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1. 发明授权

EP1219731B1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF 有权
标题翻译：铁磁P型ZINKOXIDEINKRISTALL及其制造方法
公开(公告)号：EP1219731B1
公开(公告)日：2004-04-28
申请号：EP00942464.9
申请日：2000-07-03
申请人： Japan Science and Technology Agency
发明人： YOSHIDA, Hiroshi , SATO, Kazunori
IPC分类号： C30B29/16 , C30B23/02
CPC分类号： G06N99/002 , B82Y10/00 , C30B23/02 , C30B29/16
摘要： The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, and a p-type dopant. In another aspect of the present invention, the thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, a p-type dopant, and an n-type dopant. The single-crystal zinc oxide material can be applied to quantum computers and high-capacity magnetic-optical recording medium by combining with conventional n-type or p-type transparent electrode ZnO materials or optical fibers, and to powerful information-communication devices or quantum computers as a photoelectric material usable for a wide range from visible light to ultraviolet light.

2. 发明公开

EP1536432A1 FERROMAGNETIC IV GROUP BASED SEMICONDUCTOR, FERROMAGNETIC III-V GROUP BASED COMPOUND SEMICONDUCTOR, OR FERROMAGNETIC II-IV GROUP BASED COMPOUND SEMICONDUCTOR, AND METHOD FOR ADJUSTING THEIR FERROMAGNETIC CHARACTERISTICS 审中-公开
标题翻译：铁磁，ON IV族系半导体，铁磁，AT III-V族类化合物半导体和铁磁，ON THE II-IV族类化合物半导体和方法用于设置FERRO磁特性
公开(公告)号：EP1536432A1
公开(公告)日：2005-06-01
申请号：EP03736048.4
申请日：2003-06-05
申请人： Japan Science and Technology Agency
发明人： YOSHIDA, Hiroshi , ARAKI, Kazuya , SATO, Kazunori
IPC分类号： H01F10/193 , G02F1/09 , G02B27/28
CPC分类号： H01F1/404 , H01F1/0009 , H01F1/402 , H01F1/405 , H01F10/193
摘要： Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The ferromagnetic characteristic of the ferromagnetic semiconductor is controlled by adjusting the concentration of the rare-earth metal element, combining two or more of the rare-earth metal elements or adding a p-type or n-type dopant. The present invention can provide a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor which exhibits light transparency and stable ferromagnetic characteristics.
摘要翻译：公开了一种铁磁组基于IV-半导体或铁磁组基于III-V或II-VI族系化合物半导体，包括基于IV族半导体或一组基于III-V族或基于II-VI族化合物半导体，其含有选自自由Ce，镨，钕，PM，钐，铕，钆，铽，镝，钬，铒，铥，Yb和Lu中选择的至少一种的稀土类金属元素。铁磁半导体的铁磁特性通过调节稀土类金属元素的浓度，组合两个或更多的稀土类金属元素的或添加的p型或n型掺杂剂来控制。本发明可提供一种铁磁性基团基于IV-半导体或铁磁III-V族系或II-VI族化合物半导体型表现出光的透明性和稳定的铁磁特性。

3. 发明公开

EP1634979A1 TRANSPARENT FERROMAGNETIC ALKALI/CHALCOGENIDE COMPOUND COMPRISING SOLID SOLUTION OF TRANSITION METAL OR RARE EARTH METAL AND METHOD OF REGULATING FERROMAGNETISM THEREOF 审中-公开
标题翻译： TRANSPARENT铁磁碱/硫族化合物材料，其包含过渡金属或稀土金属的固溶体，AND METHOD FOR CONTROL OF铁磁THEREOF
公开(公告)号：EP1634979A1
公开(公告)日：2006-03-15
申请号：EP04720196.7
申请日：2004-03-12
申请人： Japan Science and Technology Agency
发明人： YOSHIDA, Hiroshi , SEIKE, Masayoshi , SATO, Kazunori , YANASE, Akira
IPC分类号： C30B29/10 , G02F1/09 , H01F1/00
CPC分类号： G02F1/0036 , H01F1/0009 , H01F1/055 , H01F1/402
摘要： Disclosed is a ferromagnetic alkali chalcogen compound capable of providing a completely-spin-polarized transparent ferromagnetic material using an alkali chalcogen compound having light-transparency, and a method of adjusting ferromagnetic properties thereof. The transparent ferromagnetic alkali chalcogenide comprises an alkali chalcogen compound which has an anti-fluorite structure and contains at least one metal element selected from a 3d transition metal element group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu; a 4d transition metal element group consisting of Zr, Nb, Mo, Tc, Ru and Rh; a 5d transition metal element group consisting of Hf, Ta, W, Os, Re and Ir; and a lanthanum-series rare-earth element group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The selected metal element is incorporated in the alkali chalcogen compound in the form of a solid solution to provide a ferromagnetic characteristic thereto. The ferromagnetic properties are adjusted through control of valence states based, for example, on adjustment of a concentration of each of the metal elements, selection of a combination of two or more of the metal elements, and/or addition of an acceptor and a donor.
摘要翻译：公开的是能够提供使用上具有光透明性碱硫属化合物完全呼叫自旋极化透明铁磁材料，并调整其铁磁特性的方法的一个铁磁碱硫属化合物。透明铁磁碱硫族化物其中有抗萤石结构，并且包含碱的硫属化合物的包括从由钛，钒，铬，锰，铁，钴，镍和铜的3d过渡金属元素组中的至少一种金属元素; 4d过渡金属元素选自由锆，铌，钼，锝，Ru和Rh组成的; 一个5d过渡金属元素选自由铪，钽，钨，锇，铼和铱的; 和自由铈，镨，钕，PM，钐，铕，钆，铽，镝，钬，铒，铥，镱和鲁的镧系稀土元素组。所选择的金属元素在碱硫属化合物中掺入固体溶液的形式，以提供一个铁磁特性于此。铁磁属性通过化合价的控制来调整各州基于，例如，在各金属元素的浓度的调整，两种或更多种金属元素，和/或添加的受体和供体的组合的选择，

4. 发明公开

EP1548832A1 MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE 审中-公开
标题翻译： MAGNETORESISTIVER DIREKTZUGRIFFS-SPEICHERBAUSTEIN
公开(公告)号：EP1548832A1
公开(公告)日：2005-06-29
申请号：EP03733382.0
申请日：2003-06-11
申请人： Japan Science and Technology Agency
发明人： YOSHIDA, Hiroshi , SATO, Kazunori
IPC分类号： H01L27/105 , H01L43/08 , H01L43/12 , G11C11/15
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08 , H01L43/10
摘要： Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.
摘要翻译：公开了一种使用磁性半导体的新型磁阻随机存取存储器（MRAM）器件，其基于从引脚类型导出的整流效应，能够在没有任何MOS晶体管的情况下以简化的结构实现高集成度和节能具有p型半金属铁磁半导体的结构的低电阻隧穿 - 磁阻效应（低电阻TMR）二极管，n型半金属铁磁半导体和至少一个介于其间的非磁性绝缘体的原子层，或由不具有非磁性绝缘体的插入原子层的结构的pn型低电阻隧穿 - 磁阻效应（低电阻TMR）二极管导出的整流效应。

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