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1. 发明公开

EP2402082A3 Method for forming a catalyst suitable for growth of carbon nanotubes 审中-公开
标题翻译： Verfahren zum Formen eines Katalysatorsfürdas Wachstum vonKohlennanoröhrchen
公开(公告)号：EP2402082A3
公开(公告)日：2017-01-25
申请号：EP11164022.3
申请日：2011-04-28
申请人： IMEC , Katholieke Universiteit Leuven K.U. Leuven R&D
发明人： Pathangi Sriraman, Hari , Witvrouw, Ann , Vereecken, Philippe M.
IPC分类号： B01J23/74 , B01J35/00 , H01L21/70 , C01B31/02
CPC分类号： B01J23/74 , B01J23/755 , B01J35/0013 , B01J37/347 , B01J37/348 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01L29/0673
摘要： The present invention is related to a method for forming a catalyst nanoparticle on a metal surface, said nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of :
• providing a substrate, having a metal layer on at least a portion of the substrate surface,
• depositing a sacrificial layer at least on said metal layer,
• producing a small hole in said sacrificial layer, thereby exposing the metal layer,
• providing a single catalyst nanoparticle into said hole,
• removing the sacrificial layer.

The invention is further related to growing a carbon nanotube from said catalyst nanoparticle.
摘要翻译：本发明涉及一种用于在金属表面上形成催化剂纳米颗粒的方法，所述纳米颗粒适于生长单一纳米结构，特别是碳纳米管，所述方法至少包括以下步骤：提供基材，其具有在衬底表面的至少一部分上的金属层，至少在所述金属层上沉积牺牲层，在所述牺牲层中产生小孔，由此暴露金属层，提供单个催化剂纳米颗粒进入所述孔，去除牺牲层。本发明进一步涉及从所述催化剂纳米颗粒生长碳纳米管。

2. 发明公开

EP2402082A2 Method for forming a catalyst suitable for growth of carbon nanotubes 审中-公开
标题翻译：碳纳米管的生长形成催化剂的方法
公开(公告)号：EP2402082A2
公开(公告)日：2012-01-04
申请号：EP11164022.3
申请日：2011-04-28
申请人： IMEC , Katholieke Universiteit Leuven K.U. Leuven R&D
发明人： Pathangi Sriraman, Hari , Witvrouw, Ann , Vereecken, Philippe M.
IPC分类号： B01J23/74 , B01J35/00 , H01L21/70 , C01B31/02
CPC分类号： B01J23/74 , B01J23/755 , B01J35/0013 , B01J37/347 , B01J37/348 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01L29/0673
摘要： The present invention is related to a method for forming a catalyst nanoparticle on a metal surface, said nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of :
• providing a substrate, having a metal layer on at least a portion of the substrate surface,
• depositing a sacrificial layer at least on said metal layer,
• producing a small hole in said sacrificial layer, thereby exposing the metal layer,
• providing a single catalyst nanoparticle into said hole,
• removing the sacrificial layer.

The invention is further related to growing a carbon nanotube from said catalyst nanoparticle.

3. 发明授权

EP3162764B1 METHODS FOR FORMING LITHIUM MANGANESE OXIDE LAYERS 有权
标题翻译：形成氧化锰层的方法
公开(公告)号：EP3162764B1
公开(公告)日：2018-04-04
申请号：EP15192543.5
申请日：2015-11-02
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Labyedh, Nouha , Timmermans, Marina Yurievna , Vereecken, Philippe M.
IPC分类号： H01M4/04 , H01M4/131 , H01M4/1391 , H01M4/505 , H01M4/66 , H01M10/0525 , H01M10/0585
CPC分类号： H01M4/045 , C25D9/04 , C25D17/10 , H01M4/0452 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/505 , H01M4/661 , H01M4/664 , H01M10/0525 , H01M10/0585 , H01M2004/021 , H01M2220/30
摘要： A method is provided for forming a porous, electrochemically active lithium manganese oxide layer on a substrate, the method comprising: depositing a porous manganese oxide layer on the substrate; providing a Li containing layer on the porous manganese oxide layer; and afterwards performing an annealing step at a temperature in the range between 200°C and 400°C, thereby inducing a solid-state reaction between the porous manganese oxide layer and the Li containing layer. The method may further comprise, before depositing the porous manganese oxide layer: depositing a seed layer on the substrate. A method of the present disclosure may be used for forming electrode layers of lithium-ion batteries.

