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1. 发明公开

EP1739726A4 BIPOLAR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：双极半导体元件及其制造方法
公开(公告)号：EP1739726A4
公开(公告)日：2009-08-26
申请号：EP05721512
申请日：2005-03-25
申请人： KANSAI ELECTRIC POWER CO , CENTRAL RES INST ELECT
发明人： NAKAYAMA KOJI , SUGAWARA YOSHITAKA , TSUCHIDA HIDEKAZU , KAMATA ISAHO , MIYANAGI TOSHIYUKI , NAKAMURA TOMONORI
IPC分类号： H01L21/20 , H01L21/04 , H01L21/205 , H01L21/302 , H01L21/331 , H01L21/336 , H01L29/73 , H01L29/737 , H01L29/74 , H01L29/78 , H01L29/861
CPC分类号： H01L29/8613 , H01L21/02019 , H01L21/02024 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Production of a bipolar semiconductor device having at least part of a region wherein at current passage electrons and holes re-couple with each other formed of an epitaxial layer of silicon carbide grown from a surface of silicon carbide substrate, wherein the epitaxial layer is formed by first performing hydrogen etching of a surface of silicon carbide substrate and thereafter effecting epitaxial growth of silicon carbide from the etched surface. Further propagation of a basal plane dislocation to the epitaxial layer can be reduced by subjecting the surface of silicon carbide substrate to chemical mechanical polishing prior to the hydrogen etching.

2. 发明公开

EP1895552A4 HIGHLY HEAT-RESISTANT STATIC DEVICE FOR ELECTRIC POWER 审中-公开
标题翻译：高耐热性静电装置用于电力
公开(公告)号：EP1895552A4
公开(公告)日：2011-06-22
申请号：EP06712074
申请日：2006-01-20
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01G4/224 , C08G77/12 , C08G77/20 , C08L83/04 , H01F27/32 , H01F30/00 , H01G2/10 , H01G4/18 , H01G4/20
CPC分类号： H01G2/10 , C08G77/12 , C08G77/20 , C08L83/04 , C08L2205/03 , H01B7/292 , H01F27/327 , Y10T428/31544 , Y10T428/31721 , C08L83/00

3. 发明公开

EP1657748A4 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER CONVERTER USING SUCH SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体元件，其制造方法和功率变频器这样的半导体元件
公开(公告)号：EP1657748A4
公开(公告)日：2009-09-30
申请号：EP04771897
申请日：2004-08-19
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01L23/34 , H01L29/20 , H01L29/24 , H01L29/74 , H01L29/744 , H01L29/861
CPC分类号： H01L29/8613 , H01L23/045 , H01L23/34 , H01L23/345 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/744 , H01L2224/04042 , H01L2224/05556 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/48465 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/73265 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15312 , H01L2924/16152 , H01L2924/181 , H01L2924/19107 , H01L2924/20758 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

4. 发明公开

EP2110857A4 BIPOLAR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING ZENER VOLTAGE 审中-公开
标题翻译：双极半导体元件，方法双极半导体元件的用于控制齐纳电压的生产和方法
公开(公告)号：EP2110857A4
公开(公告)日：2011-06-15
申请号：EP08704291
申请日：2008-01-31
申请人： KANSAI ELECTRIC POWER CO , CENTRAL RES INST ELECT
发明人： ISHII RYOSUKE , NAKAYAMA KOJI , SUGAWARA YOSHITAKA , TSUCHIDA HIDEKAZU
IPC分类号： H01L29/866 , H01L21/329 , H01L29/24 , H01L29/36
CPC分类号： H01L29/866 , H01L29/06 , H01L29/0615 , H01L29/1608 , H01L29/36 , H01L29/66106 , H01L29/8613

5. 发明公开

EP1737042A4 VOLTAGE-CONTROLLED SEMICONDUCTOR DEVICE 审中-公开
标题翻译：压控半导体器件
公开(公告)号：EP1737042A4
公开(公告)日：2010-05-26
申请号：EP05721021
申请日：2005-03-17
申请人： KANSAI ELECTRIC POWER CO
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： H01L29/739 , H01L29/78 , H01L29/10 , H01L29/12 , H01L29/24
CPC分类号： H01L29/1095 , H01L29/0623 , H01L29/7391 , H01L29/7395

