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2. 发明公开

EP2999012A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：EP2999012A1
公开(公告)日：2016-03-23
申请号：EP15186149.9
申请日：2015-09-22
申请人： Stanley Electric Co., Ltd.
发明人： YAMANE, Takayoshi , LIANG, Ji-Hao , KUMAGAI, Mitsuyasu , IDE, Shunya
IPC分类号： H01L33/02 , H01L33/06
CPC分类号： H01L33/06 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0259 , H01L33/02 , H01L33/025 , H01L33/20 , H01L33/32
摘要： A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer (14A) formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer (IW(n)) and barrier layer (IB(n)) laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion (IW(n)) and the embedded barrier portion is configured such that a second apex angle (y1) of the embedded well portion is smaller than a first apex angle (x1) of the embedded barrier portion (IB(n)) wherein the embedded well portion is subsequently formed on the embedded barrier portion.
摘要翻译：半导体发光元件包括：形成在第一半导体层上并具有金字塔形凹坑的凹坑形成层; 形成在凹坑形成层上并具有形成为嵌入凹坑的嵌入部分的有源层（14A）。有源层具有交替层叠至少一对阱层（IW（n））和势垒层（IB（n））的多量子阱结构。嵌入部分分别具有至少一个对应于阱层的嵌入阱部分和至少一个对应于势垒层的嵌入屏障部分。嵌入式阱部分（IW（n））和嵌入式屏障部分中的每一个被配置为使得嵌入式阱部分的第二顶角（y1）小于嵌入式屏障部分（IB）的第一顶角（x1）（n）），其中嵌入的阱部分随后形成在嵌入的阻挡部分上。

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