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1. 发明公开

EP1623203A4 SENSOR PLATFORM USING A NON-HORIZONTALLY ORIENTED NANOTUBE ELEMENT 审中-公开
标题翻译：具有水平不定向纳米管元件传感器平台
公开(公告)号：EP1623203A4
公开(公告)日：2010-11-24
申请号：EP04809372
申请日：2004-05-12
申请人： NANTERO INC
发明人： SEGAL BRENT M , RUECKES THOMAS , VOGELI BERNHARD , BROCK DARREN , JAIPRAKASH VENKATACHALAM C , BERTIN CLAUDE L
IPC分类号： H01L29/66 , B81B3/00 , G01N27/00 , G01N27/02 , G01N27/12 , G01N27/22 , G01N27/414 , G01N33/487 , G01R15/00 , H01L21/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082

2. 发明公开

EP1792320A4 RESISTIVE ELEMENTS USING CARBON NANOTUBES 审中-公开
标题翻译：纳米碳管的电阻元件
公开(公告)号：EP1792320A4
公开(公告)日：2010-08-04
申请号：EP05857947
申请日：2005-09-20
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , WARD JONATHAN W
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22

3. 发明公开

EP1792149A4 RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS 有权
标题翻译：纳米管电路元件直接访问存储器
公开(公告)号：EP1792149A4
公开(公告)日：2009-05-20
申请号：EP05858157
申请日：2005-09-20
申请人： NANTERO INC
发明人： SEGAL BRENT M , RUECKES THOMAS , BERTIN CLAUDE L
IPC分类号： G11C14/00 , G11C13/02 , G11C23/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C14/00 , G11C23/00 , H01H1/0094
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control structure having a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said channel electrode and said output node. The electronic memory has cross-coupled first and second inverters. The input node of the first inverter is coupled to the set electrode of the first nanotube switching element and to the output node of the second nanotube switching element. The input node of the of the second inverter is coupled to the set electrode of the second nanotube switching element and to the output node of the first nanotube switching element; and the channel electrode is coupled to a channel voltage line. The release electrode of the first nanotube switching element is coupled to the release electrode of the second nanotube switching element and wherein both release electrodes are coupled to a release line. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.

4. 发明公开

EP1889260A4 MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE 审中-公开
标题翻译：与电阻NEUPROGRAMMIERBAREM碳纳米管文章存储器阵列
公开(公告)号：EP1889260A4
公开(公告)日：2009-12-09
申请号：EP06770130
申请日：2006-05-09
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , GUO FRANK , RUECKES THOMAS , KONSEK STEVEN L , MEINHOLD MITCHELL , STRASBURG MAX , SIVARAJAN RAMESH , HUANG X M HENRY
IPC分类号： G11C13/00 , G11C13/02
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79

5. 发明公开

EP1756954A4 RECEIVER CIRCUIT USING NANOTUBE-BASED SWITCHES AND TRANSISTORS 审中-公开
标题翻译：接收电路使用基于碳纳米管开关和晶体管
公开(公告)号：EP1756954A4
公开(公告)日：2009-02-18
申请号：EP05820729
申请日：2005-05-26
申请人： NANTERO INC
发明人： BERTIN CLAUDE L
IPC分类号： G11C13/02 , G11C23/00 , H04B1/16
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/17 , H01L51/0048 , H01L51/0591 , Y10S977/70
摘要： Receiver circuits using nanotube-based switches and transistors. A receiver circuit includes a differential input having a first and second input link, a differential output having a first and second output link, and first and second switching elements in electrical communication with the input links and the output links. Each switching element has an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. First and second MOS transistors are each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.

