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1. 发明公开

EP3258479A1 METHOD FOR COMPENSATING PATTERN PLACEMENT ERRORS CAUSED BY VARIATION OF PATTERN EXPOSURE DENSITY IN A MULTI-BEAM WRITER 有权转让
标题翻译：用于补偿由多光束写入器中的图案曝光密度的变化引起的图案放置错误的方法
公开(公告)号：EP3258479A1
公开(公告)日：2017-12-20
申请号：EP17175033.4
申请日：2017-06-08
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/3177 , H01J2237/304 , H01J2237/30433 , H01J2237/30461
摘要： A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus is presented. A layout is generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the actual positions thereof deviate from their respective nominal positions by a placement error as a result of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate this displacement, a displacement behavior model established beforehand is employed to predict the displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.
摘要翻译：提出了一种用于补偿在带电粒子多束曝光设备中的目标上写入图案期间的图案布置误差的方法。通过使用带电粒子束暴露多个射束场帧来产生布局，其中每个射束场帧具有各自的局部图案密度，对应于当暴露各个射束场帧时赋予目标的曝光剂量。在写入光束场帧期间，根据在写入光束场帧期间的局部图案密度演变，由于所述曝光设备内的积聚效应，其实际位置偏离其各自的标称位置一个放置误差。为了补偿这种位移，采用预先建立的位移行为模型来预测位移; 确定局部图案密度演变，基于局部图案密度演变和位移特性模型预测射束场的位移，并且基于预测值相应地重新定位射束场帧。

2. 发明授权

EP3070528B1 MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION 有权转让
标题翻译：放松临界尺寸图案区域的多束写作
公开(公告)号：EP3070528B1
公开(公告)日：2017-11-01
申请号：EP16160622.3
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Schiessl, Klaus
IPC分类号： G03F7/20 , H01J37/04 , H01J37/28 , H01J37/317 , H01J37/302
CPC分类号： G03F7/70466 , H01J37/3026 , H01J37/3177 , H01J2237/0435 , H01J2237/31764 , H01J2237/31769

3. 发明公开

EP3093869A1 MULTI-BEAM WRITING USING INCLINED EXPOSURE STRIPES 有权转让
标题翻译： MEHRSTRAHLIGES SCHREIBEN MIT GENEIGTEN BELICHTUNGSSTREIFEN
公开(公告)号：EP3093869A1
公开(公告)日：2016-11-16
申请号：EP16169216.5
申请日：2016-05-11
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , H01J2237/3175 , H01J2237/31766
摘要： To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region (R2) of exposure, and this movement defines a number of stripes (s21-s2n) covering said region (R2) in sequential exposures and having respective widths (y0). The number of stripes are written parallel to each other along a general direction (d2), which is at a small angle (ε) to a principal pattern direction (dh) of structures (80) to be written within the region of exposure (R2).
摘要翻译：为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素构成的图案图像。图案图像沿着曝光区域（R2）上的目标路径移动，并且该移动在连续曝光中定义覆盖所述区域（R2）的数量条纹（s21-s2n）并且具有相应的宽度（y0）。沿着与要被写入曝光区域（R2）内的结构（80）的主图案方向（dh）成小角度（μ）的大致方向（d2）将条纹数彼此平行地写入，）。

4. 发明公开

EP2827358A1 Pattern definition device having multiple blanking arrays 有权转让
标题翻译： Musterdefinitionsvorrichtung mit mehreren Austastungs-Arrays
公开(公告)号：EP2827358A1
公开(公告)日：2015-01-21
申请号：EP14176645.1
申请日：2014-07-11
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： H01J37/045 , H01J37/147 , H01J37/3177 , H01J2237/0435 , H01J2237/0437
摘要： A pattern definition (PD) device (500) for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices (512, 522) positioned in a stacked arrangement. A particle beam (lb) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by means of the two deflection array devices. Each deflection array device (512, 522) comprises a plurality of blanking openings (513, 523) allowing passage of beamlets, and a plurality of deflecting devices, each of said deflecting devices being associated with a respective blanking opening (513, 523) and comprising at least one electrostatic electrode (510, 511, 520, 521). The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. For each deflection array device (512, 522) the deflecting devices correspond to respective subsets (A, B) of the beamlets, such that each deflection array device is configured to act on only the beamlets belonging to the respective subset (A, B) by selectively deflecting them, while allowing the other beamlets (B, A) to traverse the respective deflection array device without deflection.
摘要翻译：用于带电粒子多光束处理或检查装置的图案定义（PD）装置（500）包括以堆叠布置定位的至少两个偏转阵列装置（512,522）。穿过PD器件的粒子束（1b）形成为可以通过两个偏转阵列器件偏转或消隐的多个子束。每个偏转阵列装置（512,522）包括允许子束通过的多个消隐开口（513,523）和多个偏转装置，每个所述偏转装置与相应的消隐开口（513,523）和包括至少一个静电电极（510,511,520,521）。偏转装置可选择性地激活并且构造成在被激活时影响横梁穿过所述各个消隐开口的子束，以便使所述子束偏离其标称路径。对于每个偏转阵列装置（512,522），偏转装置对应于子束的相应子集（A，B），使得每个偏转阵列装置被配置为仅对属于相应子集（A，B）的子束起作用，通过选择性地偏转它们，同时允许其他子束（B，A）无偏转地穿过相应的偏转阵列器件。

