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1. 发明授权

EP2289104B1 DIODES, AND METHODS OF FORMING DIODES 有权转让
公开(公告)号：EP2289104B1
公开(公告)日：2018-12-12
申请号：EP09767247.1
申请日：2009-05-21
申请人： Micron Technology, Inc.
发明人： SANDHU, Gurtej, S. , MOULI, Chandra
IPC分类号： H01L29/872 , H01L21/329 , H01L29/06
CPC分类号： H01L29/66151 , B82Y10/00 , H01L21/28 , H01L21/283 , H01L28/90 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/08 , H01L29/417 , H01L29/66143 , H01L29/872 , H01L29/88 , H01L45/00
摘要： Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

2. 发明授权

EP2279523B1 RESISTANCE SWITCHING MEMORY CELL 有权
标题翻译：电阻切换存储单元
公开(公告)号：EP2279523B1
公开(公告)日：2017-12-13
申请号：EP09751110.9
申请日：2009-04-29
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/145 , G11C11/02 , G11C13/0002 , G11C13/003 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L27/2418 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode including metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

3. 发明公开

EP2289104A2 DIODES, AND METHODS OF FORMING DIODES 有权转让
标题翻译：二极管和方法的形成二极管
公开(公告)号：EP2289104A2
公开(公告)日：2011-03-02
申请号：EP09767247.1
申请日：2009-05-21
申请人： Micron Technology, Inc.
发明人： SANDHU, Gurtej, S. , MOULI, Chandra
IPC分类号： H01L29/861
CPC分类号： H01L29/66151 , B82Y10/00 , H01L21/28 , H01L21/283 , H01L28/90 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/08 , H01L29/417 , H01L29/66143 , H01L29/872 , H01L29/88 , H01L45/00
摘要： Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

4. 发明公开

EP2279523A1 MEMORY CELLS, MEMORY CELL CONSTRUCTIONS AND MEMORY CELL PROGRAMMING METHODS 有权
标题翻译：电阻变存储器
公开(公告)号：EP2279523A1
公开(公告)日：2011-02-02
申请号：EP09751110.9
申请日：2009-04-29
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/145 , G11C11/02 , G11C13/0002 , G11C13/003 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L27/2418 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/146
摘要： Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.

5. 发明公开

EP2067168A2 REDUCED LEAKAGE DRAM MEMORY CELLS WITH VERTICALLY ORIENTED NANORODS AND MANUFACTURING METHODS THEREFOR 有权
标题翻译： DRAM存储单元泄漏电流降低具有垂直取向的纳米棒
公开(公告)号：EP2067168A2
公开(公告)日：2009-06-10
申请号：EP07838585.3
申请日：2007-09-20
申请人： Micron Technology, Inc.
发明人： SANDHU, Gurtej, S. , MOULI, Chandra
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/06 , H01L29/78
CPC分类号： H01L27/108 , B82Y10/00 , G11C11/24 , H01L27/10808 , H01L27/10844 , H01L27/10873 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42392 , H01L29/78642 , H01L51/057
摘要： Methods and structures are described for reducing leakage currents in semiconductor memory storage cells. Vertically oriented nanorods (403) may be used in the channel region of an access transistor (400). The nanorod diameter can be made small enough to cause an increase in the electronic band gap energy in the channel region of the access transistor, which may serve to limit channel leakage currents in its off -state. In various embodiments, the access transistor may be electrically coupled to a double-sided capacitor (425). Memory devices according to embodiments of the invention, and systems including such devices are also disclosed.

6. 发明授权

EP1779425B1 MEMORY DEVICES, TRANSISTORS, MEMORY CELLS, AND METHODS OF MAKING SAME 有权
标题翻译：存储设备，晶体管，存储电池及其制备方法
公开(公告)号：EP1779425B1
公开(公告)日：2012-10-03
申请号：EP05803899.3
申请日：2005-07-25
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H01L21/82 , H01L27/105 , H01L27/06
CPC分类号： H01L29/66666 , H01L21/8213 , H01L27/105 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/1054 , H01L29/1608 , H01L29/165 , H01L29/41783 , H01L29/4236 , H01L29/7827 , H01L29/785 , Y10S438/931

