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1. 发明公开

EP2237320A1 METAL ELECTRODE AND SEMICONDUCTOR ELEMENT USING THE SAME 有权
标题翻译： METALLELEKTRODE UND HALBLEITERELEMENT DAMIT
公开(公告)号：EP2237320A1
公开(公告)日：2010-10-06
申请号：EP08858001.4
申请日：2008-12-05
申请人： National Institute for Materials Science
发明人： OHMORI, Kenji , CHIKYO, Toyohiro
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/423 , H01L29/49
CPC分类号： H01L29/7833 , H01L21/28088 , H01L29/1083 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： A metal electrode is used for a pair with a semiconductor so as to sandwich a high-dielectric constant thin film between the metal electrode and the semiconductor. A metal electrode 13 comprises a metal film 11 formed of a first electrode material, and a characteristic control film 10 containing a second electrode material. The characteristic control film 10 is formed between the high-dielectric constant thin film 9 and the metal film 11. C is added to the characteristic control film 10. The addition of C reduces the crystal grain diameter of the material constituting the characteristic control film 10, and suppresses fluctuation of a Vth (threshold voltage).
摘要翻译：金属电极与半导体成对使用，以将金属电极和半导体之间的高介电常数薄膜夹在中间。金属电极13包括由第一电极材料形成的金属膜11和包含第二电极材料的特性控制膜10。特性控制膜10形成在高介电常数薄膜9和金属薄膜11之间.C加到特性控制薄膜10中。加入C降低构成特性控制薄膜10的材料的晶粒直径并抑制Vth的波动（阈值电压）。

2. 发明公开

EP3584571A1 METHOD AND SYSTEM FOR PREVENTING DEW FORMATION AND LIGHT SCATTERING ASSOCIATED WITH DEW FORMATION 审中-公开
公开(公告)号：EP3584571A1
公开(公告)日：2019-12-25
申请号：EP18754010.9
申请日：2018-02-02
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro
IPC分类号： G01N27/416 , G01N27/30
摘要： The present invention is to provide a prevention method and a prevention system for preventing dew condensation and light scattering due to the dew condensation. According to one embodiment of the present invention, a fine liquid droplet capable of causing dew condensation is detected by a detection means for detecting a fine liquid droplet, and then the fine liquid droplet is removed on the basis of the detection. The detection means comprises a first thin wire made of a first metal, and a second thin wire made of a second metal or a semiconductor, the second metal is different from the first metal, the first thin wire and the second thin wire are disposed in juxtaposition with each other on an insulating substrate, and a spacing between the first thin wire and the second thin wire is in a range of 20 nm or more and 10000 nm or less. Further, provided is a prevention system including a detection means for detecting a fine liquid droplet, a removing means for removing the fine liquid droplet, and a control means for controlling the removing means on the basis of information from the detection means.

3. 发明公开

EP3054351A1 HIGHLY SENSITIVE MULTILAYER RESIST FILM AND METHOD FOR IMPROVING PHOTOSENSITIVITY OF RESIST FILM 有权
标题翻译：高灵敏度的多层保护膜和一种改善的保护膜放射敏感性
公开(公告)号：EP3054351A1
公开(公告)日：2016-08-10
申请号：EP14847270.7
申请日：2014-09-25
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro , NAKANE, Takayuki
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , G03F7/091 , G03F7/20 , G03F7/32 , H01L21/0274 , H01L21/0277 , H01L21/0278
摘要： A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

4. 发明公开

EP3591546A1 SEARCH METHOD, SEARCH DEVICE, AND SEARCH SYSTEM 审中-公开
公开(公告)号：EP3591546A1
公开(公告)日：2020-01-08
申请号：EP18761977.0
申请日：2018-02-07
申请人： National Institute for Materials Science
发明人： YOSHITAKE, Michiko , YAGYU, Shinjiro , CHIKYO, Toyohiro , KUWAJIMA, Isao
IPC分类号： G06F17/30
摘要： The present invention searches for, in order of priority, a combination of material property parameters having a significant relationship, from among arbitrary combinations of multiple material property parameters. The present invention comprises a database stored in a storage device, a graph generation step, a graph search step, and a prioritization step, wherein the database stores multiple pairs of material property parameters having mutual relationship; the graph generation step includes generating a graph in which the multiple material property parameters stored in the database are represented as nodes, and inter-node spaces corresponding to the respective material property parameter pairs each being stored as having a relationship therebetween are represented as edges; the graph search step includes searching the graph on the basis of a given search condition and presenting multiple related material properties or inter-material property relationship paths representing relationships between material properties; and the prioritization step includes obtaining, by using information about one or both of the nodes and the edges, priority for the presented multiple related material properties or inter-material property relationship paths, and outputting a result in the descending order of priority.