4. 发明公开

EP2011572A2 Method for forming catalyst nanoparticles for growing elongated nanostructures 有权
标题翻译： Verfahren zur Bildung von Katalysatornanopartikeln zurZüchtunglänglicherNanostrukturen
公开(公告)号：EP2011572A2
公开(公告)日：2009-01-07
申请号：EP07075889.1
申请日：2007-10-16
申请人： Interuniversitair Microelektronica Centrum (IMEC)
发明人： Radisic, Aleksander , Vereecken, Philippe M.
IPC分类号： B01J35/00 , C01B31/02 , H01L21/768 , H01L51/00
CPC分类号： B01J35/0013 , B01J23/75 , B01J37/06 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , H01L21/76876 , H01L21/76879 , H01L51/0002 , H01L51/0048 , H01L2221/1094
摘要： The present invention provides a method for forming at least one catalyst nanoparticle (8) on at least one sidewall (10) of a three-dimensional structure on a main surface of a substrate (1a, 1 b), the main surface lying in a plane and the sidewall (10) of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate (1a, 1b). The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles (7) embedded in a non-catalytic matrix (5) and selectively removing at least part of the non-catalytic matrix (5) at the sidewalls (10) of the three-dimensional structure to thereby expose at least one catalyst nanoparticle (8). The present invention also provides a method for forming at least one elongated nanostructure (9), such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles (8) formed by the method according to embodiments of the invention as a catalyst. The methods according to embodiments of the invention may be used in, for example, semiconductor processing. The methods according to embodiments of the present invention are scalable and fully compatible with existing semiconductor processing technology.
摘要翻译：本发明提供了一种在基板（1a，1b）的主表面上的三维结构的至少一个侧壁（10）上形成至少一个催化剂纳米颗粒（8）的方法，该主表面位于平面和位于基本上垂直于基板（1a，1b）的主表面的平面的平面中的三维结构的侧壁（10）。该方法包括在主表面上获得三维结构，所述三维结构包括嵌入非催化基质（5）中的催化剂纳米颗粒（7）并选择性地除去至少部分非催化基质（5）在三维结构的侧壁（10）处，从而暴露至少一种催化剂纳米颗粒（8）。本发明还提供了形成至少一个细长纳米结构（9）的方法，例如，使用通过根据本发明的实施方案的方法形成的催化剂纳米颗粒（8）作为催化剂的纳米线或碳纳米管。根据本发明的实施例的方法可以用于例如半导体处理。根据本发明的实施例的方法是可扩展的并且与现有的半导体处理技术完全兼容。

5. 发明授权

EP2138609B1 Method for growing mono-crystalline nanostructures and use thereof in semiconductor device fabrication 有权
标题翻译：一种用于制备单晶的纳米结构和它们的使用对半导体器件的制造过程
公开(公告)号：EP2138609B1
公开(公告)日：2012-08-01
申请号：EP09075275.9
申请日：2009-06-24
申请人： IMEC vzw
发明人： Vereecken, Philippe M.
IPC分类号： H01L29/06 , B82Y30/00 , B82Y10/00
CPC分类号： C30B29/60 , B82Y10/00 , B82Y30/00 , C30B1/023 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/813

