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    • 1. 发明公开
    • Method for forming catalyst nanoparticles for growing elongated nanostructures
    • 用于形成催化剂纳米粒子以生长细长纳米结构的方法
    • EP2011572A3
    • 2009-05-20
    • EP07075889.1
    • 2007-10-16
    • Interuniversitair Microelektronica Centrum (IMEC)
    • Radisic, AleksanderVereecken, Philippe M.
    • B01J35/00C01B31/02H01L21/768H01L51/00
    • B01J35/0013B01J23/75B01J37/06B82Y10/00B82Y30/00B82Y40/00C01B32/162C01B32/18H01L21/76876H01L21/76879H01L51/0002H01L51/0048H01L2221/1094
    • The present invention provides a method for forming at least one catalyst nanoparticle (8) on at least one sidewall (10) of a three-dimensional structure on a main surface of a substrate (1a, 1 b), the main surface lying in a plane and the sidewall (10) of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate (1a, 1b). The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles (7) embedded in a non-catalytic matrix (5) and selectively removing at least part of the non-catalytic matrix (5) at the sidewalls (10) of the three-dimensional structure to thereby expose at least one catalyst nanoparticle (8). The present invention also provides a method for forming at least one elongated nanostructure (9), such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles (8) formed by the method according to embodiments of the invention as a catalyst. The methods according to embodiments of the invention may be used in, for example, semiconductor processing. The methods according to embodiments of the present invention are scalable and fully compatible with existing semiconductor processing technology.
    • 本发明提供了一种用于在衬底(1a,1b)的主表面上的三维结构的至少一个侧壁(10)上形成至少一个催化剂纳米颗粒(8)的方法,所述主表面位于 该平面和三维结构的侧壁(10)位于基本垂直于基底(1a,1b)的主表面的平面内。 该方法包括在主表面上获得三维结构,该三维结构包括嵌入非催化基质(5)中的催化剂纳米颗粒(7)并且选择性地去除至少部分非催化基质(5) 在三维结构的侧壁(10)处从而暴露至少一个催化剂纳米颗粒(8)。 本发明还提供了用于形成至少一个细长纳米结构(9)的方法,例如, 纳米线或碳纳米管,使用通过根据本发明的方法形成的催化剂纳米粒子(8)作为催化剂。 根据本发明的实施例的方法可以用于例如半导体处理。 根据本发明实施例的方法是可扩展的并且与现有的半导体处理技术完全兼容。
    • 2. 发明公开
    • Method for forming catalyst nanoparticles for growing elongated nanostructures
    • Verfahren zur Bildung von Katalysatornanopartikeln zurZüchtunglänglicherNanostrukturen
    • EP2011572A2
    • 2009-01-07
    • EP07075889.1
    • 2007-10-16
    • Interuniversitair Microelektronica Centrum (IMEC)
    • Radisic, AleksanderVereecken, Philippe M.
    • B01J35/00C01B31/02H01L21/768H01L51/00
    • B01J35/0013B01J23/75B01J37/06B82Y10/00B82Y30/00B82Y40/00C01B32/162C01B32/18H01L21/76876H01L21/76879H01L51/0002H01L51/0048H01L2221/1094
    • The present invention provides a method for forming at least one catalyst nanoparticle (8) on at least one sidewall (10) of a three-dimensional structure on a main surface of a substrate (1a, 1 b), the main surface lying in a plane and the sidewall (10) of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate (1a, 1b). The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles (7) embedded in a non-catalytic matrix (5) and selectively removing at least part of the non-catalytic matrix (5) at the sidewalls (10) of the three-dimensional structure to thereby expose at least one catalyst nanoparticle (8). The present invention also provides a method for forming at least one elongated nanostructure (9), such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles (8) formed by the method according to embodiments of the invention as a catalyst. The methods according to embodiments of the invention may be used in, for example, semiconductor processing. The methods according to embodiments of the present invention are scalable and fully compatible with existing semiconductor processing technology.
    • 本发明提供了一种在基板(1a,1b)的主表面上的三维结构的至少一个侧壁(10)上形成至少一个催化剂纳米颗粒(8)的方法,该主表面位于 平面和位于基本上垂直于基板(1a,1b)的主表面的平面的平面中的三维结构的侧壁(10)。 该方法包括在主表面上获得三维结构,所述三维结构包括嵌入非催化基质(5)中的催化剂纳米颗粒(7)并选择性地除去至少部分非催化基质(5) 在三维结构的侧壁(10)处,从而暴露至少一种催化剂纳米颗粒(8)。 本发明还提供了形成至少一个细长纳米结构(9)的方法,例如, 使用通过根据本发明的实施方案的方法形成的催化剂纳米颗粒(8)作为催化剂的纳米线或碳纳米管。 根据本发明的实施例的方法可以用于例如半导体处理。 根据本发明的实施例的方法是可扩展的并且与现有的半导体处理技术完全兼容。