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1. 发明公开

EP2190003A2 Constant current multi-beam patterning 有权转让
标题翻译： Strahlen und konstantem Strom，Strukturierung mit mehreren
公开(公告)号：EP2190003A2
公开(公告)日：2010-05-26
申请号：EP09450212.7
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multibeam exposure apparatus during the exposure of the pattern.
摘要翻译：本发明涉及一种通过多个曝光步骤中带电粒子的光束（1b）在靶（13）的衬底表面上形成图案的方法，其中光束被分成图案化光束（pb ），并且在衬底（13）和图案定义装置（3）之间存在相对运动。这导致图案化粒子束在衬底表面上的有效整体运动，并且在每个曝光步骤中在衬底表面上曝光图像元素，其中靶上的图像元素暴露于子束，在数字期间被多次曝光的曝光步骤。根据从一个曝光步骤到随后的曝光步骤的特定规则，图像元素的曝光步骤的顺序以非线性方式布置，以便减少多光束曝光设备（1）的光学柱中的电流变化，在图案的曝光期间。

2. 发明授权

EP2190003B1 Constant current multi-beam patterning 有权转让
标题翻译：多波束和恒定电流构图
公开(公告)号：EP2190003B1
公开(公告)日：2014-10-01
申请号：EP09450212.7
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143

3. 发明公开

EP2187427A2 Method for maskless particle-beam exposure 有权转让
标题翻译：无掩模粒子束曝光的方法
公开(公告)号：EP2187427A2
公开(公告)日：2010-05-19
申请号：EP09450211.9
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Nowak, Robert , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
摘要翻译：在无掩模粒子多光束处理装置中，通过图案定义系统投影粒子束，该图案定义系统根据期望的图案产生规则的子束阵列，该子束被投影到沿着扫描方向相对于图案以连续速度移动的目标上定义系统。在一系列均匀定时的曝光步骤期间，光束图像沿着扫描方向与目标一起移动，并且在曝光步骤之间，光束图像的位置相对于目标改变。在每个曝光步骤期间，目标覆盖的距离大于目标上相邻图像元素的相互距离。连续曝光步骤中的光束图像的位置对应于一系列交织放置网格，并且在每个曝光步骤之后，光束图像被移位到与不同放置网格相关联的位置，其中位置的改变通常包括穿过扫描方向，从而循环通过该组放置网格。

4. 发明授权

EP2187427B1 Method for maskless particle-beam exposure 有权转让
标题翻译：一种用于无掩模Teilchenstrahlbelichtung方法
公开(公告)号：EP2187427B1
公开(公告)日：2011-10-05
申请号：EP09450211.9
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Nowak, Robert , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143

5. 发明公开

EP2190003A3 Constant current multi-beam patterning 有权转让
标题翻译：构建以恒定电流和多个波束
公开(公告)号：EP2190003A3
公开(公告)日：2010-10-27
申请号：EP09450212.7
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： The invention relates to a method for forming a pattern on a substrate surface of a target (13) by means of a beam (1b) of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam (pb) and there is a relative motion between the substrate (13) and the pattern definition means (3). This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multibeam exposure apparatus (1) during the exposure of the pattern.

6. 发明公开

EP2187427A3 Method for maskless particle-beam exposure 有权转让
标题翻译：一种用于无掩模Teilchenstrahlbelichtung方法
公开(公告)号：EP2187427A3
公开(公告)日：2010-10-13
申请号：EP09450211.9
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Nowak, Robert , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.

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