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1. 发明公开

EP1739726A4 BIPOLAR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：双极半导体元件及其制造方法
公开(公告)号：EP1739726A4
公开(公告)日：2009-08-26
申请号：EP05721512
申请日：2005-03-25
申请人： KANSAI ELECTRIC POWER CO , CENTRAL RES INST ELECT
发明人： NAKAYAMA KOJI , SUGAWARA YOSHITAKA , TSUCHIDA HIDEKAZU , KAMATA ISAHO , MIYANAGI TOSHIYUKI , NAKAMURA TOMONORI
IPC分类号： H01L21/20 , H01L21/04 , H01L21/205 , H01L21/302 , H01L21/331 , H01L21/336 , H01L29/73 , H01L29/737 , H01L29/74 , H01L29/78 , H01L29/861
CPC分类号： H01L29/8613 , H01L21/02019 , H01L21/02024 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Production of a bipolar semiconductor device having at least part of a region wherein at current passage electrons and holes re-couple with each other formed of an epitaxial layer of silicon carbide grown from a surface of silicon carbide substrate, wherein the epitaxial layer is formed by first performing hydrogen etching of a surface of silicon carbide substrate and thereafter effecting epitaxial growth of silicon carbide from the etched surface. Further propagation of a basal plane dislocation to the epitaxial layer can be reduced by subjecting the surface of silicon carbide substrate to chemical mechanical polishing prior to the hydrogen etching.

2. 发明公开

EP1895552A4 HIGHLY HEAT-RESISTANT STATIC DEVICE FOR ELECTRIC POWER 审中-公开
标题翻译：高耐热性静电装置用于电力
公开(公告)号：EP1895552A4
公开(公告)日：2011-06-22
申请号：EP06712074
申请日：2006-01-20
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01G4/224 , C08G77/12 , C08G77/20 , C08L83/04 , H01F27/32 , H01F30/00 , H01G2/10 , H01G4/18 , H01G4/20
CPC分类号： H01G2/10 , C08G77/12 , C08G77/20 , C08L83/04 , C08L2205/03 , H01B7/292 , H01F27/327 , Y10T428/31544 , Y10T428/31721 , C08L83/00

3. 发明公开

EP1657748A4 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER CONVERTER USING SUCH SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体元件，其制造方法和功率变频器这样的半导体元件
公开(公告)号：EP1657748A4
公开(公告)日：2009-09-30
申请号：EP04771897
申请日：2004-08-19
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01L23/34 , H01L29/20 , H01L29/24 , H01L29/74 , H01L29/744 , H01L29/861
CPC分类号： H01L29/8613 , H01L23/045 , H01L23/34 , H01L23/345 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/744 , H01L2224/04042 , H01L2224/05556 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/48465 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/73265 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15312 , H01L2924/16152 , H01L2924/181 , H01L2924/19107 , H01L2924/20758 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

4. 发明公开

EP2169722A4 PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE 审中-公开
标题翻译： PN二极管电路，并且转换器装置
公开(公告)号：EP2169722A4
公开(公告)日：2011-06-22
申请号：EP08777273
申请日：2008-06-17
申请人： KANSAI ELECTRIC POWER CO
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA , TANAKA ATSUSHI
IPC分类号： H01L29/861 , H01L21/822 , H01L27/04 , H01L29/32 , H01L29/744 , H02M1/34
CPC分类号： H01L27/0814 , H01L21/8213 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/32 , H01L29/861 , H02M1/34 , H02M7/003 , Y02B70/1483

5. 发明公开

EP1746132A4 SILICON-CONTAINING CURABLE COMPOSITION AND CURED OBJECT OBTAINED BY THERMALLY CURING THE SAME 有权
标题翻译：含硅固化组合物和热硬化通过这种构造GOT固化体
公开(公告)号：EP1746132A4
公开(公告)日：2009-12-16
申请号：EP05739080
申请日：2005-05-10
申请人： ADEKA CORP , KANSAI ELECTRIC POWER CO
发明人： SUEYOSHI TAKASHI , HIWATARI KEN , JANADO TADASHI ASAHI , SHOJI YOSHIKAZU , SUGAWARA YOSHITAKA
IPC分类号： C08L83/07 , C08L83/04 , C08L83/05
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/18 , C08G77/20 , C08G77/70 , C08L83/00

