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1. 发明授权

EP2385696B1 SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：EP2385696B1
公开(公告)日：2018-11-28
申请号：EP10735757.6
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/146 , H01L27/148 , H04N5/372
CPC分类号： H04N5/37213 , H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, and a multiplication register unit 28 that multiplies the charge from the output register 20, and performs feed-forward control of the multiplication factor of the multiplication register unit 28 according to the charge amount from the imaging area 10.

2. 发明授权

EP2413162B1 X-RAY IMAGING DEVICE 有权
公开(公告)号：EP2413162B1
公开(公告)日：2018-05-30
申请号：EP10755970.0
申请日：2010-03-18
申请人： Hamamatsu Photonics K.K.
发明人： TAKAGI Shin-ichiro , YONETA Yasuhito , SUZUKI Hisanori , MURAMATSU Masaharu , TSUNEMI Hiroshi , TSURU Takeshi , DOTANI Tadayasu , KOHMURA Takayoshi
IPC分类号： G01T1/24 , H01L27/14 , H01L31/09
CPC分类号： G01T1/244 , H01L27/14618 , H01L27/14623 , H01L27/14658 , H01L31/02164 , H01L31/115 , H01L2924/0002 , H01L2924/00
摘要： An X-ray imaging device 1 includes a back-illuminated solid-state image pickup element 10 including an X-ray detection section having a plurality of detection pixels arrayed for detecting incident X-rays formed on one surface 11 side, and an X-ray incident surface on the other surface 12, and a shielding layer 20 provided on the incident surface 12 of the image pickup element 10 and to be used for blocking light rays with wavelengths longer than the wavelength of X-rays as a detection target. The shielding layer 20 includes a first aluminum layer 21 provided directly on the incident surface 12, a second aluminum layer 22 provided on the first aluminum layer 21, and an ultraviolet light shielding layer 25 that is provided between the first and second aluminum layers 21 and 22 and is used for blocking ultraviolet light rays. Accordingly, an X-ray imaging device capable of suppressing the influence of detection of noise light in X-ray detection is realized.

3. 发明公开

EP2863436A1 MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE 有权
标题翻译：用于固态成像装置和固态成像装置的制造方法
公开(公告)号：EP2863436A1
公开(公告)日：2015-04-22
申请号：EP13804695.8
申请日：2013-02-21
申请人： Hamamatsu Photonics K.K.
发明人： YONETA Yasuhito , TAKISAWA Ryoto , ISHIHARA Shingo , SUZUKI Hisanori , MURAMATSU Masaharu
IPC分类号： H01L27/14
CPC分类号： H01L27/1469 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/148
摘要： A manufacturing method is provided for a solid-state imaging device which is easy to manufacture.
A method for manufacturing a solid-state imaging device 1 comprises a first step of preparing an imaging element 10 including a first principal surface S1 for receiving an energy line incident thereon, a second principal surface S2 opposing the first principal surface S1 and having an electrode 14 arranged thereon, and a photoelectric converter part 11 for photoelectrically converting the incident energy line so as to generate a signal charge; a second step of preparing a support substrate 20, provided with at least one through hole 23 extending in a thickness direction thereof, having principal surfaces S3, S4 opposing each other; a third step of aligning the imaging element 10 and the support substrate 20 with each other so that the one electrode 14 is exposed out of the one through hole 23 while the principal surfaces S2, S3 oppose each other and joining the imaging element 10 and the support substrate 20 to each other; and a fourth step of embedding a conductive member 30 in the through hole 23 after the third step.
摘要翻译：为易于制造的固态成像装置提供制造方法。用于制造固态成像装置1的方法包括：第一步骤，准备包括用于接收入射在其上的能量线的第一主表面S1，与第一主表面S1相对且具有电极的第二主表面S2的成像元件10 14和光电转换器部分11，用于光电转换入射能量线以产生信号电荷; 准备支撑基板20的第二步骤，该支撑基板20设置有沿其厚度方向延伸的至少一个通孔23，该通孔具有彼此相对的主表面S3，S4; 将摄像元件10和支承基板20对准，使得一个电极14露出到一个贯通孔23外的同时使主面S2，S3相对并将摄像元件10和摄像元件10接合的第3工序将衬底20彼此支撑; 以及在第三步骤之后将导电构件30嵌入通孔23中的第四步骤。

