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1. 发明授权

EP2650407B1 PEROVSKITE MANGANESE OXIDE THIN FILM 有权
标题翻译： PEROVSKITE锰氧化物薄膜
公开(公告)号：EP2650407B1
公开(公告)日：2015-07-29
申请号：EP11847026.9
申请日：2011-11-28
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： C30B29/22 , C01G45/00 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L45/00 , H01L49/00
CPC分类号： H01F1/01 , C30B23/066 , C30B29/22 , G02B1/10 , H01F10/1933 , H01L43/10 , H01L45/04 , H01L45/147 , H01L45/1625
摘要： An object of the present invention is to elevate the transition temperature of a perovskite manganese oxide thin film above that of the bulk. One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1 and having an (m10) orientation (19 ‰¥ m ‰¥ 2).

2. 发明公开

EP2650408A1 PEROVSKITE MANGANESE OXIDE THIN FILM AND PRODUCTION METHOD FOR SAME 有权
标题翻译： PEROVSKITMANGANOXID-DÜNNFILMUND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2650408A1
公开(公告)日：2013-10-16
申请号：EP11847480.8
申请日：2011-11-28
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： C30B29/22 , C01G23/00 , C01G45/00 , C23C14/28 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12 , H01L45/00 , H01L49/00
CPC分类号： H01L43/10 , C23C14/08 , C23C14/28 , C30B23/066 , C30B29/22 , H01L43/12 , H01L45/04 , H01L45/147 , H01L45/1625 , Y10T428/1259 , Y10T428/265
摘要： An object of the present invention is to provide a perovskite manganese oxide thin film that (1) allows a first order phase transition and (2) has A-site ordering.
One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1, containing Ba and a rare earth element in the A sites, and having an (m10) orientation (m = 2n; 9 ≥ n ≥ 1).
摘要翻译：本发明的目的是提供（1）允许一阶相变和（2）具有A位点排列的钙钛矿氧化锰薄膜。本发明的一个方面提供一种形成在基板1上的钙钛矿锰氧化物薄膜2，其在A部位含有Ba和稀土元素，并且具有（m10）取向（m = 2n; 9‰¥n‰ 1）。

3. 发明公开

EP2650407A1 PEROVSKITE MANGANESE OXIDE THIN FILM 有权
标题翻译： PEROVSKITE锰氧化物薄膜
公开(公告)号：EP2650407A1
公开(公告)日：2013-10-16
申请号：EP11847026.9
申请日：2011-11-28
申请人： Fuji Electric Co. Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： C30B29/22 , C01G45/00 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L45/00 , H01L49/00
CPC分类号： H01F1/01 , C30B23/066 , C30B29/22 , G02B1/10 , H01F10/1933 , H01L43/10 , H01L45/04 , H01L45/147 , H01L45/1625
摘要： An object of the present invention is to elevate the transition temperature of a perovskite manganese oxide thin film above that of the bulk.
One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1 and having an (m10) orientation (19 ≥ m ≥ 2).
摘要翻译：本发明的一个目的是提高钙钛矿锰氧化物薄膜的转变温度高于体相的转变温度。本发明的一个方面提供形成在基板1上并且具有（m10）取向（19≥m≥2）的钙钛矿氧化锰薄膜2。

4. 发明授权

EP2650408B1 PEROVSKITE MANGANESE OXIDE THIN FILM AND PRODUCTION METHOD FOR SAME 有权
标题翻译：用于生产PEROVSKITMANGANOXID薄膜和过程
公开(公告)号：EP2650408B1
公开(公告)日：2015-10-14
申请号：EP11847480.8
申请日：2011-11-28
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： H01L45/00 , C23C14/08 , C23C14/24
CPC分类号： H01L43/10 , C23C14/08 , C23C14/28 , C30B23/066 , C30B29/22 , H01L43/12 , H01L45/04 , H01L45/147 , H01L45/1625 , Y10T428/1259 , Y10T428/265

