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1. 发明公开

EP3343654A1 METHOD FOR FORMING PZT FERROELECTRIC FILM 有权转让
公开(公告)号：EP3343654A1
公开(公告)日：2018-07-04
申请号：EP16841708.7
申请日：2016-08-26
申请人： Japan Advanced Institute of Science and Technology , Mitsubishi Materials Corporation
发明人： TAGASHIRA, Yuki , SHIMURA, Reijiro , TAKAMURA, Yuzuru , LI, Jinwang , SHIMODA, Tatsuya , WATANABE, Toshiaki , SOYAMA, Nobuyuki
IPC分类号： H01L41/43 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/187 , H01L41/318
摘要： The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200°C in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a temperature rising rate of 0.5°C/second or higher in an oxygen-containing atmosphere or by raising a temperature with a temperature rising rate of 0.2°C/second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500°C. An amount of the liquid composition in each application is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during the UV irradiation.

2. 发明授权

EP3343654B1 METHOD FOR FORMING PZT FERROELECTRIC FILM 有权转让
公开(公告)号：EP3343654B1
公开(公告)日：2020-04-15
申请号：EP16841708.7
申请日：2016-08-26
申请人： Japan Advanced Institute of Science and Technology , Mitsubishi Materials Corporation
发明人： TAGASHIRA, Yuki , SHIMURA, Reijiro , TAKAMURA, Yuzuru , LI, Jinwang , SHIMODA, Tatsuya , WATANABE, Toshiaki , SOYAMA, Nobuyuki
IPC分类号： H01L41/318 , H01L21/316 , H01L41/187 , H01L41/43

3. 发明公开

EP3285283A1 ETCHING MASK, ETCHING MASK PRECURSOR, METHOD FOR MANUFACTURING OXIDE LAYER, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR 审中-公开
标题翻译：蚀刻掩模，蚀刻掩模前体，制造氧化物层的方法以及制造薄膜晶体管的方法
公开(公告)号：EP3285283A1
公开(公告)日：2018-02-21
申请号：EP16779856.0
申请日：2016-03-14
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： INOUE, Satoshi , SHIMODA, Tatsuya , FUKADA, Kazuhiro , NISHIOKA, Kiyoshi , FUJIMOTO, Nobutaka , SUZUKI, Masahiro
IPC分类号： H01L21/3065 , H01L21/336 , H01L29/786
CPC分类号： H01L21/3065 , H01L21/3086 , H01L27/1288 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.
摘要翻译：根据本发明的一个实施例的用于丝网印刷的蚀刻掩模80包括脂肪族聚碳酸酯。此外，根据本发明的一个实施例的制造氧化物层（沟道44）的方法包括：形成包括脂族聚碳酸酯的蚀刻掩模80的图案的蚀刻掩模形成步骤; 在蚀刻掩模形成步骤之后，使氧化物层与用于溶解未被蚀刻掩模80保护的氧化物层（通道44）的一部分的溶液接触的接触步骤; 以及在接触步骤之后，将氧化物层（沟道44）和蚀刻掩模80加热到蚀刻掩模80被分解的温度或高于该温度的加热步骤。

4. 发明公开

EP3352202A1 COMPOSITE MEMBER, METHOD FOR PRODUCING COMPOSITE MEMBER, AND LAYER CONTAINING ALIPHATIC POLYCARBONATE 审中-实审
公开(公告)号：EP3352202A1
公开(公告)日：2018-07-25
申请号：EP16846100.2
申请日：2016-07-21
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： INOUE, Satoshi , SHIMODA, Tatsuya , FUKADA, Kazuhiro , NISHIOKA, Kiyoshi , SUZUKI, Masahiro
IPC分类号： H01L21/3205 , G06F3/041 , G06F3/044 , H01L21/28 , H01L21/288 , H01L21/312 , H01L21/768
CPC分类号： G06F3/041 , G06F3/044 , H01L21/28 , H01L21/3205
摘要： [Problem]
Provided is a composite member which can contribute to simple formation and/or increased quality of fine wiring. [Solution] A composite member 100 according to one embodiment of the present invention includes a base material, an aliphatic polycarbonate-containing layer with multiple island-shaped portions arranged on the base material, and a metal ink, wherein at least a surface of the aliphatic polycarbonate-containing layer with multiple island-shaped portions has a contact angle of 50° or more between pure water and the surface when exposed to ultraviolet light including a wavelength of 180 nm or more and 370 nm or less for 15 minutes, and the metal ink is arranged on the base material at at least a portion of a region sandwiched by the precursor layers.

