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1. 发明公开

EP3188236A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME 审中-公开
标题翻译：薄膜晶体管衬底和使用相同的显示
公开(公告)号：EP3188236A1
公开(公告)日：2017-07-05
申请号：EP16176330.5
申请日：2016-06-27
申请人： LG Display Co., Ltd.
发明人： NOH, Soyoung , JEON, Jinchae , CHOI, Seungchan , LEE, Junho , LEE, Youngjang , RYU, Sungbin , KIM, Kitae , CHO, Bokyoung , YOON, Jeanhan , CHUNG, Uijin , LEE, Jihye , KIM, Eunsung , SHIN, Hyunsoo , MOON, Kyeongju , KIM, Hyojin , KIM, Wonkyung , LEE, Jeihyun , JE, Soyeon
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1248 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1288 , H01L27/3258 , H01L27/3262 , H01L28/60 , H01L29/41733 , H01L29/78675 , H01L29/7869
摘要： The present disclosure relates to a thin film transistor substrate having two different type thin film transistors on the same substrate, and a display using the same. The present disclosure suggests a thin film transistor substrate comprising: a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposing the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.
摘要翻译：本公开涉及在同一衬底上具有两个不同类型的薄膜晶体管的薄膜晶体管衬底以及使用该薄膜晶体管衬底的显示器。本公开提出了一种薄膜晶体管基板，包括：基板，第一薄膜晶体管，第二薄膜晶体管，第一存储电容器电极，氧化物层，氮化物层，第二存储电容器电极，平面层和像素电极。第一薄膜晶体管设置在基板上的第一区域中。第二薄膜晶体管设置在基板上的第二区域中。第一存储电容器电极设置在衬底上的第三区域中。氧化物层覆盖第一薄膜晶体管和第二薄膜晶体管，并且暴露第一存储电容器电极。氮化物层设置在氧化物层上并覆盖第一存储电容器电极。第二存储电容器电极与氮化物层上的第一存储电容器电极重叠。平面层覆盖第一薄膜晶体管，第二薄膜晶体管和第二存储电容器电极。像素电极设置在平面层上。

2. 发明公开

EP4102565A3 DISPLAY DEVICE 审中-公开
公开(公告)号：EP4102565A3
公开(公告)日：2022-12-28
申请号：EP22188096.6
申请日：2016-11-24
申请人： LG Display Co., Ltd.
发明人： MOON, Kyeongju , NOH, Soyoung , SHIN, Hyunsoo , KIM, Wonkyung
IPC分类号： H01L27/12 , H01L27/32
摘要： A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

3. 发明公开

EP3086370A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管衬底及其制造方法
公开(公告)号：EP3086370A1
公开(公告)日：2016-10-26
申请号：EP16166197.0
申请日：2016-04-20
申请人： LG Display Co., Ltd.
发明人： SHIN, Hyunsoo , CHUNG, Ujin
IPC分类号： H01L27/12
摘要： A thin film transistor substrate includes a substrate; a first thin film transistor on the substrate and including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor on the substrate and including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; an intermediate insulating layer on the first gate electrode and the second gate electrode and under the oxide semiconductor layer; and a dummy layer between the first source electrode and the intermediate insulating layer and between the first drain electrode and the intermediate insulating layer, wherein the dummy layer is formed of a same material as the oxide semiconductor layer.
摘要翻译：薄膜晶体管基板包括基板; 第一薄膜晶体管，所述第一薄膜晶体管位于所述衬底上并且包括多晶半导体层，所述多晶半导体层上的第一栅电极，第一源电极和第一漏电极; 第二薄膜晶体管，所述第二薄膜晶体管在所述衬底上并且包括第二栅电极，在所述第二栅电极上的氧化物半导体层，第二源电极和第二漏电极; 在所述第一栅电极和所述第二栅电极上以及所述氧化物半导体层下方的中间绝缘层; 以及在第一源电极和中间绝缘层之间以及在第一漏电极和中间绝缘层之间的虚设层，其中虚设层由与氧化物半导体层相同的材料形成。

4. 发明公开

EP4102565A2 DISPLAY DEVICE 审中-公开
公开(公告)号：EP4102565A2
公开(公告)日：2022-12-14
申请号：EP22188096.6
申请日：2016-11-24
申请人： LG Display Co., Ltd.
发明人： MOON, Kyeongju , NOH, Soyoung , SHIN, Hyunsoo , KIM, Wonkyung
IPC分类号： H01L27/12 , H01L27/32
摘要： A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

5. 发明公开

EP3174097A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME 有权
标题翻译：薄膜晶体管衬底和使用相同的显示
公开(公告)号：EP3174097A1
公开(公告)日：2017-05-31
申请号：EP16200472.5
申请日：2016-11-24
申请人： LG Display Co., Ltd.
发明人： MOON, Kyeongju , NOH, Soyoung , SHIN, Hyunsoo , KIM, Wonkyung
IPC分类号： H01L27/12
CPC分类号： H01L29/78606 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2201/121 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/3262 , H01L29/78633 , H01L29/78675 , H01L29/7869
摘要： A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.
摘要翻译：薄膜晶体管基板包括：第一薄膜晶体管，设置为具有多晶半导体层，第一栅电极在多晶半导体层上，第一源电极和第一漏电极; 在多晶半导体层和第一栅电极之间的第一栅绝缘层; 第二薄膜晶体管，所述第二薄膜晶体管设置在所述第一栅电极上，所述氧化物半导体层上的第二栅电极，第二源电极和第二漏电极上具有氧化物半导体层; 中间绝缘层，设置在第一栅电极上并且在氧化物半导体层下; 以及在所述中间绝缘层上并且在所述第一源电极，所述第一漏电极和所述第二栅电极下方的第二栅绝缘层。

6. 发明授权

EP3086370B1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：EP3086370B1
公开(公告)日：2019-10-30
申请号：EP16166197.0
申请日：2016-04-20
申请人： LG Display Co., Ltd.
发明人： SHIN, Hyunsoo , CHUNG, Ujin
IPC分类号： H01L27/12 , H01L29/786

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