5. 发明授权

EP2375464B1 MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME 失效转让
标题翻译：磁阻元件和存储设备
公开(公告)号：EP2375464B1
公开(公告)日：2014-09-10
申请号：EP09834596.0
申请日：2009-10-02
申请人： Fuji Electric Co., Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： G11C11/16 , H01F10/12 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/126 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/10 , H01L43/12

6. 发明公开

EP2461168A1 NON-CONTACT CURRENT SENSOR 审中-公开
标题翻译： KONTAKTFREIER STROMSENSOR
公开(公告)号：EP2461168A1
公开(公告)日：2012-06-06
申请号：EP10804161.7
申请日：2010-04-12
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： G01R15/20 , H01L43/08
CPC分类号： G01R15/205 , G01R15/148 , G01R33/093 , G01R33/098
摘要： According to the present invention, a spin valve structure (2), an electrical unit (4) that applies a current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2) are included, in which when a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, the electrical unit (4) allows magnetization directions of a pinned layer (12) and the free layer (14) to transit between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2), and the resistance reading unit (5) is configured to detect a threshold value of the current or the current-induced magnetic field corresponding to transition by reading out the resistance value corresponding to the transition between the parallel state and the anti-parallel state.
摘要翻译：根据本发明，自旋阀结构（2），向自旋阀结构（2）施加电流的电单元（4）以及电读取单元，其电读出自旋阀结构的电阻值（2），其中当检测到电流感应磁场时，自由层（14）的矫顽力被配置为大于作为检测对象的电流感应磁场，电气单元（4））通过将电流施加到自旋阀结构（2），允许被钉扎层（12）和自由层（14）的磁化方向在相互平行的状态和相互反平行状态之间转变，并且电阻读取单元（5）被配置为通过读出对应于并行状态和反并行状态之间的转变的电阻值来检测与转变相对应的电流或电流感应磁场的阈值。

7. 发明公开

EP2434540A1 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME 审中-公开
标题翻译： MAGNETISCHES SPEICHERELEMENT UND SPEICHERVORRICHTUNG DAMIT
公开(公告)号：EP2434540A1
公开(公告)日：2012-03-28
申请号：EP10777613.0
申请日：2010-03-17
申请人： Fuji Electric Co. Ltd.
发明人： YAMADA, Michiya , OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/303 , H01L43/08
摘要： Provided is a magnetic memory element capable of maintaining high thermal stability (retention characteristics) while reducing a writing current.
The magnetic memory element includes: a magnetic tunnel junction portion (13) having a first magnetic body (22) including a perpendicular magnetization film, an insulating layer (21), and a second magnetic body (20) serving as a storage layer including a perpendicular magnetization film which are sequentially stacked; and a thermal expansion layer (28) that is inserted into the magnetic tunnel junction portion (13). The second magnetic body (22) is deformed in a direction in which the cross section thereof increases by the thermal expansion of the thermal expansion layer (28) due to the flow of a current, thereby reducing a switching current threshold value required to change the magnetization direction.
摘要翻译：提供了一种能够在降低写入电流的同时保持高热稳定性（保持特性）的磁记忆元件。磁存储元件包括：磁性隧道结部分（13），具有包括垂直磁化膜的第一磁体（22），绝缘层（21）和用作存储层的第二磁性体（20）依次层叠的垂直磁化膜; 和插入磁性隧道结部分（13）中的热膨胀层（28）。第二磁性体（22）由于电流的流动而使热膨胀层（28）的热膨胀的横截面增大的方向变形，从而降低了改变所需的开关电流阈值磁化方向。

