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1. 发明公开

EP0101249A2 Gas sensor 失效
标题翻译：气体传感器
公开(公告)号：EP0101249A2
公开(公告)日：1984-02-22
申请号：EP83304480.3
申请日：1983-08-03
申请人： HITACHI, LTD.
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12
摘要： A gas sensor has a layer 3 of a sensitive material formed on an electrically insulating substrate 1 and electrodes 2,2' wherein the layer is formed of a p-type compound oxide semiconductor with a perovskite crystal structure. It is now proposed that the porous film consists of a uniform mixture containing said perovskite oxide semiconductor as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The gas sensor now exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. It is thus possible to effect measurements, detection and control with a high reliability.
摘要翻译：气体传感器具有形成在电绝缘基板1上的敏感材料层3和电极2,2'，其中该层由具有钙钛矿晶体结构的p型复合氧化物半导体形成。现在提出，多孔膜由包含所述钙钛矿氧化物半导体作为主要成分以及作为少量成分的钒，铌，钽和/或其化合物中的一种或多种的均匀混合物组成。现在，气体传感器随着时间的推移发生小的变化，伴随着气体燃烧变化的拖尾效应减小。因此可以高度可靠地进行测量，检测和控制。

2. 发明授权

EP0101249B1 Gas sensor 失效
公开(公告)号：EP0101249B1
公开(公告)日：1988-01-07
申请号：EP83304480.3
申请日：1983-08-03
申请人： HITACHI, LTD.
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12

3. 发明公开

EP0166408A3 Gas sensor and method of producing the same 失效
标题翻译：气体传感器及其制造方法
公开(公告)号：EP0166408A3
公开(公告)日：1986-10-22
申请号：EP85107784
申请日：1985-06-24
申请人： HITACHI, LTD. , Shinyei Kaisha
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12 , Y10T29/49002
摘要： In a gas sensor consisting of a pair of electrodes (3a, 3b) juxtaposed with each other on an electrically insulating substrate (1), a sensitive member film (4) interposed electrically between one end each of the electrodes (3a, 3b) and a protective film (5) covering a part on the sensitive member film (4) and on the other portions of the electrodes (3a, 3b), the present invention provides a gas sensor characterized in that the sensitive member film (4) consists of plasma- sprayed titanium oxide layer which has a diffusion reactive layer (8) between it and the substrate (1), and fine grooves are formed in the surface portion of the sensitive member film (4). The gas sensor is improved on the response and durability.

4. 发明授权

EP0166408B1 Gas sensor and method of producing the same 失效
标题翻译：气体传感器及其生产方法
公开(公告)号：EP0166408B1
公开(公告)日：1989-01-18
申请号：EP85107784.2
申请日：1985-06-24
申请人： HITACHI, LTD. , Shinyei Kaisha
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12 , Y10T29/49002

5. 发明公开

EP0166408A2 Gas sensor and method of producing the same 失效
标题翻译： Gasfühlerund Verfahren zu dessen Herstellung。
公开(公告)号：EP0166408A2
公开(公告)日：1986-01-02
申请号：EP85107784.2
申请日：1985-06-24
申请人： HITACHI, LTD. , Shinyei Kaisha
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12 , Y10T29/49002
摘要： In a gas sensor consisting of a pair of electrodes (3a, 3b) juxtaposed with each other on an electrically insulating substrate (1), a sensitive member film (4) interposed electrically between one end each of the electrodes (3a, 3b) and a protective film (5) covering a part on the sensitive member film (4) and on the other portions of the electrodes (3a, 3b), the present invention provides a gas sensor characterized in that the sensitive member film (4) consists of plasma- sprayed titanium oxide layer which has a diffusion reactive layer (8) between it and the substrate (1), and fine grooves are formed in the surface portion of the sensitive member film (4). The gas sensor is improved on the response and durability.
摘要翻译：在由电绝缘基板（1）上彼此并置的一对电极（3a，3b）构成的气体传感器中，电连接在电极（3a，3b）的一端和本发明提供了一种气敏传感器，其特征在于，敏感部件薄膜（4）由以下部分组成：敏感部件薄膜（4）包括：敏感部件薄膜（4）在其与基板（1）之间具有扩散反应层（8）的等离子体喷涂的氧化钛层，并且在敏感部件膜（4）的表面部分中形成微细的凹槽。气体传感器的响应和耐久性得到改善。

6. 发明公开

EP0101249A3 Gas sensor 失效
公开(公告)号：EP0101249A3
公开(公告)日：1984-09-12
申请号：EP83304480
申请日：1983-08-03
申请人： HITACHI, LTD.
发明人： Sunano, Naomasa , Asahi, Naotatsu , Yoshida, Toshio
IPC分类号： G01N27/12
CPC分类号： G01N27/12
摘要： A gas sensor has a layer 3 of a sensitive material formed on an electrically insulating substrate 1 and electrodes 2,2' wherein the layer is formed of a p-type compound oxide semiconductor with a perovskite crystal structure. It is now proposed that the porous film consists of a uniform mixture containing said perovskite oxide semiconductor as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The gas sensor now exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. It is thus possible to effect measurements, detection and control with a high reliability.

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