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    • 2. 发明公开
    • Semiconductor devices including lateral-type transistors
    • Halbleiteranordnungen mit Laltaltransistoren。
    • EP0100677A2
    • 1984-02-15
    • EP83304446.4
    • 1983-08-01
    • FUJITSU LIMITED
    • Isogai, HideakiOno, Chikai
    • H01L29/06
    • H01L29/402H01L21/76H01L21/761H01L27/1025H01L29/1008H01L29/735
    • A semiconductor device comprises at least one lateral-type PNP transistor (31) having a collector region (31c), an emitter region (31e), a base region (31b), and partially extended emitter wiring (37) covering the base region, to protect against channel leakage. The collector and emitter regions directly contact an isolation region (41), but the base region contacts the isolation region via a projection (42), preferably formed integrally with the isolation region. The partially extended emitter wiring may also extend over the projection, which possibility can serve to accommodate manufacturing tolerances that would otherwise reduce the degree of integration that could be achieved reliably.
    • 半导体器件包括具有集电极区域(31c),发射极区域(31e),基极区域(31b)和覆盖基极区域的部分延伸的发射极配线(37)的至少一个横向型PNP晶体管(31) 以防止通道泄漏。 集电极和发射极区域直接接触隔离区域(41),但是基极区域经由突起(42)接触隔离区域,优选地与隔离区域形成一体。 部分延伸的发射极布线还可以在突起上延伸,这可能性可以用于适应制造公差,否则可以降低可以可靠地实现的集成度。
    • 5. 发明公开
    • Decoder circuit
    • 解码器电路
    • EP0031681A2
    • 1981-07-08
    • EP80304586.3
    • 1980-12-18
    • FUJITSU LIMITED
    • Tanaka, MikiIsogai, Hideaki
    • G11C11/40
    • H03K17/62G11C11/415G11C11/416H03M7/005
    • A decoder circuit comprises:

      a differential amplifier circuit 41 which receives one or a plurality of line selection signals B which are to be decoded; switching circuits 31a-1, 31a-2, for switching predetermined line systems 50a, 51a in high or low level states according to the output signal B, B supplied from the differential amplifier circuit 41, and constant current supply circuits 21, 22 for supplying constant current to predetermined lines 13a, 14a of the above line systems 50a, 51a according to the signal supplied from the switching circuits 31a-1, 31a-2. The switching circuits 31a-1, 31a-2 are connected in parallel with respect to the constant current supply circuits 21, 22.
    • 解码器电路包括:差分放大器电路41,其接收要被解码的一个或多个行选择信号B; 用于根据从差分放大器电路41提供的输出信号B,B将预定线路系统50a,51a切换为高电平或低电平状态的开关电路31a-1,31a-2以及用于供应电流的恒定电流供应电路21,22 根据从开关电路31a-1,31a-2提供的信号将恒定电流提供给上述线路系统50a,51a的预定线路13a,14a。 开关电路31a-1,31a-2相对于恒流源电路21,22并联连接。
    • 6. 发明公开
    • Decoder circuit
    • 译码电路。
    • EP0024894A1
    • 1981-03-11
    • EP80302907.3
    • 1980-08-21
    • FUJITSU LIMITED
    • Isogai, Hideaki
    • H03K13/25G11C8/00
    • H03M7/005G11C8/10G11C11/415
    • A decoder circuit for a semiconductor memory device includes input terminal gates (G 00 -G 03 ) which receive address signal bits; first decoder lines (DL1) for decoding output signals of some of the inputterminal gates, and multi-emitter transistors (Ga-Gd, 0 7 ) each having emitter terminals connected to the first decoder lines and a collector terminal connected to a power source and to the base of a transistor (Ga-Gd,Q 7 ) which drives one of a plurality of groups of output terminal gates (G 10 -G 25 ), the multi-emitter transistors turning the driving transistor on or off depending upon the potential of the first decoder lines. Second decoder lines (DLll) are provided for decoding output signals from the remainder (G 02 ,G 03 ) of the input terminal gates. Further multi-emitter transistors (G 10 -G 25 ,Q 7 ) have their emitter terminals connected to the second decoder lines, and each has a collector terminal connected via a resistor to the emitter of the associated transistor (Ga-Gd,Q 7 ) for driving the group of output terminal gates and to the base of an output transistor (G io -G 25 ,Q 7 ), the multi-emitter transistors turning the output transistor on or off depending upon the potential of the second decoder lines and upon the emitter potential of the transistor (Ga-Gd,Q 7 ) which drives the group of the output terminal gates. Diode matrices can be used in place of multi-emitter transistors. In the present invention, constant current sources (I 1 ) are connected to the second decoder lines and emitter-follower transistors (Q 8 -Q 9 ) are inserted between the power source and the second decoder lines and are turned on or off by the output signals of the said remainder of the input terminal gates.