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1. 发明公开

EP0180457A3 Semiconductor integrated circuit device and method for producing same 失效
标题翻译：半导体集成电路装置及其制造方法
公开(公告)号：EP0180457A3
公开(公告)日：1989-06-07
申请号：EP85307819.4
申请日：1985-10-29
申请人： FUJITSU LIMITED
发明人： Ohshima, Toshio , Yokoyama, Naoki
IPC分类号： H01L21/76 , H01L29/205
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01L21/7605 , H01L21/8252 , H01L27/0605 , H01L29/205 , H01L29/7371 , H01L29/812
摘要： A compound semiconductor (e.g., GaAs) IC device comprising: a compound semiconductor substrate (1) having a semi-insulating compound surface region; an active element laminated layer (2 to 5) formed on the surface region; an isolation region of a semi-insulating (intrinsic) compound semiconductor (9) which is filled in a groove (7) extending into the surface region through the laminated layer (2 to 5); and active elements formed in the isolated regions (8) of the laminated layer (2 to 5), respectively.

2. 发明公开

EP0186301A1 High-speed semiconductor device 失效
标题翻译： Halbleiteranordnung mit grosser Geschwindigkeit。
公开(公告)号：EP0186301A1
公开(公告)日：1986-07-02
申请号：EP85308371.5
申请日：1985-11-18
申请人： FUJITSU LIMITED
发明人： Imamura, Kenichi , Yokoyama, Naoki , Ohshima, Toshio
IPC分类号： H01L29/72 , H01L29/36
CPC分类号： B82Y10/00 , H01L29/7606
摘要： A high-speed semiconductor device comprising an emitter potential barrier layer (2) disposed between an emitter layer (1) and a base layer (3), a collector layer (5), and a collector potential barrier layer (4a) disposed between the base layer (3) and the collector layer (5). The collector potential barrier layer (4a) has a structure having a barrier height changing from a high level to a low level along the direction from the base layer (3) to the collector layer (5), whereby, even when no bias voltage is applied between the collector layer (5) and the emitter layer (1), a collector current can flow through the device.
摘要翻译：一种高速半导体器件，包括设置在发射极层（1）和基极层（3）之间的发射极势垒层（2），集电极层（5）和集电极势垒层（4a）基底层（3）和集电体层（5）。集电极势垒层（4a）具有从基极层（3）到集电极层（5）的方向从高电平向低电位变化的结构，即使没有偏压为施加在集电极层（5）和发射极层（1）之间，集电极电流可流过该器件。

3. 发明公开

EP2192616A3 Quantum semiconductor device and method for fabricating the same 有权
标题翻译：量子半导体器件及其制造方法
公开(公告)号：EP2192616A3
公开(公告)日：2010-06-16
申请号：EP10155623.1
申请日：2003-05-20
申请人： FUJITSU LIMITED
发明人： Song, Hai-Zhi , Ohshima, Toshio
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , H01L21/02395 , H01L21/02546 , H01L21/02639 , H01L29/66439 , H01L29/7613 , Y10S438/962 , Y10S977/781 , Y10S977/782
摘要： A quantum semiconductor device comprising: a plurality of quantum dots formed over a semiconductor substrate; a semiconductor layer formed, burying the said plurality of quantum dots; and a plurality of electrodes formed in respective concavities formed in a surface of the semiconductor layer in respective positions above each of the quantum dots of the said plurality of quantum dots.

4. 发明授权

EP0130774B1 Process for fabricating bipolar transistor 失效
标题翻译：制造双极晶体管的工艺
公开(公告)号：EP0130774B1
公开(公告)日：1987-09-16
申请号：EP84304305.0
申请日：1984-06-26
申请人： FUJITSU LIMITED
发明人： Yokoyama, Naoki , Ohshima, Toshio
IPC分类号： H01L29/72 , H01L29/205 , H01L21/265
CPC分类号： H01L29/66318 , H01L29/205 , H01L29/72 , H01L29/7371

