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1. 发明公开

EP0080415A3 Self-refreshing memory cell 失效
标题翻译：自我修复存储单元
公开(公告)号：EP0080415A3
公开(公告)日：1985-10-09
申请号：EP82402116
申请日：1982-11-22
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G11C11/34 , G11C17/00
CPC分类号： G11C14/00 , H01L27/11 , H01L27/1104 , H01L27/1112
摘要： A self-refreshing non-volatile memory cell having two cross-coupled transistors includes a first floating gate formed between the gate and the channel of said first transistor, said first floating gate overlying by means of a tunnel oxide a portion of the drain of said second transistor and a second floating gate formed between the gate and channel of said second transistor, a portion of said second floating gate overlying by tunnel oxide a portion of the drain of the first transistor. Disturbances in the supply voltage and the gate voltage of the device normally enhance rather than degrade the state of data stored in the cell, thereby providing an extremely long storage time for the cell. The cell is capable of operating simultaneously in a volatile and a non-volatile state.

2. 发明公开

EP0073713A3 Process for self-healing dielectrics 失效
标题翻译：自愈电路的工艺
公开(公告)号：EP0073713A3
公开(公告)日：1985-12-18
申请号：EP82401570
申请日：1982-08-24
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： H01L21/326 , H01L21/316 , H01L21/318 , H01L21/314
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/3105 , H01L21/3144 , H01L21/31662 , H01L21/3185 , H01L21/326
摘要： Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.

3. 发明公开

EP0108681A2 Bit erasable electrically erasable programmable read only memory 失效
标题翻译： Bit-löschbarerEEPROM。
公开(公告)号：EP0108681A2
公开(公告)日：1984-05-16
申请号：EP83402096.8
申请日：1983-10-27
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G11C17/00
CPC分类号： G11C16/14 , G11C16/0416 , G11C16/16
摘要： A bit erasable EEPROM is constructed which alleviates the problems of early termination of erasure and over-erasure. Rather than erasing the entire array at once, and thereby causing the problem of early termination of erasure and over-erasure, each cell is erased individually. In another embodiment of this invention, a group of one or more cells on a word line are erased at once with self-termination of the erase operation of each cell occurring when that cell's transistor becomes conductive, and at that time the erasure of only that cell ceases. The erasure of a particular cell ceases without effecting the erasure of operation of other cells. Therefore, the electrical erasure is self-limiting for each individual cell. In another embodiment of this invention, a group of one or more cells on a bit line are erased at once with no danger of under or over-erasure of each particular cell.
摘要翻译：构建了一种可擦除EEPROM，可以缓解早期的擦除和超出擦除的问题。而不是一次擦除整个阵列，从而导致早期的擦除和超擦除的问题，每个单元被单独擦除。在本发明的另一个实施例中，字线上的一个或多个单元的一组被同时擦除，当该单元的晶体管导通时，每个单元的擦除操作自身终止，并且在那时擦除仅该细胞停止特定单元的擦除停止而不影响其它单元的操作的擦除。因此，电擦除对于每个单独的单元是自限制的。在本发明的另一个实施例中，位线上的一个或多个单元的组一次被擦除，没有每个特定单元的不足或过度擦除的危险。

4. 发明公开

EP0108681A3 Bit erasable electrically erasable programmable read only memory 失效
标题翻译：可擦除可擦除可擦除可编程只读存储器
公开(公告)号：EP0108681A3
公开(公告)日：1986-10-15
申请号：EP83402096
申请日：1983-10-27
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G11C17/00
CPC分类号： G11C16/14 , G11C16/0416 , G11C16/16
摘要： A bit erasable EEPROM is constructed which alleviates the problems of early termination of erasure and over-erasure. Rather than erasing the entire array at once, and thereby causing the problem of early termination of erasure and over-erasure, each cell is erased individually. In another embodiment of this invention, a group of one or more cells on a word line are erased at once with self-termination of the erase operation of each cell occurring when that cell's transistor becomes conductive, and at that time the erasure of only that cell ceases. The erasure of a particular cell ceases without effecting the erasure of operation of other cells. Therefore, the electrical erasure is self-limiting for each individual cell. In another embodiment of this invention, a group of one or more cells on a bit line are erased at once with no danger of under or over-erasure of each particular cell.
摘要翻译：构建了一种可擦除EEPROM，可以缓解早期的擦除和超出擦除的问题。而不是一次擦除整个阵列，从而导致早期的擦除和超擦除的问题，每个单元被单独擦除。在本发明的另一个实施例中，字线上的一个或多个单元的一组被同时擦除，当该单元的晶体管导通时，每个单元的擦除操作自身终止，并且在那时擦除仅该细胞停止特定单元的擦除停止而不影响其它单元的操作的擦除。因此，电擦除对于每个单独的单元是自限制的。在本发明的另一个实施例中，位线上的一个或多个单元的组一次被擦除，没有每个特定单元的不足或过度擦除的危险。

