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    • 1. 发明公开
    • MICROMACHINE SWITCH AND ITS PRODUCTION METHOD
    • MICROMASCHINEN-SCHALTER UND SEIN VERFAHRENFÜRDIE HERSTELLUNG。
    • EP1146533A1
    • 2001-10-17
    • EP99959908.7
    • 1999-12-20
    • NEC Corporation
    • SUZUKI, KenichiroMARUMOTO, Tsunehisa
    • H01H59/00B81B3/00B81C1/00
    • H01H59/0009B81B2201/014B81B2201/016B81C1/0015B81C2201/0133H01H1/20
    • A micro-machine switch in accordance with the present invention includes a supporter having a predetermined height relative to a surface of a substrate, a flexible cantilever projecting from the supporter in parallel with a surface of the substrate, and having a distal end facing a gap formed between two signal lines, a contact electrode formed on the cantilever, facing the gap, a lower electrode formed on the substrate in facing relation with a part of the cantilever, and an intermediate electrode formed on the cantilever in facing relation with the lower electrode. The micro-machine switch can operate at a lower drive voltage than a voltage at which a conventional micro-machine switch operates, and can enhance a resistance of an insulating film against a voltage.
    • 根据本发明的微型机器开关包括:相对于基板的表面具有预定高度的支撑件,从支撑件平行于基板的表面突出的柔性悬臂,并且具有面向间隙的远端 形成在两个信号线之间,形成在悬臂上的接触电极,面对间隙;与基板的一部分悬臂形成在基板上的下电极,以及形成在悬臂上的中间电极,与下电极 。 微机开关可以在比常规微机开关操作的电压低的驱动电压下工作,并且可以增强绝缘膜对电压的电阻。
    • 2. 发明公开
    • MICROMACHINE SWITCH AND METHOD OF MANUFACTURE THEREOF
    • 职业技能培训师协奏曲HERSTELLUNGSVERFAHREN
    • EP1176620A1
    • 2002-01-30
    • EP00922875.0
    • 2000-04-26
    • NEC Corporation
    • MARUMOTO, Tsunehisa
    • H01H59/00H01P1/12B81B3/00
    • H01P1/12H01G5/40H01H1/20H01H59/00H01H59/0009Y10T29/49155Y10T307/826
    • A micromachine switch for use in a millimeter wave circuit and a microwave circuit is simpler in structure than conventional micromachine switches. The micromachine switch has first and second high-frequency signal lines (1b, la), cantilever (11) fixed to an end of the first high-frequency signal line (1b) and extending to a position above second high-frequency signal line (1a), first insulating means (15) disposed on second high-frequency signal line (1a), second insulating means (14) disposed in an area where cantilever (11) and second high-frequency signal line (1a) confront each other, and first control signal line (2) connected between an end of second high-frequency signal line (1a) and first insulating means (15), for applying a control signal. When the control signal is applied to second high-frequency signal line (1a), cantilever (11) is attracted to second high-frequency signal line (1a), and connected to second high-frequency signal line (1a) via second insulating means (14) in a high-frequency fashion.
    • 用于毫米波电路和微波电路的微机械开关在结构上比传统的微机械开关更简单。 微机械开关具有固定在第一高频信号线(1b)的一端的第一和第二高频信号线(1b,1a),悬臂(11)并延伸到高于第二高频信号线 1a),设置在第二高频信号线(1a)上的第一绝缘装置(15),设置在悬臂(11)和第二高频信号线(1a)相对的区域中的第二绝缘装置(14) 以及连接在第二高频信号线(1a)的端部与第一绝缘装置(15)之间的第一控制信号线(2),用于施加控制信号。 当控制信号施加到第二高频信号线(1a)时,悬臂(11)被吸引到第二高频信号线(1a),并经由第二绝缘装置连接到第二高频信号线(1a) (14)。
    • 4. 发明公开
    • PHASED ARRAY ANTENNA AND ITS MANUFACTURING METHOD
    • VERFAHREN ZU IHRER HERSTELLUNG的潜力
    • EP1143562A1
    • 2001-10-10
    • EP99973554.1
    • 1999-11-22
    • NEC Corporation
    • MARUMOTO, TsunehisaIWATA, RyuichiARA, YouichiKUSAMITU, HidekiSUZUKI, Kenichiro
    • H01Q21/06H01Q23/00H01Q3/26
    • H01Q3/2605H01Q21/0087H01Q21/065
    • A relatively small phased array antenna is formed at a low cost even if the number of radiating elements increases in order to improve the gain. The phased array antenna has a multilayered structure in which a number of radiating elements (15), a phase shift unit (16) for changing the phase of an RF signal transmitted/received at each radiating element, and a distribution/synthesis unit (14) are formed on different layers. Signal lines (X1 - Xm) and scanning lines (Y1 - Yn) are wired on a phase control layer (35) to connect phase shift units to each other in a matrix. The signal lines and the scanning lines are matrix-driven by selection units (12X, 12Y) so that desired phase shift amounts are set to phase shift units located at the intersections of the signal and scanning lines. In addition, switches (17S) of a phase shifter (17) are formed at once on the phase control layer.
    • 即使辐射元件的数量增加以增加增益,也以低成本形成相对较小的相控阵天线。 相控阵天线具有多层结构,其中多个辐射元件(15),用于改变在每个辐射元件处发射/接收的RF信号的相位的相移单元(16)和分布/合成单元(14) )形成在不同的层上。 信号线(X1-Xm)和扫描线(Y1-Yn)被布线在相位控制层(35)上,以将矩阵中的相移单元相互连接。 信号线和扫描线由选择单元(12X,12Y)进行矩阵驱动,使得期望的相移量被设置为位于信号和扫描线的交点处的相移单元。 此外,移相器(17)的开关(17S)一次形成在相位控制层上。