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1. 发明授权

EP1593154B1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MOS TRANSISTORS COMPRISING GATE ELECTRODES FORMED IN A PACKET OF METAL LAYERS DEPOSITED UPON ONE ANOTHER 有权转让
标题翻译：用于制造具有与栅电极的MOS晶体管的半导体部件中的连续沉积的金属层的包装方法被训练
公开(公告)号：EP1593154B1
公开(公告)日：2011-07-20
申请号：EP04702397.3
申请日：2004-01-15
申请人： NXP B.V. , IMEC
发明人： LANDER, Robert , HOOKER, Jacob, C. , WOLTERS, Robertus, A., M.
IPC分类号： H01L21/8234 , H01L21/28 , H01L29/49
CPC分类号： H01L21/321 , H01L21/28079 , H01L21/28088 , H01L21/823437 , H01L21/82345 , H01L29/4958 , H01L29/4966
摘要： Method of manufacturing a semiconductor device comprising MOS transistors having gate electrodes (15, 16) formed in a number of metal layers (8, 9, 13; 8, 12, 13) deposited upon one another. In this method, active silicon regions (4, 5) provided with a layer of a gate dielectric (7) and field-isolation regions (6) insulating these regions with respect to each other are formed in a silicon body (1). Then, a layer off a first metal (8) is deposited in which locally, at the location of a part of the active regions (4), nitrogen is introduced. On the layer of the first metal, a layer of a second metal (13) is then deposited, after which the gate electrodes are etched in the metal layers. Before nitrogen is introduced into the first metal layer, an auxiliary layer of a third metal (9) which is permeable to nitrogen is deposited on the first metal layer. Thus, the first metal layer can be nitrided locally without the risk of damaging the underlying gate dielectric. Substantial changes of the metal work function are possible, and a semiconductor device comprising NMOS and PMOS can be realized.

2. 发明授权

EP2109889B1 SENSING CIRCUIT FOR DEVICES WITH PROTECTIVE COATING 有权
标题翻译：检测电路有防护涂层单元
公开(公告)号：EP2109889B1
公开(公告)日：2012-10-10
申请号：EP08702537.5
申请日：2008-01-28
申请人： NXP B.V.
发明人： VAN GELOVEN, Johannes, A., J. , WOLTERS, Robertus, A., M. , VERHAEGH, Nynke
IPC分类号： H01L23/58
CPC分类号： H01L23/576 , H01L2924/0002 , H01L2924/3011 , H01L2924/00

3. 发明公开

EP2232412A2 TAMPER-RESISTANT SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THEREOF 审中-公开
标题翻译：操控安全半导体部件及其制造方法
公开(公告)号：EP2232412A2
公开(公告)日：2010-09-29
申请号：EP08807244.2
申请日：2008-07-29
申请人： NXP B.V.
发明人： VAN GELOVEN, Johannes, A., J. , TUYLS, Pim, T. , WOLTERS, Robertus, A., M. , VERHAEGH, Nynke
IPC分类号： G06K19/073
CPC分类号： H01L23/576 , H01L24/73 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/14 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to a tamper-resistant semiconductor device comprising a substrate (5) comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer (50, 50a, 50b) is arranged on a second side of the substrate (5) opposite to the first side. At least three through-substrate electrically-conductive connections (45) extend from the first side of the substrate (5) into the substrate (5) and in electrical contact with the electrically-conductive protection layer (50, 50a, 50b) on the second side of the substrate (5). A security circuit is arranged on the first side connected to the through-substrate electrically-conductive connections (45) and is arranged for measuring at least two resistance values (R12, R23, R34, R14, R13, R24) of the electrically-conductive protection layer (50, 50a, 50b) through the through-substrate electrically-conductive connections (45). The security circuit is further arranged for comparing the measured resistance values (R12, R23, R34, R14, R13, R24) with reference resistance values.