5. 发明公开

EP3173381A1 OXIDE DIELECTRIC AND METHOD FOR MANUFACTURING SAME, AND SOLID STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：氧化物电介质及其制造方法体和电子固态装置和方法及其生产
公开(公告)号：EP3173381A1
公开(公告)日：2017-05-31
申请号：EP15823922.8
申请日：2015-07-10
申请人： Japan Advanced Institute of Science and Technology , Adamant Co., Ltd.
发明人： SHIMODA, Tatsuya , INOUE, Satoshi , ARIGA, Tomoki
IPC分类号： C01G33/00 , C04B35/00 , H01G4/12
CPC分类号： H01G4/1254 , C01G33/00 , C04B35/4521 , C04B35/495 , C04B35/62218 , C04B2235/3251 , C04B2235/3298 , C04B2235/76 , C04B2235/80 , H01G4/12 , H01L21/02175 , H01L21/0226 , H01L29/7869
摘要： There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric.
An oxide layer 30 includes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a β-BiNbO 4 -type crystal structure. The oxide layer 30 has a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layer 30 in a temperature range of 25°C or more and 120°C or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layer 30 in the temperature range.
摘要翻译：本发明提供在具有优异的性能和固态电子装置（E. G.，电容器，半导体装置，或较小的机电系统），其具有检测上氧化物电介质的介电氧化物。氧化物层30包括氧化物介电（可能包括不可避免的杂质）包含铋（Bi）和铌（Nb）和具有烧绿石型晶体结构的第一晶体相和²-宾波4型的第二晶相晶体结构。该氧化物层30具有与第一晶相的控制的内容和第二晶相的控制的内容，其中，所述第一结晶相的介电常数所做降低了与在一个温度范围内的25°增加氧化物层30的温度 ℃或更高和120℃或以下，并且第二晶相的介电常数做了与在所述温度范围增加氧化物层30的温度增加。

6. 发明公开

EP3032576A1 OXIDE SEMICONDUCTOR LAYER AND PRODUCTION METHOD THEREFOR, OXIDE SEMICONDUCTOR PRECURSOR, OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR ELEMENT, AND ELECTRONIC DEVICE 审中-公开
标题翻译：用于制作，OXIDHALBLEITERVORLÄUFER，氧化物半导体层，半导体元件和电子设备氧化物半导体层和过程
公开(公告)号：EP3032576A1
公开(公告)日：2016-06-15
申请号：EP14835273.5
申请日：2014-07-04
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： INOUE, Satoshi , SHIMODA, Tatsuya , KAWAKITA, Tomoki , FUJIMOTO, Nobutaka , NISHIOKA. Kiyoshi
IPC分类号： H01L21/368 , C01G15/00 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66969 , C01G15/00 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02628 , H01L21/02664 , H01L27/1225 , H01L29/22 , H01L29/24 , H01L29/7869
摘要： The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90wt% or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).
摘要翻译：本发明提供了氧化物半导体层上确实具有较少的裂缝且具有优异的电特性和稳定性，以及作为半导体元件，并包括氧化物半导体层中的每个电子设备。本发明提供了示例性方法制造的氧化物半导体层上的，并且该方法包括将前体层形成，上或上方的基板的步骤中，包含金属的化合物的层状氧化物半导体前体以对分散在氧化物半导体被氧化成一个解决方案，包括由脂族聚碳酸酯构成的粘合剂，和在比第二等于或更高的温度在第一温度下加热前体层实现的粘合剂的90重量％以上的分解，然后进行退火将前体层的退火步骤温度（由X表示）做了比所述第一温度高，达到金属和氧之间的键合，并具有在差热分析（DTA）的放热峰值。