6. 发明公开

EP3267513A1 ION INSERTION BATTERY ELECTRODE AND METHOD OF FABRICATION 审中-公开
标题翻译：离子插入电池电极及其制造方法
公开(公告)号：EP3267513A1
公开(公告)日：2018-01-10
申请号：EP16177826.1
申请日：2016-07-04
申请人： IMEC VZW , Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO , Katholieke Universiteit Leuven
发明人： Moitzheim, Sebastien , Vereecken, Philippe M. , Balder, Ellis , Poodt, Paul
IPC分类号： H01M4/04 , H01M4/1315 , H01M4/13915 , H01M4/485 , H01M10/0525 , H01M10/0562 , C01G23/07 , H01M6/40
CPC分类号： H01M4/1315 , H01M4/0407 , H01M4/0428 , H01M4/13915 , H01M4/485 , H01M6/40 , H01M10/0525 , H01M10/0562 , H01M2004/021
摘要： The present disclosure relates to electrode layers of ion insertion type batteries and to electrode layer materials wherein the electrode layer materials have a good electronic conductivity and a good ion conductivity, and wherein the electrode layers offer a good rate performance and a high storage capacity. The disclosure further relates to ion insertion type battery cells and batteries comprising such electrode layers, e.g. as an anode. The disclosure further relates to methods for forming such electrode layers and to methods for fabricating ion insertion type battery cells and batteries. Electrode layers according to the present disclosure comprise TiO x Cl y and may be deposited by Atomic Layer Deposition at temperatures lower than 150°C.
摘要翻译：本发明涉及离子插入型电池的电极层和电极层材料，其中电极层材料具有良好的电子导电性和良好的离子导电性，并且其中电极层提供良好的倍率性能和高存储容量。本公开还涉及包括这样的电极层的离子插入型电池单元和电池，作为阳极。本公开还涉及用于形成这种电极层的方法以及用于制造离子插入型电池单元和电池的方法。根据本公开的电极层包含TiOxCly并且可以通过原子层沉积在低于150℃的温度下沉积。

7. 发明公开

EP2849210A1 Method for transfering a graphene layer 有权
标题翻译： Verfahren zurÜbertragungeiner Graphenschicht
公开(公告)号：EP2849210A1
公开(公告)日：2015-03-18
申请号：EP13184696.6
申请日：2013-09-17
申请人： IMEC VZW
发明人： Huyghebaert, Cedric , Vereecken, Philippe M. , Pourtois, Geoffrey
IPC分类号： H01L21/18
摘要： A method for transferring a graphene layer (1) from a metal substrate (2) to a second substrate (3) comprising:
a. Providing a graphene layer (1) on said metal substrate (2),
b. Adsorbing hydrogen atoms on said metal substrate (2) by passing protons through said graphene layer (1),
c. Treating said metal substrate (2) having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from said adsorbed hydrogen atoms, thereby detaching said graphene layer (1) from said metal substrate (2),
d. Transferring said graphene layer (1) to said second substrate (3), and
e. Optionally reusing said metal substrate (2) in a subsequent step a.
摘要翻译：一种用于将石墨烯层（1）从金属基板（2）转移到第二基板（3）的方法，包括：a。在所述金属基板（2）上设置石墨烯层（1），b。通过使质子通过所述石墨烯层（1）吸附所述金属基底（2）上的氢原子，c。处理其上具有吸附氢原子的所述金属基底（2），以便从所述吸附的氢原子形成氢气，从而将所述石墨烯层（1）从所述金属基底（2）分离，d。将所述石墨烯层（1）转移到所述第二衬底（3），以及e。任选地在随后的步骤a中重新使用所述金属基底（2）。

8. 发明授权

EP2011572B1 Method for forming catalyst nanoparticles for growing elongated nanostructures 有权
标题翻译：一种用于形成催化剂纳米粒子的方法用于生长纳米结构的细长
公开(公告)号：EP2011572B1
公开(公告)日：2012-12-05
申请号：EP07075889.1
申请日：2007-10-16
申请人： IMEC
发明人： Radisic, Aleksander , Vereecken, Philippe M.
IPC分类号： B01J35/00 , C01B31/02 , H01L21/768 , H01L51/00
CPC分类号： B01J35/0013 , B01J23/75 , B01J37/06 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , H01L21/76876 , H01L21/76879 , H01L51/0002 , H01L51/0048 , H01L2221/1094

9. 发明授权

EP2814091B1 Solid state battery with surface ion-diffusion enhancement coating and method for manufacturing thereof. 有权转让
公开(公告)号：EP2814091B1
公开(公告)日：2020-08-26
申请号：EP13171347.1
申请日：2013-06-11
申请人： IMEC VZW
发明人： Vereecken, Philippe M. , Huyghebaert, Cedric
IPC分类号： H01M4/04 , H01M10/0525 , H01M10/0562 , H01M10/0565

10. 发明授权

EP2849210B1 Method for transfering a graphene layer 有权
公开(公告)号：EP2849210B1
公开(公告)日：2020-07-08
申请号：EP13184696.6
申请日：2013-09-17
申请人： IMEC VZW
发明人： Huyghebaert, Cedric , Vereecken, Philippe M. , Pourtois, Geoffrey
IPC分类号： H01L21/02 , H01L21/18 , C25F5/00 , C01B32/194

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