5. 发明公开

EP2317535A3 Pattern definition device with multiple multibeam array 有权转让
标题翻译：具有多个多波束阵列的结构，其限定装置
公开(公告)号：EP2317535A3
公开(公告)日：2014-07-16
申请号：EP10015402.0
申请日：2010-12-07
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Löschner, Hans
IPC分类号： H01J37/04 , H01J37/28 , H01J37/317
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/28 , H01J37/3174 , H01J2237/0437 , H01J2237/0458 , H01J2237/1501 , H01J2237/1502
摘要： A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.

6. 发明公开

EP2363875A1 Method for multi-beam exposure on a target 有权转让
标题翻译：在一个目标的多光束曝光的方法
公开(公告)号：EP2363875A1
公开(公告)日：2011-09-07
申请号：EP11450032.5
申请日：2011-03-09
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： B82Y40/00 , B82Y10/00 , H01J37/3177
摘要： For irradiating a target (14) with a beam (pb) of energetic electrically charged particles comprising a plurality of beamlets, the target is exposed in a sequence of exposure stripes composed image pixels. These stripes (s1,s2) are, at their boundaries to adjacent stripes, provided with overlap margins (m12,m21) which are mutually overlapped, so nominal positions of image pixels in the overlap margin (m21) overlap, or substantially coincide, with image pixels in the corresponding overlap margin (m12). During the exposure of an overlap margin (m21), a first subset (n 1 ) of image pixels in said overlap margin are exposed while those of a second subset (n 2 ), possibly a complementary subset with respect to a desired pattern, are not exposed; contrariwise, during the exposure of the corresponding overlap margin (m12), image pixels corresponding to image pixels in the first subset are not exposed, but those corresponding to image pixels in the second subset are.

7. 发明授权

EP2757571B1 High-voltage insulation device for charged-particle optical apparatus 有权转让
标题翻译：用于带电粒子光学设备的高压绝缘装置
公开(公告)号：EP2757571B1
公开(公告)日：2017-09-20
申请号：EP14150119.7
申请日：2014-01-03
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Chylik, Andreas , Kratzert, Gerald , Oberleitner, Roman
IPC分类号： H01J37/02 , H01J37/04 , H01J37/15 , H01J37/317 , H01J37/147
CPC分类号： H01B17/14 , B82Y10/00 , B82Y40/00 , H01J37/023 , H01J37/04 , H01J37/147 , H01J37/15 , H01J37/3177 , H01J2237/036 , H01J2237/038 , H01J2237/1502

8. 发明授权

EP2993684B1 CORRECTION OF SHORT-RANGE DISLOCATIONS IN A MULTI-BEAM WRITER 有权转让
标题翻译： KORREKTUR VON VERWERFUNGEN MIT KURZER REICHWEITE IN EINEM MEHRSTRAHLSCHREIBER
公开(公告)号：EP2993684B1
公开(公告)日：2017-03-08
申请号：EP15181376.3
申请日：2015-08-18
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Spengler, Christoph , Wagner, Markus , Kvasnica, Samuel
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , H01J2237/31764 , H01J2237/31793

9. 发明授权

EP2827358B1 Pattern definition device having multiple blanking arrays 有权转让
标题翻译：图案定义是指具有多个消隐阵列的
公开(公告)号：EP2827358B1
公开(公告)日：2016-05-18
申请号：EP14176645.1
申请日：2014-07-11
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： H01J37/045 , H01J37/147 , H01J37/3177 , H01J2237/0435 , H01J2237/0437

10. 发明公开

EP2993684A1 CORRECTION OF SHORT-RANGE DISLOCATIONS IN A MULTI-BEAM WRITER 有权转让
标题翻译：弯曲矫正短程在多SCHREIBER
公开(公告)号：EP2993684A1
公开(公告)日：2016-03-09
申请号：EP15181376.3
申请日：2015-08-18
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Spengler, Christoph , Wagner, Markus , Kvasnica, Samuel
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , H01J2237/31764 , H01J2237/31793
摘要： Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target,
said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam, wherein the method comprises:
(i) subdividing the exposure area into a plurality of non-overlapping sub-regions,
(ii) determining, for each of said subregions, a subregion dislocation, said subregion dislocation comprising a set of parameters describing the distortion of the target at the location of the respective subregion,
(iii) providing the desired pattern as a graphical representation on the exposure area on the target, said graphical representation being composed of a plurality of graphical elements, each graphical element located at a respective position in the exposure area,
(iv) modifying the graphical representation in accordance with the plurality of subregion dislocations, by dislocating each graphical element according to a subregion dislocation of the subregion which includes the respective position of the graphical element, obtaining a plurality of graphical elements thus dislocated, which compose a corrected graphical representation,
(v) calculating, from the corrected graphical representation, an exposure pattern defined on the multitude of pixels, said exposure pattern being suitable to create a nominal dose distribution on the target realizing contour lines representing the desired pattern.

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