5. 发明公开

EP2911159A1 ADHESIVE BODY BETWEEN CONDUCTIVE POLYMER-METAL COMPLEX AND SUBSTRATE AND METHOD FOR FORMING ADHESIVE BODY, CONDUCTIVE POLYMER-METAL COMPLEX DISPERSION LIQUID, METHOD FOR MANUFACTURING AND APPLYING SAME, AND METHOD FOR FILLING HOLE USING CONDUCTIVE MATERIAL 审中-公开
标题翻译：之间的粘接的赔偿责任BODY，导电高分子金属络合物分散液，方法，为生产和用途形成体导电性高分子金属配合物和基底的方法，和方法填充孔使用导电材料
公开(公告)号：EP2911159A1
公开(公告)日：2015-08-26
申请号：EP13848557.8
申请日：2013-10-21
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro , HASHIMOTO, Yasuo , HORVATH, Barbara
IPC分类号： H01B1/00 , B05D1/26 , B05D5/12 , B32B27/00 , C08K3/08 , C08L65/00 , C09D17/00 , C09D201/00 , H01B5/14
CPC分类号： H05K1/095 , C08G73/0266 , C08G2261/3221 , C08G2261/3223 , C08G2261/43 , C08G2261/964 , C08K3/08 , C08L65/00 , C08L79/02 , C09D17/00 , C09D201/00 , C09J7/20 , C09J165/00 , C09J2205/102 , C09J2465/00 , H01B1/22 , H01L21/76898 , H01L23/49883 , H05K1/097 , H05K3/4069 , H05K2201/032 , Y10T428/24339
摘要： A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag + , Cu 2+ , Cu + and the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.
摘要翻译：导电性高分子，金属配合物变得简单且牢固地附着一基材的表面上：如PTFE。通过将含有单体，其提供一种导电性高分子，阴离子的溶液和金属离子：诸如Ag +，铜离子，Cu +和等向与具有用于激励电子能量，以在所要求的能量的光照射能够降低金属离子，：如紫外光，一个拨条件下，由此沉淀的导电性高分子，金属配合物作为分散在反应液中的水平。通过提供该分散液涂敷到各种基底，在所述分散液中的微粒复合物进入并与该基板的表面上的狭窄的孔相配合。其结果是，该复合物的沉淀形成的基材的表面上和基片可强烈粘附于海誓山盟。

6. 发明授权

EP2237320B1 METAL ELECTRODE AND SEMICONDUCTOR ELEMENT USING THE SAME 有权
标题翻译：金属电极和半导体元素
公开(公告)号：EP2237320B1
公开(公告)日：2014-03-19
申请号：EP08858001.4
申请日：2008-12-05
申请人： National Institute for Materials Science
发明人： OHMORI, Kenji , CHIKYO, Toyohiro
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/51
CPC分类号： H01L29/7833 , H01L21/28088 , H01L29/1083 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L2924/0002 , H01L2924/00

7. 发明公开

EP3470829A1 DEW POINT MEASURING METHOD AND DEW POINT MEASURING DEVICE 有权
公开(公告)号：EP3470829A1
公开(公告)日：2019-04-17
申请号：EP17810293.5
申请日：2017-06-06
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro
IPC分类号： G01N25/68 , G01N27/416
摘要： The purpose of the present invention is to realize a dew point measurement in which the generation of dew condensation is directly detected and the detection can be performed without using any optical system. In particular, the purpose of the present invention is to realize a dew point measuring device that is compact and has a high sensitivity. According to one embodiment of the present invention, a sudden change in current values before and after the dew point is detected by detecting the dew condensation to detect a galvanic current that flows due to a water droplet attached onto a surface of an insulating substrate on which thin wires of dissimilar metals are juxtaposed, and by controlling the temperature on the surface of the substrate. In this way, the dew point measurement in which the dew point can be directly measured and a measurement with simple configuration and high accuracy can be performed can be realized.

8. 发明授权

EP3054351B1 HIGHLY SENSITIVE MULTILAYER RESIST FILM AND METHOD FOR IMPROVING PHOTOSENSITIVITY OF RESIST FILM 有权
公开(公告)号：EP3054351B1
公开(公告)日：2019-01-30
申请号：EP14847270.7
申请日：2014-09-25
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , CHIKYO, Toyohiro , NAKANE, Takayuki
IPC分类号： G03F7/09 , G03F7/11 , H01L21/027

9. 发明授权

EP3173778B1 DRYNESS/WETNESS RESPONSE SENSOR HAVING HIGH-SPEED RESPONSE AND HIGH SENSITIVITY 有权
公开(公告)号：EP3173778B1
公开(公告)日：2019-06-12
申请号：EP15824136.4
申请日：2015-07-21
申请人： National Institute for Materials Science
发明人： KAWAKITA, Jin , SHINOHARA, Tadashi , CHIKYO, Toyohiro , NABATAME, Toshihide , OHI, Akihiko , OHKI, Tomoko
IPC分类号： G01N17/04 , G01N27/04 , G01N27/22 , G01N27/12

10. 发明公开

EP1376702A1 GATE AND CMOS STRUCTURE AND MOS STRUCTURE 审中-公开
标题翻译：在MOS-STRUKTUR的CMOS-STRUKTUR的GATE
公开(公告)号：EP1376702A1
公开(公告)日：2004-01-02
申请号：EP02705064.0
申请日：2002-03-01
申请人： National Institute for Materials Science
发明人： CHIKYO, Toyohiro , IMAI, Motoharu
IPC分类号： H01L29/49
CPC分类号： H01L21/28044 , H01L21/823828 , H01L21/823842 , H01L27/092 , H01L29/4933
摘要： Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 10 2 S·m -1 , nor more than 10 5 S·m -1 without impurities and has a band structure like that of a semiconductor.
摘要翻译：提供了一种新颖的栅极，CMOS结构和MOS结构，其具有低电阻和优异的可控性。栅极由金属间化合物半导体组成，其电导率不小于10 2 Sm，不大于10 5 Sm，不含杂质，具有带结构像半导体一样。

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