest to said light-transmission side. A dual electrically conductive layer structure is (40) arranged at a side of said opto-electric layer structure opposite the light-transmission side, the dual electrically conductive layer structure having a first and a second electrically conductive layer (42, 44 resp.) mutually insulated by a first electrically insulating layer (46), the first electrically conductive layer of said first and second electrically conductive layer being closest to the opto-electric layer structure. A second electrically insulating layer (50) is arranged between the light emitting layer structure (20) and the dual electrically conductive layer structure (40), wherein the first electrically conductive layer (42) is electrically connected by at least a first transverse electrical conductor (62) through said second insulating layer with said anode layer (22) and said second electrically conductive layer (44) is electrically connected by at least a second transverse electrical conductor (64) through said first electrically insulating layer (46), said first electrically conductive layer (42), said second electrically insulating layer (50), said anode electrode layer (22) and said light emitting layer (26), with said cathode layer (24).
    • 光电装置(10)包括具有阳极和阴极层(22,24)的光电层结构(20)以及布置在所述阳极层和阴极层之间的光电层(26) ,并具有光透射侧(28),所述阳极和阴极层的阴极层最靠近所述光透射侧。 双重导电层结构(40)布置在所述光电层结构的与光透射侧相对的一侧,所述双重导电层结构具有第一和第二导电层(42,44) 由第一电绝缘层(46)互相绝缘,所述第一和第二导电层的第一导电层最靠近光电层结构。 第二电绝缘层(50)布置在发光层结构(20)和双重导电层结构(40)之间,其中第一导电层(42)通过至少第一横向电导体 (62)通过所述第二绝缘层与所述阳极层(22)和所述第二导电层(44)通过所述第一电绝缘层(46)的至少第二横向电导体(64)电连接,所述第一 导电层(42),所述第二电绝缘层(50),所述阳极电极层(22)和所述发光层(26)与所述阴极层(24)连接。
    • 6. 发明公开
    • Organic semiconductor device and method for manufacturing the same
    • Organistches Halbleiterbauelement und Verfahren zu seiner Herstellung
    • EP2249412A1
    • 2010-11-10
    • EP09159689.0
    • 2009-05-07
    • Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO
    • Wilson, Joanne SarahHermes, Dorothee ChristineRensing, Petrus Alexandervan Heck, Gerardus Titusvan Mol, Antonius Maria Bernardus
    • H01L51/52
    • H01L51/5253H01L27/3239H01L27/3283H01L51/5203H01L51/5221H01L2251/5361
    • A semiconductor device is disclosed comprising:
      - a first electrically conductive structure (10) that comprises at least a first electrode layer (12),
      - a second electrically conductive structure (20) that comprises at least a second electrode layer (24),
      - an active structure (30) that comprises at least a layer of an organic semiconducting material, the active structure being arranged between the first and the second electrically conductive structure (10, 20),
      - an first electrically insulating barrier structure (40) that comprises at least an electrically insulating barrier layer arranged between the first and the second electrically conductive structure,
      - a second electrically insulating barrier structure (50). The second electrically insulating barrier structure (50) extends over a part of the second electrically conductive structure (20) so that the second electrically conductive structure (20) extending laterally beyond the second electrically insulating barrier structure (50). The active structure (30) is encapsulated by an encapsulation comprising at least the first electrically conductive structure (10), the first electrically insulating barrier structure (40), the second electrically conductive structure (20) and the second electrically insulating barrier structure (50).
    • 公开了一种半导体器件,包括: - 至少包括第一电极层(12)的第一导电结构(10), - 至少包括第二电极层(24)的第二导电结构(20) 包括至少一层有机半导体材料的活性结构(30),所述活性结构布置在第一和第二导电结构(10,20)之间, - 第一电绝缘阻挡结构(40),其包括 至少一个布置在第一和第二导电结构之间的电绝缘阻挡层, - 第二电绝缘阻挡结构(50)。 第二电绝缘阻挡结构(50)在第二导电结构(20)的一部分上延伸,使得第二导电结构(20)横向延伸超过第二电绝缘阻挡结构(50)。 活性结构(30)由包括至少第一导电结构(10),第一电绝缘阻挡结构(40),第二导电结构(20)和第二电绝缘阻挡结构(50)的封装 )。