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1. 发明公开

EP1698878A1 Electrode configuration and pressure measuring apparatus 审中-公开
标题翻译： Elektrodenanordnung und Druckmessvorrichtung
公开(公告)号：EP1698878A1
公开(公告)日：2006-09-06
申请号：EP05004855.2
申请日：2005-03-04
申请人： Inficon GmbH
发明人： Knapp, Wolfram , Wüest, Martin
IPC分类号： G01L21/30 , G01L21/32 , G01L21/34 , H01J1/30 , H01J1/304 , H01J41/00 , H01J41/02 , H01J41/04 , H01J41/06 , H01J41/08 , H01J41/10 , H01J19/00 , H01J19/02 , H01J19/04 , H01J19/10 , H01J19/24 , H01J19/14 , H01J19/68 , H01J41/14 , H01J41/16
CPC分类号： G01L21/32 , G01L21/12 , H01J1/3042 , H01J41/04
摘要： An electron-emitting cathode (6) consists of an electricaly conducting emitter layer (7) attached to a side wall (2) and a gate (9) which is fixed at a mall distance inside a concave emitter surface of the emitter layer (7). The cathode (6) surrounds a reaction area (3) containing a cylindrical grid-like anode (5) and a central ion collector (4) which consists of a straight axial filament. An ion collector current (I IC ) reflecting the densitiy of the gas in the reaction region (3) is measured by a current meter (11) while a gate voltage (Vc) is kept between the ground voltage of the emitter layer (7) and a higher anode voltage (V A ) and is regulated in such a way that an anode current (T A ) is kept constant. The emitter layer (7) may comprise an array of metal, e.g., nickel or molybdenum tips or consist essentially of a semiconductor material like silicon, preferably coated by, e.g., carbide, diamond-like carbon or molybdenum, or of carbon nanotubes or it may be a roughened surface portion of the side wall surface. The gate (9) may be a grid or it may be made up of patches of metal film covering spacers distributed over the emitter area or a metal film covering an electron permeable layer placed on the emitter surface.
摘要翻译：电子发射阴极（6）由连接到侧壁（2）的电气传导发射极层（7）和在发射极层（7）的凹面发射器表面内的商场距离处固定的栅极（9）组成）。阴极（6）围绕包含圆柱形栅状阳极（5）的反应区域（3）和由直轴向丝线组成的中心离子收集器（4）。通过电流计（11）测量反映反应区域（3）中气体密度的离子集电极电流（I IC），同时在栅极电压（Vc）保持在发射极层（7）的接地电压之间，和较高的阳极电压（VA），并且以使得阳极电流（TA）保持恒定的方式被调节。发射极层（7）可以包括金属阵列，例如镍或钼尖端，或者基本上由诸如硅的半导体材料组成，优选地由碳化物，类金刚石碳或钼或碳纳米管或碳纳米管涂覆可以是侧壁表面的粗糙表面部分。栅极（9）可以是栅格，或者它可以由分布在发射区上的金属膜覆盖隔离物的贴片或覆盖放置在发射器表面上的电子渗透层的金属膜构成。

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