4. 发明公开

EP2205684A1 PARTICLE COMPRISING CORE AND SHELL AND APPLICATIONS THEREOF 审中-公开
标题翻译：具有核壳结构和需求粒子
公开(公告)号：EP2205684A1
公开(公告)日：2010-07-14
申请号：EP08839588.4
申请日：2008-10-13
申请人： NXP B.V.
发明人： FURUKAWA, Yukiko , WUNNICKE, Olaf , WOLTERS, Robertus, A., M. , VERHAEGH, Nynke
IPC分类号： C09C1/36 , C09C1/00 , C09C1/62 , C09C1/64 , C09C3/06 , C09K11/08 , B01J35/00
CPC分类号： C09C1/36 , B01J35/004 , B82Y30/00 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2006/40 , C09C1/00 , C09C1/627 , C09C1/642 , C09C3/063 , Y10T428/25 , Y10T428/2991 , Y10T428/2993
摘要： The present invention relates to particles comprising a core and a shell, a method of producing said particle, various uses of said particle as well as various products comprising said particle. The particle according to the invention may be used as photocatalyst, as antibacterial agent, as cleaning agent, as anti-fogging agent and as decomposing agent. Furthermore the particle is applicable as solar cells.

5. 发明授权

EP1451759B1 SEMICONDUCTOR DEVICE, CARD, METHODS OF INITIALIZING, CHECKING THE AUTHENTICITY AND THE IDENTITY THEREOF 有权
标题翻译：半导体部件，卡，用于初始化方法，并验证其真实性，其身份
公开(公告)号：EP1451759B1
公开(公告)日：2008-01-16
申请号：EP02803892.5
申请日：2002-11-28
申请人： NXP B.V.
发明人： DE JONGH, Petra, E. , ROKS, Edwin , WOLTERS, Robertus, A., M. , PEEK, Hermanus, L.
IPC分类号： G06K7/08 , G06K19/073 , H01L23/64 , H01L27/04
CPC分类号： H01L23/576 , G06K19/073 , G06K19/07372 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The semiconductor device (11) of the invention comprises a circuit that is covered by a passivation structure. It is provided with a first security element (12) that comprises a local area of the passivation structure and which has a first impedance. Preferably, a plurality of security elements (12) is present, whose the impedances differ. The semiconductor device (11) further comprises measuring means (4) for measuring an actual value of the first impedance, and a memory (7) comprising a first memory element (7A) for storing the actual value as a first reference value in the first memory element (7A).The semiconductor device (11) of the invention can be initialized by a method wherein the actual value is stored as the first reference value. Its authenticity can be checked by comparison of the actual value again measured and the first reference value.

6. 发明公开

EP1844501A1 FABRICATION OF A PHASE-CHANGE RESISTOR USING A BACKEND PROCESS 审中-公开
标题翻译：制作相变电阻使用一个后台程序
公开(公告)号：EP1844501A1
公开(公告)日：2007-10-17
申请号：EP06710708.6
申请日：2006-01-19
申请人： NXP B.V.
发明人： IN 'T ZANDT, Michael, A., A. , LANKHORST, Martijn, H., R. , WOLTERS, Robertus, A., M. , KWINTEN, Hans
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure (210, 215) surrounded by the conductive electrode portions (200, 240) at its lateral sides, and is formed in a CMOS backend process. An alternative is to form the device coupled directly to other circuit parts without the electrodes. In each case, there is a line of PCM which has a constant diameter or cross section, formed with reduced dimensions by using a spacer as a hard mask. The first contact electrode and the second contact electrode are electrically connected by a 'one dimensional' layer of the PCM. The contact resistance between the one-dimensional layer of PCM and the first contact electrode at the second contact electrode is lower than the resistance of a central or intervening portion of the line.