6. 发明公开

EP1776763A4 INTEGRATED NANOTUBE AND FIELD EFFECT SWITCHING DEVICE 有权
标题翻译： SCHALTVORRICHTUNG MIT INTEGRIERTERNANORÖHRCHEN-UND FELDEFFEKT-TECHNOLOGIE
公开(公告)号：EP1776763A4
公开(公告)日：2007-10-17
申请号：EP05856763
申请日：2005-05-26
申请人： NANTERO INC
发明人： BERTIN CLAUDE L
IPC分类号： H03K19/20 , H01H59/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , G11C2213/17 , H01H1/0094 , H03K17/545 , H03K19/08 , Y10S977/70 , Y10S977/94
摘要： Hybrid switching devices (10) integrate nanotube switching elements (20) with field effect devices (30), such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element (20) and a field modulatable semiconductor channel element (30). The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal (25), a control input terminal (40’), a second input terminal (40), and an output terminal (45). The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.
摘要翻译：混合开关器件（10）将纳米管开关元件（20）与诸如NFET和PFET的场效应器件（30）集成在一起。开关装置根据控制输入的相对状态形成并使信号输入到输出的导电通道变形。在本发明的实施例中，导电沟道包括纳米管沟道元件（20）和场可调制半导体沟道元件（30）。开关器件可以包括电串联布置的纳米管开关元件和场效应器件。根据本发明的一个方面，集成开关装置是具有信号输入端子（25），控制输入端子（40'），第二输入端子（40）和输出端子（45）的四端子装置，）。这些设备可能是非易失性的。这些器件可以构成混合NT-FET逻辑系列的基础，并可用于实现任何布尔逻辑电路。

7. 发明公开

EP1634296A4 NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME 审中-公开
标题翻译：不挥发机电场效应模块和电路，以便及其制造方法
公开(公告)号：EP1634296A4
公开(公告)日：2007-02-14
申请号：EP04754836
申请日：2004-06-09
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , RUECKES THOMAS , SEGAL BRENT M , VOGELI BERNHARD , BROCK DARREN K , JAIPRAKASH VENKATACHALAM C
IPC分类号： G11C23/00 , G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.
摘要翻译：下一个方面，一种场效应器件包括栅极，源极和漏极，与该源极和漏极之间的导电通道; 和具有控制端子相对应的纳米管开关，所述纳米管开关被定位通过所述导电通道，以控制电传导。在另一个方面，场效应器件包括具有栅极端子相对应的栅极; 具有源极端子对应的A源; 具有漏极端子相对应的漏极; 一个控制端; 和纳米管的开关元件设置在栅极，源极中的一个，并且漏极和其相应的终端和切换之间，响应于在所述控制端的电刺激和栅极，源极中的至少一个，和漏极端子，第一非之间 -volatile状态没有启用源极和漏极以及第二非易失性状态之间的电流流动没有禁用源极和漏极之间的电流流动。

8. 发明公开

EP1964188A4 CARBON NANOTUBES FOR THE SELECTIVE TRANSFER OF HEAT FROM ELECTRONICS 审中-公开
标题翻译：纳米碳管电子设备的选择性传热
公开(公告)号：EP1964188A4
公开(公告)日：2010-06-16
申请号：EP06851819
申请日：2006-09-05
申请人： NANTERO INC
发明人： WARD JONATHAN W , BERTIN CLAUDE L , SEGAL BRENT M
IPC分类号： H01L23/34
CPC分类号： H01L23/373 , H01L23/433 , H01L24/28 , H01L24/31 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/73253 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/14 , Y10S977/80 , H01L2924/00 , H01L2224/05599
摘要： Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir.

9. 发明公开

EP2057683A4 MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS 审中-公开
标题翻译：存储器元件与交集开关及其阵列具有非易失性碳纳米管BLOCKS
公开(公告)号：EP2057683A4
公开(公告)日：2010-03-10
申请号：EP07840799
申请日：2007-08-08
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , HUANG X M HENRY , RUECKES THOMAS , SIVARAJAN RAMESH
IPC分类号： B28B1/00
CPC分类号： H01L51/0587 , B82Y10/00 , G11C11/56 , G11C13/0064 , G11C13/0069 , G11C13/025 , G11C14/00 , G11C17/16 , G11C29/86 , G11C2013/0076 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048

10. 发明公开

EP2057633A4 NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME 有权
标题翻译：不挥发碳纳米管二极管和生产非挥发性碳纳米管块和系统，其与过程
公开(公告)号：EP2057633A4
公开(公告)日：2009-11-25
申请号：EP07840788
申请日：2007-08-08
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , RUECKES THOMAS , HUANG X M HENRY , SIVARAJAN RAMESH , GHENCIU ELIODOR G , KONSEK STEVEN L , MEINHOLD MITCHELL
IPC分类号： G11C13/02
CPC分类号： H01L51/0587 , B82Y10/00 , G11C11/56 , G11C13/0064 , G11C13/0069 , G11C13/025 , G11C14/00 , G11C17/16 , G11C29/86 , G11C2013/0076 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048

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