5. 发明授权

EP0180457B1 Semiconductor integrated circuit device and method for producing same 失效
标题翻译：半导体集成电路装置及其制造方法
公开(公告)号：EP0180457B1
公开(公告)日：1992-08-19
申请号：EP85307819.4
申请日：1985-10-29
申请人： FUJITSU LIMITED
发明人： Ohshima, Toshio , Yokoyama, Naoki
IPC分类号： H01L21/76 , H01L29/205
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01L21/7605 , H01L21/8252 , H01L27/0605 , H01L29/205 , H01L29/7371 , H01L29/812

6. 发明授权

EP0186301B1 High-speed semiconductor device 失效
标题翻译：高速半导体器件
公开(公告)号：EP0186301B1
公开(公告)日：1990-01-31
申请号：EP85308371.5
申请日：1985-11-18
申请人： FUJITSU LIMITED
发明人： Imamura, Kenichi , Yokoyama, Naoki , Ohshima, Toshio
IPC分类号： H01L29/72 , H01L29/36
CPC分类号： B82Y10/00 , H01L29/7606

7. 发明公开

EP0180457A2 Semiconductor integrated circuit device and method for producing same 失效
标题翻译：一种半导体器件，包括其制备方法的集成电路和方法。
公开(公告)号：EP0180457A2
公开(公告)日：1986-05-07
申请号：EP85307819.4
申请日：1985-10-29
申请人： FUJITSU LIMITED
发明人： Ohshima, Toshio , Yokoyama, Naoki
IPC分类号： H01L21/76 , H01L29/205
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01L21/7605 , H01L21/8252 , H01L27/0605 , H01L29/205 , H01L29/7371 , H01L29/812
摘要： A compound semiconductor (e.g., GaAs) IC device comprising: a compound semiconductor substrate (1) having a semi-insulating compound surface region; an active element laminated layer (2 to 5) formed on the surface region; an isolation region of a semi-insulating (intrinsic) compound semiconductor (9) which is filled in a groove (7) extending into the surface region through the laminated layer (2 to 5); and active elements formed in the isolated regions (8) of the laminated layer (2 to 5), respectively.

8. 发明授权

EP2192616B1 Quantum semiconductor device and method for fabricating the same 有权
标题翻译：量子半导体器件及其制造方法
公开(公告)号：EP2192616B1
公开(公告)日：2012-12-05
申请号：EP10155623.1
申请日：2003-05-20
申请人： FUJITSU LIMITED
发明人： Song, Hai-Zhi , Ohshima, Toshio
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , H01L21/02395 , H01L21/02546 , H01L21/02639 , H01L29/66439 , H01L29/7613 , Y10S438/962 , Y10S977/781 , Y10S977/782

9. 发明公开

EP2192616A2 Quantum semiconductor device and method for fabricating the same 有权
标题翻译：量子半导体器件及其制造方法
公开(公告)号：EP2192616A2
公开(公告)日：2010-06-02
申请号：EP10155623.1
申请日：2003-05-20
申请人： FUJITSU LIMITED
发明人： Song, Hai-Zhi , Ohshima, Toshio
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , H01L21/02395 , H01L21/02546 , H01L21/02639 , H01L29/66439 , H01L29/7613 , Y10S438/962 , Y10S977/781 , Y10S977/782
摘要： A quantum semiconductor device comprising: a plurality of quantum dots formed over a semiconductor substrate; a semiconductor layer formed, burying the said plurality of quantum dots; and a plurality of electrodes formed in respective concavities formed in a surface of the semiconductor layer in respective positions above each of the quantum dots of the said plurality of quantum dots.
摘要翻译：一种量子半导体器件，包括：在半导体衬底上形成的多个量子点; 形成埋入所述多个量子点的半导体层; 以及在所述多个量子点的每个量子点上方的相应位置中形成在各个凹陷中的多个电极，所述凹陷形成在所述半导体层的表面中。

10. 发明授权

EP0194197B1 Heterojunction bipolar transistor and process for fabricating same 失效
标题翻译：异相双极晶体管及其制造方法
公开(公告)号：EP0194197B1
公开(公告)日：1990-12-12
申请号：EP86400418.9
申请日：1986-02-27
申请人： FUJITSU LIMITED
发明人： Ohshima, Toshio
IPC分类号： H01L29/73
CPC分类号： H01L29/7371 , H01L29/42304

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