6. 发明公开

EP1653598A4 INVERTER APPARATUS 审中-公开
标题翻译： WECHSELRICHTERVORRICHTUNG
公开(公告)号：EP1653598A4
公开(公告)日：2009-06-03
申请号：EP04748104
申请日：2004-07-23
申请人： KANSAI ELECTRIC POWER CO , NISSIN ELECTRIC CO LTD
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI , MATSUKAWA MITSURU , MINOWA YOSHIFUMI , SHIKATA TOSHIHIKO
IPC分类号： H02M7/521 , H02M7/48
CPC分类号： H02M7/521 , H02M1/32 , H02M1/38 , H02M2001/0012
摘要： Any potential variation is prevented from occurring during a turn-off interval of a GTO element, thereby ensuring the execution of a turn-on of the GTO element so as to stabilize the gate drawn current. In an inverter apparatus (11) having a three-phase inverter (14) in which pairs of GTO elements (UP,UN,VP,VN,WP,WN) are bridge-configured so as to perform an AC conversion of the supply voltage of a DC power supply (13), an inverter control part is provided with such a simultaneous-switching prevention function that if, during a predetermined interval following an off-operation of any one of the GTO elements, for example, a GTO element (UP), there occur on-demand signals of GTO elements (VN,WN) of the other phases that are anti-poles of the GTO element (UP), then the on-operations of the other-phase GTO elements (VN,WN) are delayed by the predetermined interval.
摘要翻译：在GTO元件的关断间隔期间防止发生任何可能的变化，由此确保执行GTO元件的导通以稳定栅极吸取电流。在具有三相逆变器（14）的逆变器装置（11）中，成对的GTO元件（UP，UN，VP，VN，WP，WN）被桥式配置以执行电源电压的AC转换（13）的逆变器控制部分具有这样的同时切换防止功能，即，在任何一个GTO元件的断开操作之后的预定间隔期间，如果GTO元件（ UP）时，发生作为GTO元件（UP）的反极性的其他相的GTO元件（VN，WN）的按需信号，则发生其他相的GTO元件（VN，WN））延迟了预定的时间间隔。

7. 发明公开

EP1653507A4 HIGH-HEAT-RESISTANT SEMICONDUCTOR DEVICE 审中-公开
标题翻译：高耐热性半导体器件
公开(公告)号：EP1653507A4
公开(公告)日：2007-09-12
申请号：EP04770826
申请日：2004-07-20
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01L23/29 , C08G77/44 , C08L83/10 , H01L25/16 , H01L29/24 , H01L29/861 , H01L31/0203 , H01L31/12 , H01L33/44
CPC分类号： C08G77/44 , C08L83/10 , H01L24/45 , H01L25/167 , H01L29/1608 , H01L29/861 , H01L31/0203 , H01L33/44 , H01L2224/45015 , H01L2224/45144 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L2924/12032 , H01L2924/12036 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/20758
摘要： In a wide gap semiconductor device of SiC or the like used at a temperature equal to or higher than 150 degrees centigrade, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high polymer, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional structure by using a covalent bond, which is caused by addition reaction, to couple together organosilicon polymers C prepared by using siloxane bonding to couple one or more types of organosilicon polymers A having a bridged structure using siloxane (Si-O-Si bond) with one or more types of organosilicon polymers B having a linear coupling structure using siloxane.

8. 发明公开

EP1229591A4 SEMICONDUCTOR DEVICE 有权
标题翻译： HALBLEITERANORDNUNG
公开(公告)号：EP1229591A4
公开(公告)日：2007-01-03
申请号：EP00970047
申请日：2000-10-24
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/20 , H01L29/22 , H01L29/24 , H01L29/267 , H01L29/417 , H01L29/423 , H01L29/739 , H01L29/74 , H01L29/744 , H01L29/749
CPC分类号： H01L29/7825 , H01L29/0634 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/22 , H01L29/267 , H01L29/41716 , H01L29/41725 , H01L29/41766 , H01L29/42368 , H01L29/7393 , H01L29/7394 , H01L29/7436 , H01L29/744 , H01L29/749 , H01L29/7809 , H01L29/7816
摘要： A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.
摘要翻译：本发明提供一种半导体装置，其在不降低杂质浓度的情况下缓和漂移部的电场，并且具有高耐压和低导通电阻，其中，当额定电压被施加在形成在主体区域和漏极区域之间时绝缘半导体衬底选择夹在体区和漏区之间的两个p型和n型漂移区的厚度，以便完全消耗漂移区。

9. 发明公开

EP2110857A4 BIPOLAR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING ZENER VOLTAGE 审中-公开
标题翻译：双极半导体元件，方法双极半导体元件的用于控制齐纳电压的生产和方法
公开(公告)号：EP2110857A4
公开(公告)日：2011-06-15
申请号：EP08704291
申请日：2008-01-31
申请人： KANSAI ELECTRIC POWER CO , CENTRAL RES INST ELECT
发明人： ISHII RYOSUKE , NAKAYAMA KOJI , SUGAWARA YOSHITAKA , TSUCHIDA HIDEKAZU
IPC分类号： H01L29/866 , H01L21/329 , H01L29/24 , H01L29/36
CPC分类号： H01L29/866 , H01L29/06 , H01L29/0615 , H01L29/1608 , H01L29/36 , H01L29/66106 , H01L29/8613

10. 发明公开

EP1737042A4 VOLTAGE-CONTROLLED SEMICONDUCTOR DEVICE 审中-公开
标题翻译：压控半导体器件
公开(公告)号：EP1737042A4
公开(公告)日：2010-05-26
申请号：EP05721021
申请日：2005-03-17
申请人： KANSAI ELECTRIC POWER CO
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： H01L29/739 , H01L29/78 , H01L29/10 , H01L29/12 , H01L29/24
CPC分类号： H01L29/1095 , H01L29/0623 , H01L29/7391 , H01L29/7395

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