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1. 发明公开

EP3082167A4 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HALBLEITERBAUELEMENTHERSTELLUNGSVERFAHREN
公开(公告)号：EP3082167A4
公开(公告)日：2017-08-02
申请号：EP13898991
申请日：2013-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWASE YUSUKE , KANADA KAZUNORI , MINATO TADAHARU
IPC分类号： H01L29/739 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/0415 , H01L21/26513 , H01L21/324 , H01L29/0821 , H01L29/0847 , H01L29/167 , H01L29/66333

2. 发明公开

EP1050908A4 INSULATING GATE TYPE BIPOLAR SEMICONDUCTOR DEVICE 失效
标题翻译：双极型半导体装置的绝缘栅
公开(公告)号：EP1050908A4
公开(公告)日：2006-08-23
申请号：EP98900704
申请日：1998-01-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINATO TADAHARU
IPC分类号： H01L29/739 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7397
摘要： An insulating gate type bipolar semiconductor device which is constituted so that an electrical resistance generated between an emitter electrode and a point near a gate electrode in an emitter impurity area can assume a prescribed value independently of a distance to the emitter impurity area which is in direct contact with the emitter electrode so as to expand a load short-circuit safe operating area without sacrificing the forward voltage drop and switching characteristic of the semiconductor device.

3. 发明公开

EP2966671A4 LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体分量激光退火和方法
公开(公告)号：EP2966671A4
公开(公告)日：2017-01-25
申请号：EP13876834
申请日：2013-03-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KANADA KAZUNORI , MINATO TADAHARU , KAWASE YUSUKE
IPC分类号： H01L21/268 , B23K26/0622 , B23K26/073 , B23K26/082 , H01L21/20
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0622 , B23K26/0732 , B23K26/082 , B23K26/0853 , H01L21/324 , H01L29/66333
摘要： A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.

4. 发明公开

EP1363332A4 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权转让
标题翻译： HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP1363332A4
公开(公告)日：2006-08-16
申请号：EP01906190
申请日：2001-02-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINATO TADAHARU , NITTA TETSUYA
IPC分类号： H01L29/78 , H01L21/265 , H01L21/266 , H01L21/336 , H01L29/06
CPC分类号： H01L29/7824 , H01L21/26586 , H01L21/266 , H01L29/0619 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0834 , H01L29/66712 , H01L29/7802 , H01L29/7823
摘要： A semiconductor device has a pn repetition structure in which a structure having a p-type impurity region (4) and an n-type drift region (3) is repeated two or more times. Alow concentration region that is either the p-type impurity region (4) or the n-type drift region (3) located at an outermost portion of the pn repetition structure have the lowest impurity concentration or the smallest amount of overall effective charge among all of the p-type impurity regions (4) and the n-type drift regions (3) that constitute the pn repetition structure. With this structure, the main breakdown voltage of, especially, a power semiconductor device having a device breakdown voltage of a wide range of 20 6,000V utilizing three-dimensional multiple RESURF principle can be improved, and the trade-off relation between the main breakdown voltage and the ON resistance can also be improved. As a result, the semiconductor device of low power consumption, small chip size, and low cost is fabricated. Besides, by adopting trenches of DLT (dotted line trench) structure and using a corresponding manufacturing method, a semiconductor device of further lower cost and better yield can be fabricated.
摘要翻译：半导体器件具有pn重复结构，其中具有p型杂质区（4）和n型漂移区（3）的结构重复两次或更多次。作为位于pn重复结构的最外部分的p型杂质区域（4）或n型漂移区域（3）的低浓度区域具有最低的杂质浓度或总体有效电荷的最小量构成pn重复结构的p型杂质区域（4）和n型漂移区域（3）。利用这种结构，可以改善利用三维多重RESURF原理的器件击穿电压宽范围为20-6,000V的功率半导体器件的主击穿电压，并且主击穿之间的折衷关系电压和导通电阻也可以得到改善。结果，制造了低功耗，小芯片尺寸和低成本的半导体器件。此外，通过采用DLT（虚线沟槽）结构的沟槽并使用相应的制造方法，可以制造成本更低且成品率更高的半导体器件。

5. 发明公开

EP1026749A4 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法SAME
公开(公告)号：EP1026749A4
公开(公告)日：2002-02-06
申请号：EP98933904
申请日：1998-07-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： NITTA TETSUYA , MINATO TADAHARU , UENISI AKIO
IPC分类号： H01L21/265 , H01L21/336 , H01L29/06 , H01L29/423 , H01L29/78 , H01L29/861 , H01L29/872 , H01L21/329
CPC分类号： H01L29/0634 , H01L21/26586 , H01L29/0649 , H01L29/0653 , H01L29/42368 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate has a first main surface with a plurality of trenches 5a sandwiching a region in which p and n diffusions regions 2 and 3 are formed to provide a p-n junction along the depth of the trenches. P diffusion region 2 has a doping concentration profile provided by a p dopant diffused from a sidewall surface of one trench 5a, and n diffusion region 3 has a doping concentration profile provided by an n dopant diffused from a sidewall surface of the other trench 5a. A heavily doped n substrate region 1 is provided at a second main surface side of p and n diffusion regions 2 and 3. A depth Ld of trench 5a from the first main surface is greater than a depth Nd of p and n diffusion regions 2, 3 from the first main surface by at least a diffusion length L of the p dopant in p diffusion region 2 or the n dopant in n diffusion region 3 in manufacturing the semiconductor device. A high withstand voltage and low ON-resistance semiconductor device can thus be obtained.

6. 发明公开

EP2006894A4 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： HALBLEITERBAUELEMENT UND PROZESS ZU SEINER HERSTELLUNG
公开(公告)号：EP2006894A4
公开(公告)日：2009-05-27
申请号：EP06714608
申请日：2006-02-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINATO TADAHARU , YAMAMOTO HIDEKAZU
IPC分类号： H01L21/322 , H01L21/329 , H01L21/331 , H01L21/336 , H01L29/739 , H01L29/744 , H01L29/78 , H01L29/861
CPC分类号： H01L21/3221 , H01L29/66348 , H01L29/7397
摘要： Gettering layer (3a) is formed on the reverse side of silicon substrate (1) after initiation of device production process. Thereafter, gate (5) of MOS structure is formed on the main surface of the silicon substrate (1), and the gettering layer (3a) is removed. In the formation of the gate architecture of the MOS structure according to the above processing, any dissolved oxygen contained in the silicon substrate (1) is captured by the gettering layer (3a) to thereby lower the concentration of dissolved oxygen in the silicon substrate (1). As a result, there can be attained lowering of the concentration of dissolved oxygen in the silicon substrate (1) and thus desirable device characteristics.
摘要翻译：在器件生产过程开始后，吸杂层（3a）形成在硅衬底（1）的背面。之后，在硅衬底（1）的主表面上形成MOS结构的栅极（5），并去除吸杂层（3a）。在根据上述处理形成MOS结构的栅极结构时，吸收层（3a）捕获硅衬底（1）中包含的任何溶解氧，从而降低硅衬底中溶解氧的浓度（ 1）。结果，可以降低硅衬底（1）中溶解氧的浓度，从而降低所希望的器件特性。

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