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    • 7. 发明公开
    • Mask and apparatus using it to prepare sample by ion milling
    • Maske und diese verwendende Vorrichtung zur Vorbereitung von Proben durch Ionenbeschuss
    • EP1512957A2
    • 2005-03-09
    • EP04255023.6
    • 2004-08-20
    • Jeol Ltd.Jeol Engineering Co., Ltd.
    • Yoshioka, TadanoriWatanabe, Eiichi
    • G01N1/32
    • G01N1/32
    • A mask (8) for use with a sample preparation apparatus that prepares an ion-milled sample (6) adapted to be observed by an electron microscope is offered. It is possible to prepare the sample (6) having a desired cross section by the use of the mask (8). The mask (8), which defines the boundary between irradiated and unirradiated regions on the sample surface, has an edge portion (8b) having an increased thickness compared with the other portions.
      When the edge portion (8b) of the mask (8) is etched, the original shape is almost maintained. Thus, the side surface (8c) of the mask (8) is kept on the center axis (O) of the ion beam (I B ).
      A sample preparation apparatus and a method of preparing a sample (6) are also disclosed.
    • 提供了一种用于制备适于通过电子显微镜观察的离子研磨样品(6)的样品制备装置的面罩(8)。 可以通过使用掩模(8)来制备具有所需横截面的样品(6)。 限定样品表面上的照射区域和未照射区域之间的边界的掩模(8)具有与其它部分相比具有增加的厚度的边缘部分(8b)。 当掩模(8)的边缘部分(8b)被蚀刻时,几乎保持原始形状。 因此,掩模(8)的侧表面(8c)保持在离子束(IB)的中心轴线(O)上。 还公开了样品制备装置和制备样品(6)的方法。
    • 8. 发明公开
    • Method and equipment for specimen preparation
    • Verfahren zur Probenherstellung
    • EP1804273A1
    • 2007-07-04
    • EP07006837.4
    • 2005-09-28
    • JEOL Ltd.
    • Yoshioka, Tadanori
    • H01J37/305
    • H01J37/3056G01N1/32H01J2237/31745
    • Method and equipment permitting one to easily prepare a good thin-film specimen adapted for observation are offered. The equipment has an ion gun (12) tilted left and right repeatedly to etch a specimen material (11) by an electron beam (I B ) tilted left and right by 1.5° about the z-axis. Then, the ion gun is tilted left and right plural times to ion etch the specimen material. Since a portion (11c, 11d) of the specimen material is especially heavily etched, a through-hole (H) is formed in the specimen material. A thin film having a thickness of about 100 Å is formed around the through-hole. This thickness is adapted for TEM (transmission electron microscope) observation.
    • 提供了一种容易制备适合观察的良好薄膜试样的方法和设备。 该设备具有反复向左和向右倾斜的离子枪(12),以通过围绕z轴向左和向右倾斜1.5°的电子束(I B)蚀刻样品材料(11)。 然后,离子枪左右倾斜多次以离子蚀刻样品材料。 由于样品材料的部分(11c,11d)被特别蚀刻,因此在样品材料中形成通孔(H)。 在通孔周围形成厚度约为100埃的薄膜。 该厚度适用于TEM(透射电子显微镜)观察。
    • 9. 发明公开
    • Apparatus and method for preparing samples
    • Vorrichtung und Verfahren zur Aufbereitung von Proben
    • EP1517355A2
    • 2005-03-23
    • EP04255591.2
    • 2004-09-15
    • Jeol Ltd.Jeol Engineering Co., Ltd.
    • Hasegawa, FuminoriYoshioka, Tadanori
    • H01J37/305H01J37/28G01N1/28
    • H01J37/305G01N1/32H01J37/28H01J2237/0245H01J2237/31745
    • Apparatus and method capable of preparing good samples (6) adapted for observations by electron microscopy are offered. Each sample (6) is ion-etched. During this process, the sample stage (4) is tilted reciprocably left and right about a tilting axis (k). The sample (6) is ion-etched together with a shielding material (12). The sample (6) may contain a substance (M) that is not easily etched by the ion beam (I B ). In the past, unetched portions have been produced due to such a substance (M) that blocks the ion beam (I B ). In the present invention, such unetched portions are not produced in spite of the presence of the substance (M). The substance (M) can be separated from the sample (6). The ion beam (I B ) is directed at the sample (6) with the boundary defined by an end surface (12a) of the shielding material (12). Portions of the sample (6) at a processing position and its vicinities are etched by the beam. A desired cross section (S) of the sample (6) is obtained and will be observed by the operator with a scanning electron microscope or other instrument.
    • 提供了能够通过电子显微镜观察的能够制备好样品(6)的装置和方法。 每个样品(6)被离子蚀刻。 在该过程中,样品台(4)绕倾斜轴线(k)向左和向右可往复地倾斜。 样品(6)与屏蔽材料(12)一起被离子蚀刻。 样品(6)可以含有不容易被离子束(I B)蚀刻的物质(M)。 在过去,由于阻止离子束(I B)的这种物质(M),已经产生未蚀刻部分。 在本发明中,尽管存在物质(M),但是这些未蚀刻部分也不会产生。 物质(M)可以与样品(6)分离。 离子束(I B)指向样品(6),边界由屏蔽材料(12)的端面限定。 在处理位置处的样品(6)的部分及其附近被光束蚀刻。 获得样品(6)的期望横截面(S),并由扫描电子显微镜或其他仪器由操作者观察。