8. 发明公开

EP2385548A1 MAGNETIC MEMORY ELEMENT AND DRIVING METHOD THEREFOR 有权转让
标题翻译：波士顿大学的研究人员
公开(公告)号：EP2385548A1
公开(公告)日：2011-11-09
申请号：EP10793917.5
申请日：2010-05-14
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： H01L21/8246 , G11C11/15 , H01F10/14 , H01F10/32 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3286
摘要： This invention provides a magnetic memory element, and a method of driving such an element, which enable reduction of the current density during switching, without detracting from readout durability, retention characteristics, or other aspects of reliability. A magnetic memory element has a magnetic tunnel junction portion 20 with a spin-valve structure having a free layer 15 formed of a perpendicular magnetization film, a pinned layer 13 formed of a perpendicular magnetization film, and a nonmagnetic layer 14 sandwiched between the free layer 15 and the pinned layer 13, and records information by application of an electric pulse to the magnetic tunnel junction portion 20. An in-plane magnetization film 17, interposed in the path of the electric pulse, is disposed in the magnetic tunnel junction portion 20. The in-plane magnetization film 17 is configured so as to exhibit antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions depending on temperature changes based on application of the electric pulse to the magnetic tunnel junction portion 20. A method of driving a magnetic memory element has a step of providing, in the magnetic tunnel junction portion 20, an in-plane magnetization film 17 which exhibits antiferromagnetic (low-temperature)-ferromagnetic (high-temperature) phase transitions according to temperature; a step, during information record/erase, of applying an electric pulse of polarity suitable for information record/erase to the magnetic tunnel junction portion 20 via the in-plane magnetization film 17; and a step, during information readout, of applying an electric pulse of polarity suitable for information readout to the magnetic tunnel junction portion 20 via the in-plane magnetization film 17, to cause the temperature of the in-plane magnetization film 17 to be equal to or less than the transition temperature.
摘要翻译：本发明提供了一种磁存储元件和驱动这种元件的方法，其能够在切换期间降低电流密度，而不会降低读出耐久性，保留特性或可靠性的其它方面。磁存储元件具有具有自旋阀结构的磁性隧道结部分20，该自旋阀结构具有由垂直磁化膜形成的自由层15，由垂直磁化膜形成的钉扎层13和夹在自由层之间的非磁性层14 15和被钉扎层13，并且通过施加电脉冲将信息记录到磁性隧道结部分20上。插入在电脉冲路径中的面内磁化膜17设置在磁性隧道结部分20中平面内磁化膜17被配置为根据基于将电脉冲施加到磁性隧道结部分20的温度变化而呈现反铁磁（低温） - 铁磁（高温）相变。一种方法驱动磁存储元件的步骤具有在磁性隧道结部分20中提供表面抗磁化膜17的平面内磁化膜17的步骤，根据温度的铁磁（低温） - 铁磁（高温）相变; 在信息记录/擦除期间，经由面内磁化膜17将适合于信息记录/擦除的极性的电脉冲施加到磁性隧道结部分20的步骤; 以及在信息读出期间，经由面内磁化膜17将适合于信息读出的极性的电脉冲施加到磁性隧道结部20的步骤，以使平面内磁化膜17的温度相等达到或小于转变温度。

9. 发明授权

EP2722903B1 STRONGLY CORRELATED OXIDE FIELD EFFECT ELEMENT 有权
标题翻译：含强相关氧化物场效应COMPONENT
公开(公告)号：EP2722903B1
公开(公告)日：2016-01-06
申请号：EP12800072.6
申请日：2012-05-11
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： H01L49/00
CPC分类号： H01L29/517 , H01L29/78 , H01L29/7869 , H01L29/78696 , H01L49/003

10. 发明授权

EP2385548B1 MAGNETIC MEMORY ELEMENT AND DRIVING METHOD THEREFOR 有权转让
标题翻译：磁存储元件和操作之方法
公开(公告)号：EP2385548B1
公开(公告)日：2014-10-29
申请号：EP10793917.5
申请日：2010-05-14
申请人： Fuji Electric Co., Ltd.
发明人： OGIMOTO, Yasushi
IPC分类号： G11C11/16 , H01F10/32 , H01L43/08 , H01L27/22 , G01R33/09 , H01L43/10 , B82Y25/00
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3286

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