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    • 2. 发明公开
    • Gas sensor and method of producing the same
    • Gasfühlerund Verfahren zu dessen Herstellung。
    • EP0166408A2
    • 1986-01-02
    • EP85107784.2
    • 1985-06-24
    • HITACHI, LTD.Shinyei Kaisha
    • Sunano, NaomasaAsahi, NaotatsuYoshida, Toshio
    • G01N27/12
    • G01N27/12Y10T29/49002
    • In a gas sensor consisting of a pair of electrodes (3a, 3b) juxtaposed with each other on an electrically insulating substrate (1), a sensitive member film (4) interposed electrically between one end each of the electrodes (3a, 3b) and a protective film (5) covering a part on the sensitive member film (4) and on the other portions of the electrodes (3a, 3b), the present invention provides a gas sensor characterized in that the sensitive member film (4) consists of plasma- sprayed titanium oxide layer which has a diffusion reactive layer (8) between it and the substrate (1), and fine grooves are formed in the surface portion of the sensitive member film (4). The gas sensor is improved on the response and durability.
    • 在由电绝缘基板(1)上彼此并置的一对电极(3a,3b)构成的气体传感器中,电连接在电极(3a,3b)的一端和 本发明提供了一种气敏传感器,其特征在于,敏感部件薄膜(4)由以下部分组成:敏感部件薄膜(4)包括:敏感部件薄膜(4) 在其与基板(1)之间具有扩散反应层(8)的等离子体喷涂的氧化钛层,并且在敏感部件膜(4)的表面部分中形成微细的凹槽。 气体传感器的响应和耐久性得到改善。
    • 4. 发明公开
    • Gas sensor
    • 气体传感器
    • EP0101249A2
    • 1984-02-22
    • EP83304480.3
    • 1983-08-03
    • HITACHI, LTD.
    • Sunano, NaomasaAsahi, NaotatsuYoshida, Toshio
    • G01N27/12
    • G01N27/12
    • A gas sensor has a layer 3 of a sensitive material formed on an electrically insulating substrate 1 and electrodes 2,2' wherein the layer is formed of a p-type compound oxide semiconductor with a perovskite crystal structure. It is now proposed that the porous film consists of a uniform mixture containing said perovskite oxide semiconductor as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The gas sensor now exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. It is thus possible to effect measurements, detection and control with a high reliability.
    • 气体传感器具有形成在电绝缘基板1上的敏感材料层3和电极2,2',其中该层由具有钙钛矿晶体结构的p型复合氧化物半导体形成。 现在提出,多孔膜由包含所述钙钛矿氧化物半导体作为主要成分以及作为少量成分的钒,铌,钽和/或其化合物中的一种或多种的均匀混合物组成。 现在,气体传感器随着时间的推移发生小的变化,伴随着气体燃烧变化的拖尾效应减小。 因此可以高度可靠地进行测量,检测和控制。
    • 8. 发明公开
    • Method of manufacturing a gas sensor
    • 法赫伦·赫斯特伦
    • EP0070551A1
    • 1983-01-26
    • EP82106505.9
    • 1982-07-19
    • Hitachi, Ltd.
    • Sunano, NaomasaAsahi, Naotatsu
    • G01N27/56G01N27/12
    • G01N27/4073
    • Herein disclosed is a gas sensor which is constructed of an electrically insulating base (1), electrodes (2) formed on said base, and a gas sensitive film (3) formed on the surface of said base (1) at a portion where it detects the gas to be sensed, e.g. an oxygen gas. The gas sensitive film (3) is a thermal-sprayed film made of an oxide having a perovskite structure. The thermal-sprayed film has its surface formed with fine cracks to have its effective surface area increased so that the response is accelerated. Moreover, the thermal spraying process is so effected during the formation of the oxide film (3) that impurities which might adversely affect the reliability may be avoided from being mixed. The gas sensor may have said gas sensitive film (3) coated with a ceramic material (4) so that its performance may be further improved while protecting the gas sensitive film. Furthermore, it is also effective to add another sensor which uses the same electrically insulating base (1).
    • 这里公开了一种气体传感器,其由电绝缘基座(1),形成在所述基座上的电极(2)和形成在所述基座(1)的表面上的气体敏感膜(3)构成, 检测要感测的气体,例如 氧气。 气体敏感膜(3)是由具有钙钛矿结构的氧化物制成的热喷涂膜。 热喷涂膜的表面形成有细小的裂缝,使其有效的表面积增加,从而加速反应。 此外,在形成氧化膜(3)期间热喷涂方法如此受到可能避免混合可能对可靠性造成不利影响的杂质。 气体传感器可以具有涂覆有陶瓷材料(4)的所述气体敏感膜(3),从而可以进一步改善其性能,同时保护气敏元件。 此外,添加使用相同的电绝缘基底(1)的另一个传感器也是有效的。