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1. 发明公开

EP0609635A1 Tungsten liner process for simultaneous formation of integral contact studs and interconnect lines 失效
标题翻译： Wolframumhüllungsverfahrenzur gleichzeitigen Herstellung von Verdrahtungsleitungen mit integrierten Kontaktstummeln。
公开(公告)号：EP0609635A1
公开(公告)日：1994-08-10
申请号：EP93480233.1
申请日：1993-12-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Dalal, Hormzadyer Minocher , Hutchings, Kevin Jack , Rathore, Hazara Singh
IPC分类号： H01L21/90 , H01L23/485
CPC分类号： H01L21/76876 , H01L21/76843 , H01L21/76846 , H01L21/7688 , H01L21/76885 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： Tungsten studs and tungsten lined studs that make low resistance thermally stable ohmic or Schottky contacts to active devices on a semiconductor substrate are made by first defining a triplex metallurgical structure. The triplex metallurgical structure of the present invention includes an ohmic layer (6) of titanium, a barrier layer (7) e.g. Cr-CrO x and a sacrificial layer (8), e.g. Al-Cu. Then, a blanket layer of insulator (9) is deposited and polished, for planarization, until the stud metallurgy is exposed. The sacrificial layer is then etched out, leaving holes self-aligned to the contacts and to the ohmic and the barrier layers. A thin layer of titanium (10) is deposited and appropriately etched out, to leave metal only at the strid location. Finally, a blanket layer of CVD tungsten (12) is then deposited and the substrate is polished for planarization. The metal contact studs can be simultaneously formed with patterned interconnection lines which are self-aligned to each other and also to the contact studs.
摘要翻译：通过首先确定三重金属结构来制造对半导体衬底上的有源器件进行低电阻热稳定欧姆或肖特基接触的钨柱和钨衬里螺柱。本发明的三重冶金结构包括钛的欧姆层（6），阻挡层（7） Cr-CrO x和牺牲层（8），例如。 Al-Cu系。然后，沉积和抛光绝缘体（9）的覆盖层，以进行平面化，直到螺柱冶金暴露。然后蚀刻掉牺牲层，留下孔与触点和欧姆层和阻挡层自对准。沉积薄层的钛（10），并适当地蚀刻出来，仅在大跨度位置留下金属。最后，沉积一层CVD钨（12），并抛光衬底进行平面化。金属接触柱可以同时形成图案化的互连线，它们彼此自对准，也可以与接触螺柱成对。

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