4. 发明公开

EP2851953A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译： FESTKÖRPERBILDAUFNAHMEVORRICHTUNG
公开(公告)号：EP2851953A1
公开(公告)日：2015-03-25
申请号：EP13790820.8
申请日：2013-03-13
申请人： Hamamatsu Photonics K.K.
发明人： KOBAYASHI Hiroya , MURAMATSU Masaharu
IPC分类号： H01L27/14 , H01L31/0232 , H04N5/335
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14621 , H01L27/14625 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2224/48091 , H01L2924/10158 , H01L2924/00014
摘要： A portion 41 on the light exit end surface 40b side of a fiber optic plate 40 includes a first portion 41a and a second portion 41b. The first portion 41a corresponds to a peripheral portion 23 of a semiconductor photodetecting element 20. The second portion 41b corresponds to a thin portion 25 of the semiconductor photodetecting element 20 and projects more toward the semiconductor photodetecting element 20 than the first portion 41a. A height of a step made between the first portion 41a and the second portion 41b of the fiber optic plate 40 is lower than a height of a step made between the thin portion 25 and the peripheral portion 23 of the semiconductor photodetecting element 20. The semiconductor photodetecting element 20 and the fiber optic plate 40 are fixed by a resin 45, in a state in which the first portion 41 a and the peripheral portion 23 are in contact and in which the second portion 41b and the thin portion 25 are separated.
摘要翻译：在光纤板40的光出射端面40b侧的部分41包括第一部分41a和第二部分41b。第一部分41a对应于半导体光电检测元件20的周边部分23.第二部分41b对应于半导体光电检测元件20的薄部分25，比第一部分41a向半导体光电检测元件20突出。在光纤板40的第一部分41a和第二部分41b之间形成的台阶的高度低于在半导体光电检测元件20的薄部分25和周边部分23之间形成的台阶的高度。半导体光检测元件20和光纤板40在第一部分41a和周边部分23接触并且第二部分41b和薄部分25分离的状态下由树脂45固定。

5. 发明公开

EP2755235A1 SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE 有权
标题翻译： FESTKÖRPERBILDAUFNAHMEELEMENT
公开(公告)号：EP2755235A1
公开(公告)日：2014-07-16
申请号：EP12830624.8
申请日：2012-06-19
申请人： Hamamatsu Photonics K.K.
发明人： IKEYA Tomohiro , FUKUI Toshiyuki , SUZUKI Hisanori , MURAMATSU Masaharu
IPC分类号： H01L27/14 , H01L27/146 , H04N5/369
CPC分类号： H01L27/14636 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14618 , H01L2224/02373 , H01L2224/02375 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05548 , H01L2224/05553 , H01L2224/05555 , H01L2224/0603 , H01L2224/06051 , H01L2224/06135 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/15151 , H01L2924/15192 , H01L2924/16195 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state image pickup element IS1 is provided with a semiconductor substrate 1 having a photosensitive region 3, a plurality of first electrode pads 10 arrayed on a principal face 1 a of the semiconductor substrate 1, a plurality of second electrode pads 12 arrayed in a direction along a direction in which the plurality of first electrode pads 10 are arrayed, on the principal face 1a of the semiconductor substrate 1, and a plurality of interconnections 14 connecting the plurality of first electrode pads 10 and the plurality of second electrode pads 12 in one-to-one correspondence. The plurality of interconnections 14 connect the first and second electrode pads so that each interconnection connects the first electrode pad 10 and the second electrode pad 12 in a positional relation of line symmetry with respect to a center line 1 perpendicular to the array directions of the plurality of first and second electrode pads 10, 12.
摘要翻译：固体摄像元件IS1设置有具有感光区域3的半导体衬底1，排列在半导体衬底1的主面1a上的多个第一电极焊盘10，排列在半导体衬底1的主面1a上的多个第二电极焊盘12 在半导体衬底1的主面1a上排列多个第一电极焊盘10的方向的方向以及连接多个第一电极焊盘10和多个第二电极焊盘12的多个互连14 以一一对应的方式。多个互连14连接第一和第二电极焊盘，使得每个互连以相对于垂直于多个阵列方向的中心线1的线对称的位置关系连接第一电极焊盘10和第二电极焊盘12 的第一和第二电极焊盘10,12。