7. 发明公开

EP2150978A1 SEMICONDUCTOR CONSTRUCTIONS, ELECTRONIC SYSTEMS, AND METHODS OF FORMING CROSS-POINT MEMORY ARRAYS 审中-公开
标题翻译： HALBLEITERKONSTRUKTIONEN，ELEKTRONISCHE SYSTEME UND VERFAHREN ZUR BILDUNG VON CROSSPOINT-SPEICHERARRAYS
公开(公告)号：EP2150978A1
公开(公告)日：2010-02-10
申请号：EP08733169.0
申请日：2008-04-08
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： H01L27/102 , G11C13/00 , H01L27/24 , H01L21/822 , H01L27/06
CPC分类号： H01L27/1021 , G11C13/0002 , G11C2213/71 , G11C2213/72 , G11C2213/74 , H01L27/2418 , H01L27/2481
摘要： The present application concerns vertical stacks of memory units (14, 16, 18), with individual memory units each having a memory element (28), a wordline (22), a bitline (24) and at least one diode (26). The memory units may correspond to cross-point memory, and the diodes may correspond to band-gap engineered diodes containing two or more dielectric layers sandwiched between metal layers. Tunneling properties of the dielectric materials and carrier injection properties of the metals may be tailored to engineer desired properties into the diodes. The diodes may be placed between the bitlines and the memory elements, or may be placed between the wordlines and memory elements. Some embodiments include methods of forming cross-point memory arrays. The memory arrays may contain vertical stacks- of memory unit cells, with individual unit cells containing cross-point memory and at least one diode, and adjacent memory units being spaced from one another by a passivation material (20).
摘要翻译：一些实施例包括存储器单元的垂直堆叠，其中各个存储器单元各自具有存储元件，字线，位线和至少一个二极管。存储单元可以对应于交叉点存储器，并且二极管可以对应于包含夹在金属层之间的两个或多个电介质层的带隙工程二极管。介电材料的隧道性能和金属的载流子注入性能可以被调整为将所需的性质设计到二极管中。二极管可以放置在位线和存储器元件之间，或者可以放置在字线和存储元件之间。一些实施例包括形成交叉点存储器阵列的方法。存储器阵列可以包含存储单元单元的垂直堆叠，其中单个单元单元包含交叉点存储器和至少一个二极管。

8. 发明公开

EP1974233A2 SEMICONDUCTOR CONSTRUCTIONS, METHODS OF FORMING SEMICONDUCTOR CONSTRUCTIONS, LIGHT-CONDUCTING CONDUITS, AND OPTICAL SIGNAL PROPAGATION ASSEMBLIES 有权
标题翻译： LIGHT组织通道的
公开(公告)号：EP1974233A2
公开(公告)日：2008-10-01
申请号：EP06845726.6
申请日：2006-12-15
申请人： Micron Technology, Inc.
发明人： MOULI, Chandra
IPC分类号： G02B6/10
CPC分类号： G02B6/10 , H01S3/0632 , H01S3/0637
摘要： The invention includes optical signal conduits having rare earth elements incorporated therein. The optical signal conduits can, for example, contain rare earth elements incorporated within a dielectric material matrix. For instance, erbium or cerium can be within silicon nanocrystals dispersed throughout dielectric material of optical signal conduits. The dielectric material can define a path for the optical signal, and can be wrapped in a sheath which aids in keeping the optical signal along the path. The sheath can include any suitable barrier material, and can, for example, contain one or more metallic materials. The invention also includes methods of forming optical signal conduits, with some of such methods being methods in which the optical signal conduits are formed to be part of semiconductor constructions.

9. 发明公开

EP1661184A1 SUPRESSION OF DARK CURRENT IN A PHOTOSENSOR FOR IMAGING 有权
标题翻译：录音设备应用抑制暗电流
公开(公告)号：EP1661184A1
公开(公告)日：2006-05-31
申请号：EP04809647.3
申请日：2004-09-01
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/146 , H01L27/14601 , H01L27/1463 , H01L27/14689 , H01L27/148
摘要： A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.

10. 发明公开

EP1636985A1 METHOD AND APPARATUS FOR REDUCING EFFECTS OF DARK CURRENT AND DEFECTIVE PIXELS IN AN IMAGING DEVICE 有权
标题翻译：方法和装置以降低暗电流和缺陷像素的效果在图像设置
公开(公告)号：EP1636985A1
公开(公告)日：2006-03-22
申请号：EP04755885.3
申请日：2004-06-24
申请人： MICRON TECHNOLOGY, INC.
发明人： MOULI, Chandra
IPC分类号： H04N5/16 , H04N5/217
CPC分类号： H04N5/335 , H04N5/361 , H04N5/367
摘要： A method and apparatus for identifying and compensating for the effects of defective pixels in high resolution digital cameras having image processing apparatus. The apparatus includes a storage system for storing data corresponding to either a dark current reference image and a white reference image and at least one actual image captured by a pixel array, and at least one processor coupled to the storage system for compensating the data corresponding to the actual image based upon the stored data. The method includes capturing and storing both dark and white reference images as well as capturing and storing actual images, identifying pixels that are affected by dark current or are defective pixels, reading data corresponding to pixels of an actual image affected by dark current or that are defective from the storage system and compensating the affected pixels.

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