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1. 发明公开

EP3680937A1 SOLID STATE IMAGING DEVICE 审中-实审
公开(公告)号：EP3680937A1
公开(公告)日：2020-07-15
申请号：EP18850934.3
申请日：2018-07-19
申请人： Hamamatsu Photonics K.K.
发明人： TAKAGI Shin-ichiro , MASE Mitsuhito , HIRAMITSU Jun , YONETA Yasuhito , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N5/372
摘要： The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

2. 发明授权

EP2851953B1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像摇篮
公开(公告)号：EP2851953B1
公开(公告)日：2016-11-16
申请号：EP13790820.8
申请日：2013-03-13
申请人： Hamamatsu Photonics K.K.
发明人： KOBAYASHI Hiroya , MURAMATSU Masaharu
IPC分类号： H01L27/14 , H01L31/0232 , H04N5/335 , H01L31/0216 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14621 , H01L27/14625 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2224/48091 , H01L2924/10158 , H01L2924/00014
摘要： A portion 41 on the light exit end surface 40b side of a fiber optic plate 40 includes a first portion 41a and a second portion 41b. The first portion 41a corresponds to a peripheral portion 23 of a semiconductor photodetecting element 20. The second portion 41b corresponds to a thin portion 25 of the semiconductor photodetecting element 20 and projects more toward the semiconductor photodetecting element 20 than the first portion 41a. A height of a step made between the first portion 41a and the second portion 41b of the fiber optic plate 40 is lower than a height of a step made between the thin portion 25 and the peripheral portion 23 of the semiconductor photodetecting element 20. The semiconductor photodetecting element 20 and the fiber optic plate 40 are fixed by a resin 45, in a state in which the first portion 41 a and the peripheral portion 23 are in contact and in which the second portion 41b and the thin portion 25 are separated.

3. 发明公开

EP3067934A1 LINEAR IMAGE SENSOR 有权
标题翻译：线性传感器
公开(公告)号：EP3067934A1
公开(公告)日：2016-09-14
申请号：EP14860704.7
申请日：2014-10-31
申请人： Hamamatsu Photonics K.K.
发明人： TAKAGI Shin-ichiro , YONETA Yasuhito , SUZUKI Hisanori , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N1/028 , H04N5/372
CPC分类号： H01L27/14825 , H01L27/14812 , H01L27/14843 , H04N5/3692 , H04N5/37213
摘要： An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.
摘要翻译：光学检测单元AR被分割成具有在列方向上对齐的多个像素区域PX。针对每个光学检测单元AR集成来自多个像素区域PX的信号，并且以与时间序列对应的一维光学图像的电信号的形式输出该信号。每个像素区域PX包括促进光电转换区域中的电荷转移的电阻栅极电极R和电荷累积区域S2。漏极区域ARD通过沟道区域与电荷累积区域S2相邻。

4. 发明公开

EP2975840A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：EP2975840A1
公开(公告)日：2016-01-20
申请号：EP14765033.7
申请日：2014-02-18
申请人： Hamamatsu Photonics K.K.
发明人： OTSUKA Shinya , SUZUKI Hisanori , MURAMATSU Masaharu
IPC分类号： H04N5/372 , H01L27/148 , H04N5/341
CPC分类号： H04N5/372 , H01L27/14812 , H04N5/37213 , H04N5/3725 , H04N5/378
摘要： A solid-state imaging device 1 includes photoelectric converting sections 11, 12, transfer sections 21, 22, first buffer sections 31, 32, second buffer sections 51, 52, first output sections 40, and second output sections 60. The photoelectric converting sections 11, 12 generate electric charges in response to incidence of light. The transfer sections 21, 22 transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections 31, 32 and the second buffer sections 51, 52 acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections 21, 22 and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections 40 and the second output sections 60 acquire the electric charges transferred from the first buffer sections 31, 32 and from the second buffer sections 51, 52, respectively, and output signals according to the acquired electric charges.
摘要翻译：固态成像装置1包括光电转换部分11,12，转印部分21,22，第一缓冲部分31,32，第二缓冲部分51,52，第一输出部分40和第二输出部分60.光电转换部分 11,12响应于光的入射而产生电荷。响应于三相或四相驱动信号，转印部分21,22将产生的电荷沿第一方向或与第二方向相反的第二方向转移。第一缓冲部分31,32和第二缓冲部分51,52分别获取由转移部分21,22在第一和第二方向上转移的电荷，并分别在第一和第二方向上转移所获取的电荷，以响应两相驱动信号。第一输出部分40和第二输出部分60分别获取从第一缓冲部分31,32和第二缓冲部分51,52传输的电荷，并且根据所获取的电荷输出信号。