5. 发明公开

EP0052566A3 Electrically erasable programmable read-only memory 失效
标题翻译：电可擦除可编程只读存储器
公开(公告)号：EP0052566A3
公开(公告)日：1985-05-15
申请号：EP81401794
申请日：1981-11-13
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G11C17/00
CPC分类号： G11C16/3486 , G11C8/12 , G11C16/0408 , G11C16/08 , G11C16/16 , G11C16/3459 , G11C16/3468 , G11C2216/28
摘要： An electrically erasable programmable read-only memory (E 2 PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E 2 PROM array consists of a single floating gate field effect transistor. The E 2 PROM of the present invention provides for row erasure and single bit writing.
摘要翻译：提供了一种电可擦除可编程只读存储器（E2PROM），其在写入期间利用施加到未选择字线的禁止电压以防止在未选择的行中写入。在优选实施例中，E2PROM阵列的每个存储单元由单个浮栅场效应晶体管组成。本发明的E2PROM提供行擦除和单位写入。

6. 发明公开

EP0074305A3 Fault isolating memory decoder 失效
标题翻译：故障隔离存储器解码器
公开(公告)号：EP0074305A3
公开(公告)日：1985-08-14
申请号：EP82401569
申请日：1982-08-24
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G06F11/20
CPC分类号： G11C29/789
摘要： Logic elements are added to a conventional decoder to allow one or more defective blocks of columns to be isolated and one or more redundant blocks of columns to be substituted. The redundant block of columns is programmed by non-volatile latches. A repair address is stored in the latches. When the decoded address to a block of columns is the same as the repair address, the redundant block of columns is selected and all other blocks of columns are de-selected. Normal column block addressing is unaffected when the decoded address is different from the repair address.
摘要翻译：将逻辑元件添加到常规解码器以允许一个或多个有缺陷的列的块被隔离并且一个或多个冗余的列的块被替换。列的冗余块由非易失性锁存器编程。修复地址存储在锁存器中。当解码的地址到列的块与修复地址相同时，选择列的冗余块，并且取消选择列的所有其他块。当解码的地址与修复地址不同时，正常的列块寻址不受影响。

7. 发明公开

EP0074305A2 Fault isolating memory decoder 失效
标题翻译： Fehlerisolierender Speicherdecodierer。
公开(公告)号：EP0074305A2
公开(公告)日：1983-03-16
申请号：EP82401569.7
申请日：1982-08-24
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G06F11/20
CPC分类号： G11C29/789
摘要： Logic elements are added to a conventional decoder to allow one or more defective blocks of columns to be isolated and one or more redundant blocks of columns to be substituted. The redundant block of columns is programmed by non-volatile latches. A repair address is stored in the latches. When the decoded address to a block of columns is the same as the repair address, the redundant block of columns is selected and all other blocks of columns are de-selected. Normal column block addressing is unaffected when the decoded address is different from the repair address.
摘要翻译：将逻辑元件添加到常规解码器以允许一个或多个有缺陷的列的块被隔离并且一个或多个冗余的列的块被替换。列的冗余块由非易失性锁存器编程。修复地址存储在锁存器中。当解码的地址到列的块与修复地址相同时，选择列的冗余块，并且取消选择列的所有其他块。当解码的地址与修复地址不同时，正常的列块寻址不受影响。

8. 发明公开

EP0052566A2 Electrically erasable programmable read-only memory 失效
标题翻译： Elektrischlöschbarer，程式师Festwertspeicher。
公开(公告)号：EP0052566A2
公开(公告)日：1982-05-26
申请号：EP81401794.3
申请日：1981-11-13
申请人： FAIRCHILD CAMERA & INSTRUMENT CORPORATION
发明人： Tickle, Andrew C.
IPC分类号： G11C17/00
CPC分类号： G11C16/3486 , G11C8/12 , G11C16/0408 , G11C16/08 , G11C16/16 , G11C16/3459 , G11C16/3468 , G11C2216/28
摘要： An electrically erasable programmable read-only memory (E 2 PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E 2 PROM array consists of a single floating gate field effect transistor. The E 2 PROM of the present invention provides for row erasure and single bit writing.
摘要翻译：提供了一种电可擦除可编程只读存储器（E2PROM），其在写入期间利用施加到未选择字线的禁止电压以防止在未选择的行中写入。在优选实施例中，E2PROM阵列的每个存储单元由单个浮栅场效应晶体管组成。本发明的E2PROM提供行擦除和单位写入。

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