7. 发明授权

EP2232412B1 TAMPER-RESISTANT SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THEREOF 有权
公开(公告)号：EP2232412B1
公开(公告)日：2019-03-06
申请号：EP08807244.2
申请日：2008-07-29
申请人： NXP B.V.
发明人： VAN GELOVEN, Johannes, A., J. , TUYLS, Pim, T. , WOLTERS, Robertus, A., M. , VERHAEGH, Nynke
IPC分类号： G06K19/073 , H01L23/00

8. 发明授权

EP2203756B1 MAGNETIC FIELD SENSOR 有权
标题翻译：磁传感器
公开(公告)号：EP2203756B1
公开(公告)日：2011-04-13
申请号：EP08807981.9
申请日：2008-10-16
申请人： NXP B.V.
发明人： ZIEREN, Victor , WOLTERS, Robertus, A., M.
IPC分类号： G01R33/06 , H01L43/06
CPC分类号： G01R33/06 , G01R33/0088 , G01R33/066
摘要： The invention relates to a magnetic field sensor comprising a substrate having a first side (S1). The substrate comprises at the first side (S1) a silicon comprising semiconductor layer (P-SUB) which comprises a buried N-well (DNW). A bipolar transistor having an emitter region (PE+, NE+), a base region (PB+, NB+), and a first collector region (CLR1) and a second collector region, is provided in the silicon comprising semiconductor layer (P-SUB). The emitter region (PE+, NE+) is located at the first side (S1) above the buried N-well (DNW). According to the invention the bipolar transistor is arranged such that, in operation, a part of an emitter current (IEM) that traverses the base region (PB+, NB+) is distributed over the first and second collector regions (CLR1, CLR2) obtaining a first and a second collector current (ICL1, ICL2), wherein a difference between the first and second collector currents (ICL1, ICL2) is determined by a magnetic field component (B x, B z ) perpendicular to a current plane. A bipolar magneto-transistor structure is obtained which is compatible with triple-well technology and that is sensitive to magnetic fields in a direction perpendicular to the current plane. The magnetic field sensor is compatible with triple-well technology and has a high linearity and a high sensitivity. The invention further relates to an integrated circuit comprising such magnetic field sensor (Snsr) and a card provided with such integrated circuit.

9. 发明授权

EP1490902B1 SEMICONDUCTOR DEVICE WITH A PROTECTIVE SECURITY COATING AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：保护涂层和半导体部件端部安全用于生产
公开(公告)号：EP1490902B1
公开(公告)日：2010-08-11
申请号：EP03744942.8
申请日：2003-03-20
申请人： NXP B.V.
发明人： WOLTERS, Robertus, A., M. , DE JONGH, Petra, E. , DEKKER, Ronald
IPC分类号： H01L23/58 , H01L23/28 , G06K19/073
CPC分类号： H01L23/573 , G06K19/07372 , H01L23/28 , H01L27/02 , H01L2924/0002 , Y10S257/922 , H01L2924/00
摘要： The semiconductor device comprises a substrate (10) with a first (1) and an opposed second side (2), at which first side a plurality of transistors and interconnects is present, which are covered by a protective security covering (16), which device is further provided with bond pad regions (14). The protective security covering (16) comprises a substantially non-transparent and substantially chemically inert security coating (16), and the bond pad regions (14) are accessible from the second side of the substrate (10). The semiconductor device can be suitable made with a substrate transfer technique, in which a second substrate (24) is provided at the protective security covering (16).

10. 发明公开

EP2102905A1 METHOD OF MAKING AN INTERCONNECT STRUCTURE 审中-公开
标题翻译：一种用于生产的连接结构
公开(公告)号：EP2102905A1
公开(公告)日：2009-09-23
申请号：EP07849531.4
申请日：2007-12-31
申请人： NXP B.V.
发明人： DAAMEN, Roel , WOLTERS, Robertus, A., M. , MAAS, Martinus, P., M. , BANCKEN, Pascal , MICHELON, Julien, M., M.
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L21/76808 , H01L21/76835 , H01L21/76849 , H01L21/76867 , H01L2221/1031
摘要： A damascene process is described using a copper fill process to fill a trench (12). The copper fill (20) is started with a deposited seed layer which includes (5) copper and titanium. Some titanium migrates to the surface during the copper fill process. The structure is annealed in a nitrogen atmosphere which creates a self-aligned TiN barrier (24) at the surface of the copper fill (20). Air gaps (26) may be created in the same annealing process. The process may be used to form a multilayer structure.

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