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    • 1. 发明公开
    • MAGNETIC FIELD SENSOR
    • 磁场传感器
    • EP2203756A1
    • 2010-07-07
    • EP08807981.9
    • 2008-10-16
    • NXP B.V.
    • ZIEREN, VictorWOLTERS, Robertus, A., M.
    • G01R33/06H01L43/06
    • G01R33/06G01R33/0088G01R33/066
    • The invention relates to a magnetic field sensor comprising a substrate having a first side (S1). The substrate comprises at the first side (S1) a silicon comprising semiconductor layer (P-SUB) which comprises a buried N-well (DNW). A bipolar transistor having an emitter region (PE+, NE+), a base region (PB+, NB+), and a first collector region (CLR1) and a second collector region, is provided in the silicon comprising semiconductor layer (P-SUB). The emitter region (PE+, NE+) is located at the first side (S1) above the buried N-well (DNW). According to the invention the bipolar transistor is arranged such that, in operation, a part of an emitter current (IEM) that traverses the base region (PB+, NB+) is distributed over the first and second collector regions (CLR1, CLR2) obtaining a first and a second collector current (ICL1, ICL2), wherein a difference between the first and second collector currents (ICL1, ICL2) is determined by a magnetic field component (B x, B z ) perpendicular to a current plane. A bipolar magneto-transistor structure is obtained which is compatible with triple-well technology and that is sensitive to magnetic fields in a direction perpendicular to the current plane. The magnetic field sensor is compatible with triple-well technology and has a high linearity and a high sensitivity. The invention further relates to an integrated circuit comprising such magnetic field sensor (Snsr) and a card provided with such integrated circuit.
    • 本发明涉及一种磁场传感器,其包括具有第一侧(S1)的衬底。 衬底在第一侧(S1)包括包含埋入式N阱(DNW)的含硅半导体层(P-SUB)。 在含硅半导体层(P-SUB)中提供具有发射极区域(PE +,NE +),基极区域(PB +,NB +)以及第一集电极区域(CLR1)和第二集电极区域的双极型晶体管。 发射极区域(PE +,NE +)位于掩埋N阱(DNW)上方的第一侧(S1)。 根据本发明,双极晶体管被布置为使得在操作中,穿过基极区域(PB +,NB +)的发射极电流(IEM)的一部分分布在第一和第二集电极区域(CLR1,CLR2)上,从而获得 第一和第二集电极电流(ICL1,ICL2),其中第一和第二集电极电流(ICL1,ICL2)之差由垂直于当前平面的磁场分量(Bx,Bz)确定。 获得了与三阱技术兼容且对垂直于电流平面的方向上的磁场敏感的双极磁 - 晶体管结构。 磁场传感器兼容三阱技术,线性度高,灵敏度高。 本发明还涉及包括这种磁场传感器(Snsr)的集成电路和提供有这种集成电路的卡。
    • 6. 发明授权
    • MAGNETIC FIELD SENSOR
    • 磁传感器
    • EP2203756B1
    • 2011-04-13
    • EP08807981.9
    • 2008-10-16
    • NXP B.V.
    • ZIEREN, VictorWOLTERS, Robertus, A., M.
    • G01R33/06H01L43/06
    • G01R33/06G01R33/0088G01R33/066
    • The invention relates to a magnetic field sensor comprising a substrate having a first side (S1). The substrate comprises at the first side (S1) a silicon comprising semiconductor layer (P-SUB) which comprises a buried N-well (DNW). A bipolar transistor having an emitter region (PE+, NE+), a base region (PB+, NB+), and a first collector region (CLR1) and a second collector region, is provided in the silicon comprising semiconductor layer (P-SUB). The emitter region (PE+, NE+) is located at the first side (S1) above the buried N-well (DNW). According to the invention the bipolar transistor is arranged such that, in operation, a part of an emitter current (IEM) that traverses the base region (PB+, NB+) is distributed over the first and second collector regions (CLR1, CLR2) obtaining a first and a second collector current (ICL1, ICL2), wherein a difference between the first and second collector currents (ICL1, ICL2) is determined by a magnetic field component (B x, B z ) perpendicular to a current plane. A bipolar magneto-transistor structure is obtained which is compatible with triple-well technology and that is sensitive to magnetic fields in a direction perpendicular to the current plane. The magnetic field sensor is compatible with triple-well technology and has a high linearity and a high sensitivity. The invention further relates to an integrated circuit comprising such magnetic field sensor (Snsr) and a card provided with such integrated circuit.