7. 发明公开

EP3376572A1 OXIDE ALL-SOLID-STATE BATTERY 有权
公开(公告)号：EP3376572A1
公开(公告)日：2018-09-19
申请号：EP18157917.8
申请日：2018-02-21
申请人： Japan Advanced Institute of Science and Technology , Toyota Jidosha Kabushiki Kaisha
发明人： SHIMODA, Tatsuya , MASUDA, Takashi , SAITO, Toshiya , OHTA, Shingo
IPC分类号： H01M4/38 , H01M10/052 , H01M10/0562 , H01M10/058 , H01M4/04 , H01M4/134 , H01M4/1395
CPC分类号： H01M6/185 , H01M4/0407 , H01M4/0426 , H01M4/0471 , H01M4/0497 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M10/052 , H01M10/0562 , H01M10/058 , H01M2300/0071 , H01M2300/0094
摘要： An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Li x-3y-z , E y , H z )L α M β O γ ; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2θ = 32.3°±0.5°, 37.6°±0.5°, 43.8°±0.5°, and 57.7°±0.5° in a XRD spectrum obtained by XRD measurement using CuKα irradiation.

8. 发明公开

EP3236488A1 OXIDE PRECURSOR, OXIDE LAYER, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, METHOD FOR PRODUCING OXIDE LAYER, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：氧化物前体，氧化物层，半导体元件，电子器件，氧化物层的制造方法以及半导体元件的制造方法
公开(公告)号：EP3236488A1
公开(公告)日：2017-10-25
申请号：EP15869631.0
申请日：2015-10-05
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： SHIMODA, Tatsuya , NISHIOKA, Kiyoshi , FUJIMOTO, Nobutaka , SUZUKI, Masahiro , INOUE, Satoshi , FUKADA, Kazuhiro
IPC分类号： H01L21/368 , C23C18/12 , H01L21/288 , H01L21/316 , H01L21/336 , H01L29/786
CPC分类号： C23C18/1216 , C23C18/12 , C23C18/1279 , H01L21/02244 , H01L21/02255 , H01L21/02565 , H01L21/02628 , H01L21/288 , H01L29/786
摘要： An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.
摘要翻译：当通过印刷方法形成可用于电子器件或半导体元件的薄膜时，提供能够控制拉丝性的脂肪族聚碳酸酯，氧化物前体和氧化物层。在本发明的氧化物前体中，将要氧化成金属氧化物的金属化合物分散在含有由脂肪族聚碳酸酯和分子量为6000的脂肪族聚碳酸酯构成的粘合剂（可能包含不可避免的杂质）的溶液中，全部脂肪族聚碳酸酯为80质量％以上且40万以下。

9. 发明公开

EP3086360A1 SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE 有权
标题翻译： HALBLEITERBAUEMENT，VERFAHREN ZUR HERSTELLUNG DAVON UND ALIPHATISCHES POLYCARBONAT
公开(公告)号：EP3086360A1
公开(公告)日：2016-10-26
申请号：EP14871269.8
申请日：2014-12-16
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： INOUE, Satoshi , SHIMODA, Tatsuya , FUJIMOTO, Nobutaka , NISHIOKA, Kiyoshi , KARASHIMA, Shuichi
IPC分类号： H01L21/336 , C08G64/02 , H01L21/28 , H01L29/786
摘要： It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.
摘要翻译：本发明的目的是提供一种薄膜晶体管及其制造方法，其可以容易地实现源极/漏极区域的自对准形成，而无需通过真空或低压下的工艺或不使用昂贵的设备。根据本发明的制造薄膜晶体管的示例性方法包括：脂肪族聚碳酸酯层形成步骤，形成脂肪族聚碳酸酯层50，其覆盖设置在半导体层20上方的栅电极层40，栅极绝缘体30插入在栅极电极层40和半导体层20，并且还覆盖半导体层20，并且具有使半导体层20成为n型或p型半导体层的掺杂剂，以及在导致引入的温度下加热的加热步骤的掺杂剂进入半导体层20中并分解脂族聚碳酸酯层50。

10. 发明授权

EP3086360B1 METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT USING ALIPHATIC POLYCARBONATE 有权
公开(公告)号：EP3086360B1
公开(公告)日：2020-06-24
申请号：EP14871269.8
申请日：2014-12-16
申请人： Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
发明人： INOUE, Satoshi , SHIMODA, Tatsuya , FUJIMOTO, Nobutaka , NISHIOKA, Kiyoshi , KARASHIMA, Shuichi
IPC分类号： H01L29/786 , H01L29/66 , H01L21/385 , H01L21/477 , C09D7/61

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