6. 发明授权

EP2249390B1 SOLID-STATE IMAGING DEVICE 有权
公开(公告)号：EP2249390B1
公开(公告)日：2013-10-09
申请号：EP10735748.5
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L29/768 , H01L27/148 , H04N5/372 , H04N5/3725
CPC分类号： H04N5/37213 , H01L27/14806 , H01L27/14887 , H01L29/76816 , H04N5/3725
摘要： A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register. The valve gate electrode is an electrode for preventing a transfer of a charge between the output register and the corner register.

7. 发明授权

EP2264767B1 SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION 有权
标题翻译：用电子乘法函数坚硬的身体图像捕获设备
公开(公告)号：EP2264767B1
公开(公告)日：2013-07-10
申请号：EP10735833.5
申请日：2010-01-27
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N5/335 , H01L27/146
CPC分类号： H01L27/14609 , H01L27/14812 , H01L27/14818
摘要： A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 11A provided at an end portion of a starting side of the imaging region VR in an electron transfer direction. A specific vertical shift register (channel CH1) into which the electrons are injected by the electron injecting electrode 11A is disposed in a thick part of a semiconductor substrate, and is set in such a way as to be blocked from incident light.

8. 发明授权

EP2256811B1 SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION 有权
标题翻译：用电子乘法函数坚硬的身体图像捕获设备
公开(公告)号：EP2256811B1
公开(公告)日：2012-05-09
申请号：EP10735838.4
申请日：2010-01-27
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N5/335
CPC分类号： H01L27/1485 , H01L27/1464 , H01L27/14843 , H04N5/335 , H04N5/37213
摘要： A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.

9. 发明授权

EP2247099B1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态图像DEVICE
公开(公告)号：EP2247099B1
公开(公告)日：2012-03-21
申请号：EP10735747.7
申请日：2010-01-22
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L29/76816 , H01L27/14806 , H04N5/3653 , H04N5/37213 , H04N5/378
摘要： A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.

10. 发明公开

EP2256811A1 SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION 有权
标题翻译：含有电子倍增功能的固态图像传感装置
公开(公告)号：EP2256811A1
公开(公告)日：2010-12-01
申请号：EP10735838.4
申请日：2010-01-27
申请人： Hamamatsu Photonics K.K.
发明人： SUZUKI Hisanori , YONETA Yasuhito , TAKAGI Shin-ichiro , MAETA Kentaro , MURAMATSU Masaharu
IPC分类号： H01L27/148 , H04N5/335
CPC分类号： H01L27/1485 , H01L27/1464 , H01L27/14843 , H04N5/335 , H04N5/37213
摘要： A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.
摘要翻译：固态成像器件包括P型半导体衬底1A，在半导体衬底1A上生长的P型外延层1B，在外延层1B内生长的成像区域VR以及生长在半导体衬底1A内的N型半导体区域1C 外延层1B。固态成像装置还包括传输来自成像区VR的信号的水平移位寄存器HR和形成在外延层1B内的P型阱区1D。 N型半导体区域1C在阱区域1D内延伸。阱区1D中的P型杂质浓度高于外延层1B中的P型杂质浓度。在阱区1D中形成倍增来自水平移位寄存器HR的电子的倍增寄存器EM。

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