6. 发明公开

EP1973165A4 SILICON CARBIDE BIPOLAR SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SILICIUMCARBID-BIPOLARHALBLEITERBAUELEMENT
公开(公告)号：EP1973165A4
公开(公告)日：2009-09-02
申请号：EP06834573
申请日：2006-12-13
申请人： KANSAI ELECTRIC POWER CO , CENTRAL RES INST ELECT
发明人： ISHII RYOSUKE , NAKAYAMA KOJI , SUGAWARA YOSHITAKA , MIYANAGI TOSHIYUKI , TSUCHIDA HIDEKAZU , KAMATA ISAHO , NAKAMURA TOMONORI
IPC分类号： H01L29/861 , H01L21/04 , H01L29/06 , H01L29/24
CPC分类号： H01L29/1604 , H01L21/0465 , H01L21/047 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： A SiC bipolar semiconductor device having a mesa shape wherein a first conductivity type SiC drift layer and a second conductivity type SiC charge injection layer are epitaxially grown on the surface of a SiC single crystal substrate. In the SiC bipolar semiconductor device, generation and area increase of lamination defects are suppressed, and increase of a forward voltage is suppressed. Furthermore, withstand voltage characteristics are improved in the status where a reverse voltage is applied. On a mesa wall section or on the mesa wall section and a mesa peripheral section, a conduction deterioration preventing layer is formed for spatially separating the surface from a pn junction interface. In one embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide low resistance layer which becomes equipotential when a reverse voltage is applied. In another embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide conductive layer, and a metal film which becomes equipotential when a reverse voltage is applied is formed on the surface of the conduction deterioration preventing layer. Furthermore, in another embodiment, the conduction deterioration preventing layer is composed of a high resistance amorphous layer.
摘要翻译：一种具有台面形状的SiC双极型半导体器件，其中第一导电型SiC漂移层和第二导电型SiC电荷注入层在SiC单晶衬底的表面上外延生长。在SiC双极型半导体器件中，抑制了层叠缺陷的产生和面积增加，并抑制了正向电压的增加。此外，在施加反向电压的状态下耐电压特性得到改善。在台面壁部分上或在台面壁部分和台面周边部分上，形成用于在空间上将表面与pn结界面分离的导电劣化防止层。在一个实施例中，导通恶化防止层由当施加反向电压时变为等电位的第二导电类型碳化硅低电阻层组成。在另一实施例中，导通恶化防止层由第二导电类型的碳化硅导电层构成，并且在导通恶化防止层的表面上形成当施加反向电压时变为等电位的金属膜。此外，在另一个实施例中，导电劣化防止层由高电阻非晶层构成。

7. 发明公开

EP1713130A4 HIGH BREAKDOWN VOLTAGE WIDE GAP SEMICONDUCTOR DEVICE AND POWER DEVICE 审中-公开
标题翻译：半导体部件和性能组件具有高击穿电压和较大的差距
公开(公告)号：EP1713130A4
公开(公告)日：2009-07-29
申请号：EP05709770
申请日：2005-02-04
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA
IPC分类号： H01L29/74 , H01L29/861 , H01L29/06 , H01L29/12 , H01L29/24 , H01L29/40 , H01L29/417 , H01L29/744 , H01L29/78
CPC分类号： H01L29/407 , H01L29/0615 , H01L29/0619 , H01L29/0657 , H01L29/417 , H01L29/41716 , H01L29/41741 , H01L29/744 , H01L29/7811 , H01L29/861 , H01L29/872
摘要： A high breakdown voltage semiconductor device in which the degradation of the forward voltage is lessened, the life is long, and the reliability is high. The junction between the drift layer and the anode layer of a bipolar semiconductor device and a field relaxation layer thereof are so formed that they are spaced from each other. The end of the anode electrode is opposed to the semiconductor region between the junction and the field relaxation layer, with an insulating film interposed therebetween. When a reverse bias is applied, the junction and the field relaxation layer are electrically interconnected by the field effect given by the electrode to the drift layer between the junction and the field relaxation layer through the insulating film. As a result, the field concentration on the end of the junction is relaxed. When a forward bias is applied, the junction is electrically isolated from the field relaxation layer so as to pass the forward current only through the junction.

