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2. 发明公开

EP0160365A1 Method of making amorphous semiconductor alloys and devices using microwave energy 失效
标题翻译：一种用于通过微波能量的装置生产非晶半导体合金和设备的过程。
公开(公告)号：EP0160365A1
公开(公告)日：1985-11-06
申请号：EP85301575.8
申请日：1985-03-07
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： Ovshinshy, Stanford R. , Walter, Lee , Allred, David D. , Hudgens, Stephen J.
IPC分类号： H01L45/00 , H01L21/205 , C23C14/14 , C23C14/38
CPC分类号： H01J37/32 , C23C16/511 , H01J37/3222 , H01J37/32275 , H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L29/161 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A low pressure process for making amorphous semiconductor alloy films (22) and devices at high deposition rates and high gas conversion efficiencies utilizes microwave energy to form a deposition plasma. The alloys exhibit high-quality electronic properties suitable for many applications including photovoltaic and electrophotographic applications. The microwave energy and reaction gases form a glow discharge plasma within a reaction vessel (12) to deposit an amorphous semiconductor film (22) from the reaction gases into a substrate (14). The reaction gases can include silane (SiH 4 ), silicon tetrafluoride (SiF 4 ), silane and silicon tetrafluoride, silane and germane (GeH 4 ), silicon tetrafluoride and germane, germane or germanium tetrafluoride (GeF 4 ). Hydrogen (H 2 ) can also be added to the reaction gases. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for example, methane or ammoniagas to widen the band gap of the deposited alloys.
摘要翻译：用于以高沉积速率和高的气体转换效率制造非晶半导体合金膜（22）和设备A低压工艺利用微波能量以形成等离子体沉积。该合金表现出适用于许多应用，包括光生伏打和电子照相应用的高品质的电子性质。微波能量和反应气体形成反应容器（12）内的辉光放电等离子体对从反应气体非晶半导体电影（22）沉积到基板（14）。该反应气体可以包括硅烷（SiH 4），四氟化硅（四氟化硅），硅烷和四氟化硅，硅烷和锗烷（GeH 4），四氟化硅和锗，锗或四氟化锗（GeF4）。因此氢气（H 2）可被加入到反应气体。掺杂剂是p型或n型，因此可以加入到反应气体以形成p型或n型的合金膜，分别。所以，带隙增加元件：如碳或氮可以以的形式加入，例如，甲烷或ammoniagas加宽沉积合金的带隙。

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