5. 发明公开

EP2665098A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：EP2665098A1
公开(公告)日：2013-11-20
申请号：EP11855867.5
申请日：2011-11-11
申请人： Hamamatsu Photonics K.K.
发明人： IKEYA Tomohiro , YONETA Yasuhito , SUZUKI Hisanori , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N5/353 , H04N5/372
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译：固态成像装置1设置有具有光敏区域13的光电转换部分2和与光敏区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是基本上矩形的，由两个长边和两个短边。感光区域13在与长边交叉的第一方向上并置。电位梯度形成部分3具有第一电位梯度形成区域和第二电位梯度形成区域，第一电位梯度形成区域用于形成沿着从短边中的一个短边到另一短边的第二方向变低的电位梯度，以形成电位梯度沿第二方向变高。第二电位梯度形成区域在第二方向上与第一电位梯度形成区域相邻地布置。

6. 发明公开

EP2416362A1 SOLID IMAGING DEVICE 有权
标题翻译：固体成像装置
公开(公告)号：EP2416362A1
公开(公告)日：2012-02-08
申请号：EP10758533.3
申请日：2010-03-25
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H01L27/146 , H04N5/335
CPC分类号： H04N5/37206 , H01L27/14831 , H01L27/14856 , H01L27/14887 , H01L31/113 , H04N5/3592
摘要： In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16, to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V1 to V5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.
摘要翻译：在固态成像装置1中，溢出门（OFG）5具有预定电阻值，而电压施加单元16至165在连接部分171至175处电连接至OFG5。因此，当电压值通过电压施加单元161至165施加于连接部分171至175的V1至V5被调整，OFG5可以分别在其早期阶段部分和后期阶段部分产生更高和更低的电压值。结果，在早期和后期部分中势垒级（电势）变得越来越低，从而使得在光电转换单元2的前级侧区域中产生的所有电荷能够流出到溢出漏极（OFD）4，由此仅光电转换单元2的后级侧区域中产生的电荷可以被TDI传送。

7. 发明公开

EP2413362A1 BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：背照式固态图像拾取装置
公开(公告)号：EP2413362A1
公开(公告)日：2012-02-01
申请号：EP10756113.6
申请日：2010-03-24
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , MIYAZAKI Yasuhito , MURAMATSU Masaharu , YAMAMOTO Koei
IPC分类号： H01L27/148 , H01L27/14 , H04N5/335
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背面照射型的固体摄像装置中，具有在背面侧具有光入射面的半导体基板4，和在半导体基板4的相反侧的光检测面上配置的电荷传输电极2 光入射表面，光检测表面具有不平坦的表面。通过具有不平坦表面的光检测表面，由于由不平坦表面反射的光相对于入射光的相位具有散射相位差并且所产生的干涉光相互抵消，所以抑制了等离子体化。因此可以由背照式固态图像拾取装置获取高质量图像。

8. 发明公开

EP2393282A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：EP2393282A1
公开(公告)日：2011-12-07
申请号：EP10735746.9
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14806 , H01L29/76816
摘要： A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each or the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.
摘要翻译：根据一个实施例的固态成像装置是多端口固态成像装置，并且包括成像区域和多个单元。成像区域包括多个像素列。这些单元基于来自成像区域的电荷生成信号。每个或这些单元都有一个输出寄存器，多个乘法寄存器和一个放大器。输出寄存器从多个像素列中的一个或多个对应的像素列传输电荷。乘法寄存器并行提供，并从输出寄存器接收电荷以分别生成相乘的电荷。放大器根据倍增寄存器的倍增电荷产生一个信号。

9. 发明公开

EP2385696A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：EP2385696A1
公开(公告)日：2011-11-09
申请号：EP10735757.6
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.
摘要翻译：根据本发明的一个实施例的固态成像设备1是电荷倍增固态成像设备，并且包括：成像区域10，其根据入射光量产生电荷;输出寄存器单元20，其接收来自摄像区域10的电荷和倍增寄存器单元28，倍增寄存器单元28对来自输出寄存器20的电荷进行倍增，并且根据来自摄像区域10的电荷量来执行倍增寄存器单元28的倍增因子的前馈控制。

10. 发明授权

EP2385696B1 SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：EP2385696B1
公开(公告)日：2018-11-28
申请号：EP10735757.6
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/146 , H01L27/148 , H04N5/372
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.

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