8. 发明公开

EP1857488A4 HIGHLY HEAT-RESISTANT SYNTHETIC POLYMER COMPOUND AND HIGH WITHSTAND VOLTAGE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在高度耐热性高分子化合物及半导体元件与高压电击
公开(公告)号：EP1857488A4
公开(公告)日：2009-06-03
申请号：EP06712317
申请日：2006-01-25
申请人： KANSAI ELECTRIC POWER CO , ADEKA CORP
发明人： SUGAWARA YOSHITAKA , SHOJI YOSHIKAZU
IPC分类号： C08G77/44 , C08K3/14 , C08K3/22 , C08K3/28 , C08L83/04 , C08L83/10 , H01L23/29 , H01L23/31 , H01L29/744 , H01L29/861 , H01L29/868 , H01L31/12
CPC分类号： H01L23/3135 , C08G77/04 , C08G77/44 , H01L23/04 , H01L23/045 , H01L23/24 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L25/072 , H01L25/074 , H01L25/167 , H01L31/0203 , H01L33/56 , H01L2224/04042 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/16152 , H01L2924/00014 , H01L2924/00 , H01L2924/20758
摘要： The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by liking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si-O-Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having hign heat conductivity are preferably mixed with the synthetic polymer compound.

9. 发明公开

EP1619724A4 GATE TURN-OFF THYRISTOR 审中-公开
标题翻译： GATE-AUSSCHALT晶闸管
公开(公告)号：EP1619724A4
公开(公告)日：2008-11-12
申请号：EP04726292
申请日：2004-04-07
申请人： KANSAI ELECTRIC POWER CO
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： H01L29/74 , H01L29/06 , H01L29/10 , H01L29/744
CPC分类号： H01L29/1016 , H01L29/0615 , H01L29/0834 , H01L29/744
摘要： A mesa-type wide-gap semiconductor gate turn-off thyristor has a low gate withstand voltage and a large leakage current. Since the ionization rate of P-type impurities greatly increases at high temperatures when compared with that at room temperature, the hole implantation amount increases and the minority carrier lifetime becomes longer. Consequently, the maximum controllable current is significantly lowered when compared with that at room temperature. To solve these problems, a p-type base layer is formed on an n-type SiC cathode emitter layer which has a cathode electrode on one surface, and a thin n-type base layer is formed on the p-type base layer. A mesa-shaped p-type anode emitter layer is formed in the central region of the n-type base layer. An n-type gate contact region is formed sufficiently apart from the junction between the p-type anode emitter layer and the n-type base layer, and an n-type low-resistance gate region is so formed in the n-type base layer that it surrounds the anode emitter layer.
摘要翻译：台面型宽间隙半导体栅极关断晶闸管的栅极耐压低，漏电流大。由于与室温相比，P型杂质的离子化率在高温下大幅增加，因此空穴注入量增加，少数载流子寿命变长。因此，与室温下相比，最大可控电流显着降低。为了解决这些问题，在一个面上具有阴极电极的n型SiC阴极发射极层上形成p型基极层，在该p型基极层上形成薄的n型基极层。台面形p型阳极发射极层形成在n型基极层的中心区域中。形成与p型阳极发射极层和n型基极层之间的结足够远的n型栅极接触区，并且在n型基极层中形成n型低电阻栅极区它围绕阳极发射极层。

10. 发明公开

EP1128443A4 FIELD-EFFECT SEMICONDUCTOR DEVICE 有权
标题翻译： FELDELFEKT半导体部件
公开(公告)号：EP1128443A4
公开(公告)日：2007-08-01
申请号：EP99970509
申请日：1999-10-07
申请人： KANSAI ELECTRIC POWER CO
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI
IPC分类号： H01L21/04 , H01L21/329 , H01L21/331 , H01L21/332 , H01L29/10 , H01L29/24 , H01L29/739 , H01L29/744 , H01L29/749 , H01L29/772 , H01L29/78 , H01L29/80 , H01L29/74
CPC分类号： H01L29/7391 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66234 , H01L29/66356 , H01L29/66378 , H01L29/739 , H01L29/7392 , H01L29/744 , H01L29/749 , H01L29/7827 , H01L29/7828 , H01L29/7832
摘要： A buried gate region, a buried gate contact region, and a gate contact region are provided in an SiC substrate. Therefore, a depletion layer extends into a channel region, so that the breakdown strength is strong in a normally-off state. When a voltage lower than the built-in voltage is applied to the gate, the depletion layer is narrowed, and the on-resistance is lowered. When a voltage higher than the built-in voltage is applied to the gate, holes are injected from the gate, and conductivity modulation is caused, thereby lowering the on-resistance.

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